YE MARKING SOT23 Search Results

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: K77 diode Vishay DaTE CODE BAT750 BAT750-GS08 BAT750-GS18 vishay ED
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

Contextual Info: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Product Features Equivalent Circuit ◇ Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ◇ The bias resistors consist of thin -film resistors with

Contextual Info: DTA114 YM/YE/YUA/YCA/YSA PNP Digital Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor The bias resistors consist of thin -film resistors with complete isolation to allow negative biasing of

Contextual Info: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

Contextual Info: DTC114 YCA/YSA/YE/YUA NPN Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

TRANSISTOR DTA114

Abstract: YE MARKING SOT23 DTA114 323 marking 54 marking 54 sot23 completel B12 IC marking code DTA114 to92s
Contextual Info: DTA114 YM/YE/YUA/YCA/YSA PNP Digital Transistor Small Signal Diode Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor The bias resistors consist of thin -film resistors with complete isolation to allow negative biasing of

marking 64

Abstract: DTC114
Contextual Info: DTC114 YCA/YSA/YE/YUA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

transistor package SOT-723

Abstract: dta123
Contextual Info: DTA123 YM/YE/YUA/YCA/YSA PNP Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

TRANSISTOR SOT-23 marking JE

Abstract: sot-23 npn marking code 162 marking 62
Contextual Info: DTC123 YE/YUA/YCA/YSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

Contextual Info: DTC123 YE/YUA/YCA/YSA NPN Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

Contextual Info: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction   350mW Power Dissipation   Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

Contextual Info: BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction • • 350mW Power Dissipation • • Zener Voltages from 2.4V - 51V Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

IRF micro3

Abstract: IRLML9301TRPBF
Contextual Info: PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

IRLML6346

Abstract: IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020
Contextual Info: PD - 96278B IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features

Contextual Info: PD- 93757A IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.045Ω S Description These N-Channel MOSFETs from International Rectifier

Contextual Info: PD- 93757 IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.045Ω S Description These N-Channel MOSFETs from International Rectifier

Contextual Info: PD - 96278B IRLML0030TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features

IRLML6346

Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
Contextual Info: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

mosfet ir 840

Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
Contextual Info: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6401

Abstract: marking bad sot-23 marking 43A sot23
Contextual Info: PD- 93756 IRLML6401 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -12V G RDS(on) = 0.05Ω S Description These P-Channel MOSFETs from International Rectifier utilize advanced

yh 4100

Abstract: diode marking YG MARKING ZX sot-23 YC sot 23 CZMK22V Zx SOT-23 yl 1060 CZMK13V MARKING YG SOT-23 MARKING YG SOT23
Contextual Info: RECTRON CZMK Series SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DUAL ZENER DIODE Common Cathode SOT- 23 Absolute Maximun Ratings (Ta=25oC) Symbol Value Unit Power Dissipation at Tamb = 25 °C P tot 300 mW Junction Temperature Storage Temperature Tj Ts Zener Current see Table ""Chara.""

TSOP-6 .54

Abstract: irf5850 TSOP6 Marking Code 17
Contextual Info: PD - 95506B IRF5850PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International