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    XXXXXXM Datasheets Context Search

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    82801DB

    Abstract: E8870DH intel 4002 W32 MARKING 82802AC 82870P2 E8870 E8870IO E8870SP P64H2
    Text: Intel E8870IO Server I/O Hub SIOH Datasheet Product Features • ■ ■ ■ ■ ■ ■ Scalability Port (SP): — Two SPs with 3.2 GB/s peak bandwidth per direction per SP. — Bi-directional SPs for a total bandwidth of 12.8 GB/s. Four Hub Interface 2.0 Ports:


    Original     		PDF E8870IO 82870P2 64-bit P64H2) 16-bit, 82801DB. 128-byte 82801DB E8870DH intel 4002 W32 MARKING 82802AC E8870 E8870SP P64H2

    OAOLP2

    Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
    Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.


    Original     		PDF 15consecutive OAOLP2 temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645

    SASI

    Abstract: cmps a13 grd 07 z32106 Z32100 IRR28 we32100
    Text: Zilog P roduct S pecification January 1987 / O D ^ O ^ Z32106 M A U M A T H A C C E L E R A T IO N U N IT DESCRIPTION T he Z32106 M ath A cceleration U nit M AU provides floating-point capability fo r the Z32100 M icroprocessor and is fully com patible with


    OCR Scan     		PDF Z32106 Z32100 32bit) 64-bit) 80-bit) 32-bit 125-pin SASI cmps a13 grd 07 IRR28 we32100

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current


    OCR Scan     		PDF 32-Pin 28F010

    diode E1110

    Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
    Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t


    OCR Scan     		PDF

    80486DX2 microprocessor

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y a Am486 DX2 3.3-Volt Processor High-Performance, Clock-Doubled, 32-Bit Microprocessor Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Complete 32-Bit Architecture ■ Operating voltage range 3.3 V ± 0.3 V — Address and data buses


    OCR Scan     		PDF Am486Â 32-Bit 66-MHz 80-MHz 16734C Am386, Am486 Am486DX2 80486DX2 microprocessor

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet August 1996 mi c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations • Four 10 Mbits/s Ethernet transceivers and MACs integrated together with separate transmit and receive port FIFOs and a single DMA interface simplity the design of a frame-switching hub. Each


    OCR Scan     		PDF ATT1MX10 208-Pin ATT1MX10-SC

    HM534253BT

    Abstract: HM534
    Text: ADE-203-204B Z HM534253B Series 262,144-word x 4-bit Multiport CMOS Video RAM Rev. 2.0 Dec. 8, 1994 HITACHI The HM534253B is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4-bit SAM (serial access memory). Its R A M and SA M operate


    OCR Scan     		PDF ADE-203-204B HM534253B 144-word 256-kword 512-word 256-word HM534253BT HM534

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCM67H618B/D SEMICONDUCTOR TECHNICAL DATA MCM67H618B Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67H618B is a 1,179,648 bit synchronous fast static random access


    OCR Scan     		PDF MCM67H618B/D MCM67H618B i486TM 1ATX35398-0

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The ,uPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 36-BIT uPD431536L 768-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT jU P D 4 3 1 5 3 2 L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 31532L 32K-WORD 32-BIT uPD431532L 768-word 32-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /XPD 431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The ,uPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan     		PDF 32K-WORD 32-BIT uPD431532L 768-word 32-bit S100GF-65-8ET PD431532L. PD431532LGF

    Untitled

    Abstract: No abstract text available
    Text: AT&T Data Sheet October 1995 Microelectronics Optimized Reconfigurable Cell Array ORCA 2C Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 |im technology (four-input look-up table delay less than 3.6 ns)


    OCR Scan     		PDF ATT2C04, ATT2C06, ATT2C08, ATT2C10, ATT2C12, ATT2C15, ATT2C26, ATT2C40. DS95-183FPGA DS95-031

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet September 1995 = m A TsJ Microelectronics DSP1616-x30 Digital Signal Processor 1 Features 2 Description • Optimized for digital cellular applications with a bit manipulation unit for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times


    OCR Scan     		PDF DSP1616-x30 100-Pin 005002b

    Untitled

    Abstract: No abstract text available
    Text: IIIIIC • f f f / R T F IL Y S T S E M I C O N D U C T O R C A T 3 3 C 104/ C A T 33 C 104I 4K-Bit SERIAL E2PROM FEATURES ■ Low Power CMOS Technology Power-Up Inadvertant Write Protection ■ Single 3V Supply 100,000 Program/Erase Cycles ■ 256 x 16 or 512 x 8 Selectable Serial Memory


    OCR Scan     		PDF CAT33C104/CAT33C104I CAT33C104 CAT33C104I 512x8

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


    OCR Scan     		PDF 38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions

    MCM62486

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62486A 32K x 9 Bit BurstRAM Synchronous Static RAM With Burst Counter and Self-Timed Write The MCM62486A is a 294,912 bit synchronous sialic random access memory designed to provide a burstable, high-performance, secondary cache for the


    OCR Scan     		PDF MCM62486A MCM62486A 2486A MCM62486AFN14 MCM62466AFN19 MCM62486FN24 MCM62486

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM4216C258/L/F, KM4216V258/I-/F 256K 16 Bit CM OS Video RAM x FEATURES GENERAL DESCRIPTION Dual port Architecture 2S6K x 16 bits RAM port 512 x 16 bits SAM port Performance range: _ t-• —_ _ Speed Parameter — -RAM access tim e tRAC


    OCR Scan     		PDF KM4216C258/L/F, KM4216V258/I-/F KM4216C/V258 KM4216V258/L/F 20MAX 65TYP

    74HC165

    Abstract: 74HC165 truth table
    Text: Æ T SGS-THOMSON M54HC165 M74HC165 *7# H0»[i[LI glíl i]0 Í 8-BIT PISO SHIFT REGISTER * HIGH SPEED tpD = 21 ns (TYP. at VCc = 5V • LOW POWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n i H = V n il = 28% Vcc (MIN.) 1 1 B1N


    OCR Scan     		PDF M54HC165 M74HC165 54/74LS165 M74HC165 M54/74HC165 54/74HC165 74HC165 74HC165 truth table

    circuit diagram of MOD 100 counter using ic 7490

    Abstract: RSC14 plcf circuit diagram of MOD 8 counter using ic 7490 R14C11
    Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input


    OCR Scan     		PDF DS99-087FPGA DS98-163FPGA-01) circuit diagram of MOD 100 counter using ic 7490 RSC14 plcf circuit diagram of MOD 8 counter using ic 7490 R14C11

    TFC 718 S

    Abstract: kss 213 c sony sony KSS 213 b sony KSS 123 sony KSS 121
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by: DSP56007/D DSP56007 SYMPHONY AUDIO DSP FAMILY 24-BIT DIGITAL SIGNAL PROCESSORS Motorola designed the Symphony™ family of high-performance, programm able Digital Signal Processors DSPs to support a variety of digital audio applications, including Dolby ProLogic,


    OCR Scan     		PDF DSP56007/D DSP56007 24-BIT DSP56007 dat56007FJ88 DSPE56007FJ50 DSPE56007FJ66 DSPE56007FJ88 DSPB56007 TFC 718 S kss 213 c sony sony KSS 213 b sony KSS 123 sony KSS 121

    UPD482445GW-70

    Abstract: UPD482445
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D es crip tio n The ,uPD482444 and ,uPD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock


    OCR Scan     		PDF uPD482444 uPD482445 256K-WORD 16-BIT UPD482445GW-70

    NEC uPD 688

    Abstract: UPD4217400LG3-A60
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The


    OCR Scan     		PDF uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L /PD42S16400L, 4216400L, 42S17400L, 4217400L 42S17400L NEC uPD 688 UPD4217400LG3-A60

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 2 1 8 0 5 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /iPD421805 is a 131,072 words by 8 bits CMOS dynamic RAM with optional hyper page mode (EDO).


    OCR Scan     		PDF 128K-WORD uPD421805 PD421805 28-pin D421805-25-A /jPD421805-30-A PD421805-25 PD421805-30 PD421805-35