XX20H Search Results

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

Contextual Info: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc

Contextual Info: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp

Contextual Info: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C

Contextual Info: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms

M3062

Abstract: TA2140 csc 2313 m3062lfgpgp u3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

LTS 543 seven segment display

Abstract: seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration
Contextual Info: TMS320C5x User’s Guide Literature Number: SPRU056D June 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

le28f1101t-40

Abstract: xx20H 65536words16bits
Contextual Info: Preliminary Specifications CMOS LSI LE28F1101T-40/45/55/70 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time: 40ns/45ns/55ns/70ns Low Power Consumption

bose 6201

Abstract: Allen Bradley Power Supply schematic diagram allen bradley RCR20 voice control robot tms320 54x mcbsp tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 TMS320 application manual spru288 JTAG MINI LT 542 seven segment display data sheet
Contextual Info: TMS320C54x DSP Reference Set Volume 1: CPU and Peripherals Literature Number: SPRU131F April 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

DT28F016SA

Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
Contextual Info: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate

an1171

Abstract: sharc ADSP-21xxx ADDRESSING MODES CHN 950 ADSP-21062 ADSP21535 ADSP-21535 ADSP-2188M ADSP-2191 ADSP-TS101S DSM2150F5V
Contextual Info: DSM2150F5V DSM Digital Signal Processor System Memory For Analog Devices DSPs (3.3V Supply) FEATURES SUMMARY • Glueless Connection to DSP – Create state machines, chip selects, simple shifters and counters, clock dividers, delays – Easily add memory, logic, and I/O to the External Port of ADSP-218x, 219x, 2106x,

Contextual Info: CAT28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

INTEL ES

Abstract: XX96H 297372
Contextual Info: int ! ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz - Synchronous Pipelined Reads • Backwards-Compatible with 28F008SA Command-Set . 2 pA Typica| Deep Power.Down

xx40h

Abstract: nb2b
Contextual Info: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

26C1024

Contextual Info: M S IC M X26 C 10 24A 1 M-BIT 6 4 K x 1 6 CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% p rog ram/e rase voltage Fast access time: 70/90/100/120 ns

MX28F2100B

Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

PC14

Abstract: 2ah 2037 philips ak 141-15
Contextual Info: REJ09B0126-0101Z M16C/6N Group 16 M16C/6NL, M16C/6NN Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01

28F640J5

Abstract: iMC016FLSG 29062
Contextual Info: E PRODUCT PREVIEW VALUE SERIES 200 FLASH MEMORY CARD 8 – 64 MEGABYTES iMC008FLSG, iMC016FLSG, iMC024FLSG iMC032FLSG, iMC048FLSG, iMC064FLSG n n n n n n n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Technology High-Performance Writes  12 µs Typical Byte Write

2481D

Abstract: AT49BN6416T AT49BN6416 AT49BV6416 AT49BV6416T 78910
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz

28F320J5

Abstract: 28F640J5 intel DOC N15H
Contextual Info: E PRODUCT PREVIEW SERIES 200 FLASH MEMORY MINIATURE CARD 4, 8, 16 MBYTES iFM004G, iFM008G and iFM016G n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Flash Technology n n n n n Fast Read Performance  150 ns Max Access Time High-Performance Writes

TRANSISTOR BJ 131

Abstract: PC14 p088
Contextual Info: REJ09B0124-0101Z M16C/6N Group 16 M16C/6NK, M16C/6NM Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01

MX28F2100T

Abstract: MX28F2100TTC90
Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

M28F102

Abstract: PLCC44
Contextual Info: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES