XL SOT23 Search Results

XL1225 transistor

Abstract: XL1225
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

XL1225 transistor

Abstract: XL1225L XL1225 XL1225 TO-92 MARKING Scr SOT23 ML1225 xl1225 scr
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

Contextual Info: UNISONICTECHNOLOGIESCO.,LTD. XL/ML1225 SCR M EDI U M POWER LOW V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

XL1225

Abstract: XL1225 equivalent SCR PNPN XL1225 TO-92 ML1225 scr SOT-23
Contextual Info: UTC XL/ML1225 SCR SCRs DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 3 1 2 SOT-23 1: GATE 2: ANODE 3: CATHODE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

Contextual Info: Silicon Schottky Diodes 32E D • 'T - O xl~ Ó rJ q a j -j7 A23b3SG GQlbS2b b « S I P SIEMENS/ SP C L t SEMICONDS • For mixer applications in the VHF/UHF range • For high-speed switching / ,- -, / ESD: Electrostatic discharge sensitive device, observe handling precautions!

sot-23 pinout

Abstract: PMBT3903 bc818 bcp56 sot 23 1a BC818-16 BC818-25 BC818-40 BC848A BC848B
Contextual Info: 58 N AMER PHILIPS/DISCRETE Surface Mount Devices 2SE D • V-Xl-Ol ^ 5 3 ^ 3 1 Q01bE3b T ■ GENERAL PURPOSE TRANSISTORS, NPN : RATINGS TY PE PACKAG E VcEO V VcBQ V mA . - - hFE VCE sat mìnVmax. at Iq /Vc E . mA/V V max. at Iq /Ib mA/mA PINOUT SEE SECTION

TL201212-4R7K

Abstract: pr4401 l0806 2N3904 A45 VRA6 C1152 VCC317 prestonia GEVENT12 quanta
Contextual Info: A B C D E 4 4 X-BUS FLASH USB Prestonia Prestonia CPU CPU BMC CPU BUS SP SIO 417 PP LPC BUS MEMORY I/F CSB5 3 CMIC_SL Thin IMB FLPY 3 IMB IDE PCI Slot 33MHz/32bit 4 DIMMs PCI BUS 0 BCM5702 Gigabit Ethernet RAGE XL Secondary 2 PCI BUS 1 PCI X Slot 100MHz/64bit

BC8508

Contextual Info: 12E 0 § b3b?aSM 0005005 3 I T-Xl-Ot M A X IM U M R AT IN G S Symbol BC850 BC849 Unit Collector-Emitter Voftage VCEO 45 30 V Collector-Base Voltage VcBO 50 30 V Emitter-Base Voltage Ve b o 6.0 5.0 V >C 100 100 mAdc Rating Collector Current — Continuous MOTOROLA SC

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

MAX2606

Abstract: Equivalent maxim MAX2606 MAX2605 MAX2605EUT-T MAX2606EUT-T MAX2607 MAX2607EUT-T MAX2608 MAX2608EUT-T MAX2609
Contextual Info: 19-1673; Rev 0a; 4/02 L MANUA ION KIT T A U L EVA BLE AVAILA 45MHz to 650MHz, Integrated IF VCOs with Differential Output Features The MAX2605–MAX2609 are compact, high-performance intermediate-frequency IF voltage-controlled oscillators (VCOs) designed specifically for demanding portable

Contextual Info: EVALUATION KIT AVAILABLE MAX2605–MAX2609 45MHz to 650MHz, Integrated IF VCOs with Differential Output LE AVAILAB General Description Features The MAX2605–MAX2609 are compact, high-performance intermediate-frequency IF voltage-controlled oscillators (VCOs) designed specifically for demanding portable

MAX2605

Abstract: MAX2606EUT-T IC vco 900 1800 mhz MAX2608EUT-T MAX2605EUT-T MAX2606 MAX2607 MAX2607EUT-T MAX2608 MAX2609
Contextual Info: 19-1673; Rev 0; 9/00 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 45MHz to 650MHz, Integrated IF VCOs with Differential Output Features The MAX2605–MAX2609 are compact, high-performance intermediate-frequency IF voltage-controlled oscillators (VCOs) designed specifically for demanding portable

MAX2605

Abstract: IC vco 900 1800 mhz MAX2606 MAX2605EUT-T MAX2606EUT-T MAX2607 MAX2607EUT-T MAX2608 MAX2608EUT-T MAX2609
Contextual Info: 19-1673; Rev 0; 9/00 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 45MHz to 650MHz, Integrated IF VCOs with Differential Output Features The MAX2605–MAX2609 are compact, high-performance intermediate-frequency IF voltage-controlled oscillators (VCOs) designed specifically for demanding portable

mmbd914

Contextual Info: SENSITRON_ SEMICONDUCTOR _ MMBD914 SURFACE MOUNT FAST SWITCHING DIODE Data Sheet 2764 Rev.— Features • • • • • High Conductance Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching

Contextual Info: Micnosemi mt Chatsworth, CA m P ro g fc s s P o w c rp d Dy I c c hn otoq y 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 300mW 70Volt

Contextual Info: • ■■ Micnosemi Chatsworth, CA M Progress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • Low Forward Voltage Surface Mount SOT-23 Package Capable of 230mW atts of Power Dissipation

Contextual Info: SIEMENS Silicon PIN Diode BAR 17 • RF switch • RF attenuator for frequencies above 1 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 17 L6 Q62702-A858 Pin Configuration

LM3874-Adj

Abstract: LM3671 operational amplifier discrete schematic SCANSTA111 LP2985 LM2671 lm3485 LP3874-ADJ LM3874 SPARTAN-3 XC3S400
Contextual Info: Analog Design Guide for Xilinx FPGAs Power Expert . 2 Power Management Solution for FPGAs . 3-19 High-Speed Interface Solution for FPGAs . 20-21 JTAG for FPGAs . 22-23 High-speed ADCs for FPGAs . 24-25

Contextual Info: SIEMENS Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch • RF attenuator for frequencies above 10 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772

BAS40

Contextual Info: BAS40/ -04/ -05/ -06 VISHAY SURFACE MOUNT SCHO TTKY BARRIER DIODES /Li T E M I ri / POWERSEMICONDUCTOR I Features Low Turn-on Voltage Fast switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50

1000w audio amplifier circuit diagram class D

Abstract: 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D
Contextual Info: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

1000w subwoofer amplifier PCB layout

Abstract: IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram
Contextual Info: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of

SLVA157

Abstract: TPS62200 TPS62204
Contextual Info: Application Report SLVA157 – February 2004 Choosing Inductors and Capacitors for DC/DC Converters Christophe Vaucourt ABSTRACT Wireless handsets, PDAs, and other portable electronic devices continue to shrink while increasing in complexity. As a result, engineers face design challenges with battery life,