TEWA Search Results

30129

Contextual Info: J8 MX3- J7 MX3+ J6 MX1- J5 MX2- J4 MX2+ J3 MX1 + J2 M XO— J1 M XO + InNet Technologies, Inc. h ttp :/ / w w w .inn et-te ch .co m tewart Connector S tewart C o n n e c to r S y s t e m s r/ / / / / / / / / / / SH EET 1 OF 4 h ttp://w w w .stew artconnector.com

Contextual Info: J8 MX3- J7 MX3+ J6 MX1- J5 MX2- J4 MX2+ J3 MX1 + J2 M XO— J1 M XO + InNet Technologies, Inc. h ttp :/ / w w w .inn et-te ch .co m tewart Connector r/ / / / / / / / / / / SH EET 1 OF 4 S tewart C o n n e c to r S y s t e m s h ttp://w w w .stew artconnector.com

Contextual Info: J8 MX3- J7 MX3+ J6 MX1- J5 MX2- J4 MX2+ J3 MX1 + J2 M XO— J1 M XO + InNet Technologies, Inc. h ttp :/ / w w w .inn et-te ch .co m tewart Connector S tewart C o n n e c to r S y s t e m s r/ / / / / / / / / / / SH EET 1 OF 4 h ttp://w w w .stew artconnector.com

Contextual Info: J8 MX3- J7 MX3+ J6 MX1- J5 MX2- J4 MX2+ J3 MX1 + J2 M XO— J1 M XO + InNet Technologies, Inc. h ttp :/ / w w w .inn et-te ch .co m tewart Connector S tewart C o n n e c to r S y s t e m s r/ / / / / / / / / / / SH EET 1 OF 4 h ttp://w w w .stew artconnector.com

Contextual Info: InNet J8 MX3- J7 MX3+ J6 MX1- J5 MX2- J4 MX2+ J3 MX1 + J2 M XO— J1 M XO + Technologies, Inc. h ttp :/ / w w w .inn et-te ch .co m tewart Connector S tewart C o n n e c to r S y s t e m s r/////////// SHEET 1 OF 4 h ttp://w w w .stew artconnector.com DRAWING NO.

Contextual Info: InNet J8 MX3- J7 MX3+ J6 MX1- J5 MX2- J4 MX2+ J3 MX1 + J2 M XO— J1 M XO + Technologies, Inc. h ttp :/ / w w w .inn et-te ch .co m {tewart Connector S tewart C o n n e c to r S y s t e m s r/ / / / / / / / / / / SH EET 1 OF 4 h ttp://w w w .stew artconnector.com

L7C185

Contextual Info: L7C185 L7C185 DEVICES INCORPORATED 8K x 8 Static RAM Low Power 8K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 8 O ROW ADDRESS CE 1 CE 2 WE OE CONTROL as 2 V. The L7C185 and L7CL185-L consume only 30 µW and 15 µW (typical) respectively at 3 V, allowing

CM0805C161R-10

Contextual Info: CM0805C161R-10 UNCONTROLLED DOCUMENT PHYSICAL DIMENSIONS: C 1.20 [.0 4 7 ] + 0.20 [.0 0 8 ] + 0.20 [.0 0 8 ] + 0.20 [.0 0 8 ] D 0.15 [.0 0 6 ] + 0.10 [.0 0 4 ] A 2.00 [.0 7 9 ] B 1.20 [.0 4 7 ] T1 0.40 [.0 1 6 ] T2 0.40 [.0 1 6 ] E le ctrica l C h a ra c te ris tic s

6116 ram

Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
Contextual Info: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

Contextual Info: L7 C 191/192 64K x 4 Static RAM DESCRIPTION FEATURES □ 64K x 4 Static RAM with Separate I/O , Transparent Write L7C191 , or High Impedance Write (L7C192) □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation

Contextual Info: LO GI C D E V I C E S INC EbE D • S S b S iO S O Q O C H T t - a ' B _ 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum

Contextual Info: LOGIC DEVICES SbE INC D • S5b5TGS _ 64K x 4 Static RAM m T-46-23-05 n * blo ck The L7C194, L7C195, $nd L7C196 are high-performance, low-power CMOS static RAMs. The storage cells are organized as 65,536 words by 4 bits per word. Data In and Data Out

Contextual Info: L7C174 8K x 8 Cache-Tag Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 8 K x 8 C M O S S ta tic R A M w ith 8 -b it T a g C o m p a riso n L o g ic T h e L 7 C 1 7 4 is a h ig h -p e rfo rm a n ce , T h is d e v ic e is a v a ila b le in fiv e sp e ed

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ROW SELECT 8 O ROW ADDRESS CONTROL The L7C164 and L7C166 provide asynchronous unclocked operation with matching access and cycle times.

L7C174WC-15

Abstract: idt7174 l7c174wc15 L7C174CM20 L7C174WC25
Contextual Info: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Low Power Operation Active: 300 mW typical at 35 ns Standby: 500 µW typical ❑ Data Retention at 2 V for Battery Backup Operation

Contextual Info: L7C194/195 64K x 4 Static RAM DESCRIPTION FEATURES □ 64K x 4 Static RAM w ith C om m on I/O □ A uto-Pow erdow n D esign □ A d van ced CM O S Technology □ H igh Speed — to 15 n s m axim um □ L ow Pow er O peration Active: 210 mW typical at 35 ns

Contextual Info: L7C185 : v ;:i s r.r:;H pnH A m l FEATURES □ 8K x 8 Static RAM with Chip Select Pow erdow n, O utput Enable □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 425 m W typical at 25 ns

Contextual Info: L7C174 8K x 8 Cache-Tag S tatic RAM D E V IC E S IN C O R P O R A TE D FEATURES □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear □ High Speed Read Access Time — 12 ns maximum

Contextual Info: 6 4 K x 1 Radiation-Hard Static RAM FEATURES □ 64 K x 1 R a d ia tio n -H ard Static R A M w ith S e p a ra te I/O , C h ip Select P o w erd o w n □ A d d r e s s A c c e ss Tim e: < 50 n s at 8 0 GC □ T o tal D ose: 2 1 0 6 R a d s S i0 2 □ D o se R a te U p se t: 2 1 0 5 R a d s ( S i ) / s

TZ1114

Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design

Contextual Info: jjjm MMMM ÆmSmmkjjjjjj jmSSm „„„I L7C199 mm 32K x 8 Static RAM DEVICES INCORPORATED FEATURES □ 32K x 8 Static RAM w ith Chip Select Powerdown, O utput Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

Contextual Info: J' ’ _ •■■■ ’WP’’ _ ^ _ L 7 C 1 7 3 /1 7 4 8K x 8 Cache-Tag Static RAM mm DEVICES INCORPORATED FEATURES □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear

min33

Abstract: STB60N06-14 parametry tewa TG3A TG3F T018 tranzystory 60HS tg5 tranzystor
Contextual Info: 5-74/1 T R A N Z Y S T O R Y p-n-p O TG2, TG3A, TG3F, TG4, TG5 i TG8 SWW 1156-211 Tranzystory germ anow e stop ow e m alej m ocy m alej cz§stotliwoäci. Tranzystory TG2, TG3A, TG3F, TG4 i TG5 przaznaczone do stosow ania w ukiadach w zm acniajqcych m.cz. Tranzystor TG8 jest przeznaczcmy do stosow ania w uk ia­