Sallen-Key
Abstract: Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23
Text: AN2995 Demonstration board user guidelines for single operational amplifiers Introduction This demonstration board is designed to help in the characterization of single operational amplifiers in SOT23-5 two different pinouts and SC70-5 packages. Operational amplifiers
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AN2995
OT23-5
SC70-5
OT23-6
SC70-6
Sallen-Key
Z4 SOT23
opamp applications schematics
Z14 SC70-6
Z14 SOT23-6
Z8 SOT23
sot23t
cmos opamp
Z6 SOT23
z1 sot23
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 350mW Surface Mount Zener Diodes BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1
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350mW
BZX84C3V0
OT-23
/W200
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Untitled
Abstract: No abstract text available
Text: Product specification BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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BZX84C3V0
OT-23
350mW
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100B330JW
Abstract: chip resistors 0805 philips MRF9100 esd z10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
100B330JW
chip resistors 0805 philips
esd z10
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100B220GW
Abstract: 100B100GW
Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100R3
MRF9100SR3
100B220GW
100B100GW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
BZX84C2V4-BZX84C39
OT-23
350mW
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
300us.
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AFT504
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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AFT05MS004N
AFT05MS004NT1
AFT504
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BZX84C3V3 z14
Abstract: diode zener z9 Z16 SOT23
Text: 350mW ZENER DIODES BZX84 SERIES 350mW ZENER DIODE • The latest comprehensive data to fully support these parts is readily available. • • • • • New Product SOT23 Package Voltage Max. Zener Typ. Temp Max. Reverse TA=25°C Range Impedance Coefficient
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350mW
BZX84
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C3V3 z14
diode zener z9
Z16 SOT23
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BZX84-C5V1
Abstract: No abstract text available
Text: BZX84Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.3 Watts FEATURES SOT-23 • Planar die construction • 300mW power dissipation rating • Ultra-small surface mount package SOT-23 Dim. A A1 b c D E E1 e
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BZX84Cx
OT-23
OT-23
300mW
J-STD-020D
2002/95/EC
Volta14
Jul-2010,
KSJR06
BZX84-C5V1
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kz4 y6
Abstract: KY8 Y8 Y6 kz4 BZX84C2V7 ky4 diode kz4 diode ky2 y3 KZ9 Y6 BZX84C13 KY3 Y3 kz4
Text: BZX84C2V7 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.7V - 51V Ideally Suited for Automated Assembly Processes SOT-23 Mechanical Data • • • • • • Case: SOT-23, Molded Plastic
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BZX84C2V7
BZX84C51
350mW
OT-23
OT-23,
MIL-STD-202,
BZX84C4V3
BZX84C4V7
BZX84C5V1
kz4 y6
KY8 Y8
Y6 kz4
ky4 diode
kz4 diode
ky2 y3
KZ9 Y6
BZX84C13 KY3
Y3 kz4
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
OT-23
BZX84C2V4-BZX84C39
300mW
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Z6 DIODE
Abstract: No abstract text available
Text: Zener Diode ctparts.com CTZ84C Series Not shown at actual size. 2.4V ~ 39V RoHS Compliant CHARACTERISTICS Description: SOT-23 Plastic-Encapsulated Zener Diode Features: Planar Die Construction. 350mW Power Dissipation. Zener Voltages from 2.4V ~ 39V. Ideally Suited for Automated
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CTZ84C
OT-23
350mW
Z6 DIODE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100R3
MRF9100SR3
MRF9100/D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
OT-23
BZX84C2V4-BZX84C39
300mW
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Transistor J182
Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF9100/D
MRF9100
MRF9100R3
MRF9100SR3
MRF9100
MRF9100R3
Transistor J182
MRF9100SR3
08053G105ZATEA
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100LR3
MRF9100LSR3
MRF9100LR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100
MRF9100R3
MRF9100SR3
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diode zener Z11
Abstract: Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation
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OT-23
BZX84C2V4-BZX84C39
OT-23
350mW
diode zener Z11
Y415
Y6 ZENER DIODE
C18 zener
Zener diode z12 15
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V9
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81g diode
Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
Text: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232
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OCR Scan
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BZX84C
350mW
MMBZ5221B
5256B
BZX84
Z17/W9
81g diode
8F sot23
Z14 SOT23-5
8Y SOT23
zener diode 22v
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zener y11
Abstract: zener 472
Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N
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Diodes/SOT23
zener y11
zener 472
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marking code ZENER
Abstract: BZX84C5V1 bzx84c BZX84C3V3 z14 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B MMBZ5225B
Text: JGD BZX84C - SERIES o SURFACE MOUNT ZENER DIODES/SOT - 23 Ta = 25^ CrossReference Mar king Code Part No. Zener Voltage @ Izt Vz V Max.Dyn. Test Max.Dyn. Test Imped. Current Imped. Current @lzk ¿Izt Rev. Current @Vr Temp Coeff. @Izt Zzt(Q ) Izt(mA) Zzk(Q ) Izk(mA) avz( %/k; 1K/ulA)
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BZX84C
BZX84C2V7
MMBZ5223B
BZX84C3
MMBZ5225B
BZX84C3V3
MMBZ5226B
BZX84C3V6
MMBZ5227B
SZX84C3V9
marking code ZENER
BZX84C5V1
BZX84C3V3 z14
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Untitled
Abstract: No abstract text available
Text: FZ84C2V4S THRU FZ84C24VS SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LUX Package: SOT-23 3 ZENER DIODES ZXX Pinout: 1-Anode, 2-NC, 3-Cathode (Vfr=0.9V Max @ Zener Voltage TYPE Vz1 (V) MARK @ lzT1=5fnA F=1 OmA For All Typos) (225mW) Max Zener
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FZ84C2V4S
FZ84C24VS
OT-23
225mW)
4C15VS
FZB4C16VS
FZB4C18VS
FZB4G20VS
F284C22VS
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153 SOT23
Abstract: No abstract text available
Text: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at
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350mW)
BZX84
T0-236AB
OT-23)
BZX84-C2V4
BZX84-C2V7
BZX84-C3
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
153 SOT23
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352
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HN2D01FU
HN2D02FU
OT-23MOD)
02CZ5
diode Z47
z43 diode
Z5.6
Z3.3
S360 DIODE
diode Z27
S368
diode zener z6
1s diode
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