Untitled
Abstract: No abstract text available
Text: Low Noise , Fast Transient 1A Step-Down Converter Product Description Features The GS5581 is a 2MHz step-down converter with an input voltage range of 2.7V to 5.5V and output voltage as low as 0.6V. It is optimized to react quickly to a load
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GS5581
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kmkp
Abstract: b628 BO-63 k44b BV9C MTDD 9l 15a
Text: 4B C6B:6C 4HVHJPYP[L J^RPTKWPJHR Y^VL VWU]PSPY^ XLTXUW |2} 4UZTYLW a7LHYZWLX bv9C< KF ;<K<:K }IFEh D<K8Ch GC8JK@:h N8K<Ih JKFE<h NFF; <K: b~FE> C@=< :P:C< 8E; |@>? I<C@89@C@KP bwFEM<E@<EK KF 8;ALJK K?< ;<K<:K@E> ;@JK8E:< 9P J<EJ@K@M@KP 8;ALJKD<EK GFK<EK@FD<K<I
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89JFIGK
kmkp
b628
BO-63
k44b
BV9C
MTDD
9l 15a
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YW 431
Abstract: No abstract text available
Text: Dual High-Efficiency PWM Step-Down DC-DC Converter Product Description Features The GS5586 is a dual high-efficiency Pulse-W idth- Modulated PWM step-down DC-DC converter with an input voltage range of 2.7V to 5.5V and output voltage as low as 0.6V. It is
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GS5586
Lane11
YW 431
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Untitled
Abstract: No abstract text available
Text: 800mA Synchronous Buck Switching Regulator Product Description Features The GS5578 is a step-down, current mode, DC-DC converter. At heavy load, the constant-frequency PWM control performs excellent stability and transient response. To ensure the longest battery life in portable
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800mA
GS5578
Lane11
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SOT-23-5L cmos
Abstract: No abstract text available
Text: 300mA CMOS LDO Product Description Features The GS2903 series of positive linear regulators feature low quiescent current Typ. 65uF with low dropout voltage, making them ideal for battery powered applications. Space-saving SOT-23 SOT-23-3LSOT-89 and SOT-23-5L package are
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300mA
GS2903
OT-23
OT-23-3Lã
OT-89
OT-23-5L
230mV
300mA
Lane11
SOT-23-5L cmos
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Untitled
Abstract: No abstract text available
Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9101, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart
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GSM9101,
-20V/-2
OT-23
Lane11
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Untitled
Abstract: No abstract text available
Text: P-Channel Enhancement Mode MOSFET Product Description Features GSM9101B, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone
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GSM9101B,
-20V/-2
OT-23
Lane11
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Untitled
Abstract: No abstract text available
Text: N-Channel Enhancement Mode MOSFET Product Description Features GSM9108, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line
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GSM9108,
OT-23-3L
GSM9108ZF
OT-23-3L)
Lane11
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Untitled
Abstract: No abstract text available
Text: N-Channel Enhancement Mode MOSFET Product Description Features The GSM9110 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to
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GSM9110
Lane11
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Untitled
Abstract: No abstract text available
Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6405TSF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power
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GSM6405TSF,
-30V/-5
-30V/-4
Lane11
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Untitled
Abstract: No abstract text available
Text: P-Channel Enhancement Mode MOSFET Product Description Features The GSM9109 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to
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GSM9109
-40V/-3
-40V/-2
Lane11
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Untitled
Abstract: No abstract text available
Text: N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
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GSM6604
Lane11
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4K41
Abstract: G 654 gk 244 Z4D11 1-E1C41 9d11 9C42 3c41 41311 abb B234
Text: 0123456789 8 6 466 4 !"#6$%6&"'"&" +,-./ 0.12,3-45161 72896:;<=>=-=3 0.12,3-4 IJK422 ILMK22 ;48=6@2 ILMN22 ;G5=EC@2 516=2 ?C93-,CC.q4B.12,3-451614IMN4224o4=8|./ 2 '6(""'**' s=B,6: .8 H=286,2,C31-C@q45@A=B 45@A=B4=3G-4G=66,G3=-4
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N22448.
3411IM4
AB841-}
C/D11
CG83C/
pE21G-5
4441r2=
34vxyvx4=
6G464?
06C41
4K41
G 654
gk 244
Z4D11
1-E1C41
9d11
9C42
3c41
41311 abb
B234
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Untitled
Abstract: No abstract text available
Text: Low Power Low Offset Voltage Single Comparator Product Description Features The GS391 consists of a independent precision voltage comparator which was designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also
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GS391
Lane11
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Untitled
Abstract: No abstract text available
Text: 1234561278927A6B23CADEFFFDE 9C DB 79 1234546789A89BC4D8EFE 25472888 A8EF F 3 !" #$% &#' 'F& $F3)9D7*93 6B62 9C26D7+ 3 !"
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1234561278927A6B23CADEF
1234546789A89BC4D8EF
12234567893A758BCD834E3F2
367D3
0D7D51
367D37D/
D7D83
67293513F2
83A758BC
6E34D3
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103p capacitor
Abstract: Film paper capacitors 431p 731P METALIZED POLYCARBONATE foil
Text: VISHAY yW T lndex Vishay FILM AND FOIL CAPACITORS FILM AND FOIL CAPACITOR INDEX INDEX, FILM AND FOIL C A PA CITO R S . 69 TYPE 192P PACER , Film/Foil Capacitors, Polyester. 70
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-Sep-00
103p capacitor
Film paper capacitors
431p
731P
METALIZED POLYCARBONATE
foil
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B6V2
Abstract: C6V8 BZYP13-C6V2
Text: 29-74/2 STABILISTOR BZYP 13 SWW 1156-141 S tabilistory krzem ow e ep ip lan arn e przeznaczone do stosow ania w ukladach stabilizacyjnych. T em p eratu ra zi^cza Zakres tem p eratu ry przechow yw ania t} 423 K 150°C tstg 233.373 K ( —40. + 100°C)
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BZYP13-C6V2
BZYP13-C6V8
BZYP13-B6V2
BZYP13-D6V2
B6V2
C6V8
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HC18U
Abstract: HC-18U HC49U/N-R1.8432MHZT
Text: HC49U / RESISTANCE WELD CRYSTAL The HC49U Quartz Crystal Unit features a rugged resistance weld package which allows for a better aging factor than its solder seal equivalent, HC18U. FEATURES Excellent Aging W ide Frequency Range "AT" C ut Crystal OPTIONS
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HC49U
HC18U.
X143-2Ö
HC49U
30PPM
50PPM
HC49U-W
HC18U
HC-18U
HC49U/N-R1.8432MHZT
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0312e
Abstract: 3912E 4311H sc 12000 0411h A03-11SR SA431
Text: Kingbright ] SIN G LE D IG IT N U M E R IC DISPLAYS Sx36 Sx03 Sx39 Sx04 Sx43 Sx05 M P art No. C om m on Anode C om m on C athode S A 03-11HW A S C 03-12H W A SA03-11EW A SC 03-12E W A Package Description 0.3 inch 7mm Em itting C olor+ M aterial W avelength
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03-11HW
SA03-11EW
A03-11G
03-11YWA
A03-11SR
03-12H
03-12E
03-12G
03-12Y
03-12S
0312e
3912E
4311H
sc 12000
0411h
SA431
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BF167
Abstract: J BF167 TEWA 00156033 CE25 T072 t448
Text: 12- 74/2 T R A N Z Y S T O R n-p-n & BF167 SWW 1156-213 Tranzystor krzem ow y planarny m alej m ocy w ielk iej czQ stotliwoici. Jest przeznaczony do stosow ania w stopniu regu lacyjnym w zm acniacza poSredniej cz^stotliwoSci w izji odbiorriik6w telew izyjn ych .
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BF167
BF167
J BF167
TEWA
00156033
CE25
T072
t448
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2x1 multiplexer
Abstract: No abstract text available
Text: H O N E YüJELL/SS ELEK-i MIL ~Ü3 D Ë J 4 5 5 1 0 7 2 O O O O S B b 1 "|~ Honeyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays
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HC20000
MIL-M-38510
Comm05
2x1 multiplexer
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KM2520A01SRC
Abstract: 1154 SRD kingbright L-934LG 5612s L53HD SA56-21HWA 30.22s L-1344I L-132XBR-7 12G-W
Text: INDEX A F . B A 5 6 -1 1 E W A . B A 5 6-1 1G W A . B A 5 6 -1 1 H W A .
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56-11S
56-11YWA
BA56-12EW
56-12S
6-12YW
23-11YW
TC24-11EW
24-11YW
0-11EWA
TC40-11GW
KM2520A01SRC
1154 SRD kingbright
L-934LG
5612s
L53HD
SA56-21HWA
30.22s
L-1344I
L-132XBR-7
12G-W
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Untitled
Abstract: No abstract text available
Text: HI1386Y HARRIS S E M I C O N D U C T O R 8-Bit, 75 MSPS Flash A/D Converter April 1995 Description Features • Differential Linearity E r r o r . ±0.5 LSB or Less This is a specification that outlines the mechanical and electrical characteristics for the HI1386Y, 8-bit Flash A/D
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HI1386Y
HI1386Y,
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: SANYO S E M I C O N D U C T O R CORP S3E J> O rdering num ber : EN4104 7^707 3 aOlQlb? bb'i ITSAJ T S 2 -I3 -Ô 7 C M O S LSI LC7931D No. 4104 SAW O i 80-channel Liquid-crystal Display Driver OVERVIEW PINOUT The LC7931D is an 80-channel liquid-crystal display
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EN4104
LC7931D
80-channel
LC7931D
80-bit,
80-bit
LC7985
LC86104
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