Z14 SMT Search Results

MOSFET Transistors IRL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

22 Z1

Abstract: z14 SMT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

J524

Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

567 tone

Abstract: 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3
Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

100B100JCA500X

Abstract: CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3
Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

AGR18060E

Abstract: AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X
Contextual Info: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global

100B8R2JCA500X

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114
Contextual Info: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Document Number: MRF19060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 8, 3/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Freescale Semiconductor Technical Data MRF19060 Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

465B

Abstract: AN1955 ATC100B102JT50XT CDR33BX104AKYS MRF5S19150H MRF5S19150HR3 T491C105M050AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

567 tone

Abstract: 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060LR3 MRF19060LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

transistor 7350 A

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
Contextual Info: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

CDR33BX104AKWS

Abstract: MRF19060 MRF19060LR3 MRF19060LSR3 100B100JCA500X 100B5R1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

CDR33BX104AKWS

Abstract: MRF19060 MRF19060R3 MRF19060SR3 100B100JCA500X
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs

Contextual Info: Freescale Semiconductor Technical Data MRF19060 Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: MRF5S19150H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier