Z38 SERIES Search Results

Contextual Info: S E M I C O N D U C T O R TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced

Contextual Info: S E M I C O N D U C T O R TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced

Z38 Series

Abstract: VT2V8UP5510 "Rf Front-End" sharp VTST5HD950 VTST-Series 13B1 VTST5HD970 VTST5JB540 VTST5JF540 VTST5UF740
Contextual Info: E099_113.fm 109 ページ ２００１年９月２３日 日曜日 午後１時４５分 RF ANALOG TERRESTRIAL RF FRONT-END UNIT ✩New product • RF FRONT-END UNITS <VTST Series> ◆ Features 1 Miniature size achieved using thin profile, low height design in industry standard RF front-end unit (terminal shape and terminal pin arrays)

Contextual Info: Revised February 2000 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced

7Z38

Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X Z38 Series
Contextual Info: Revised November 1999 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced

7Z38

Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X
Contextual Info: Revised January 2001 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced

7Z38

Contextual Info: Revised June 2000 NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced

7Z38

Abstract: MA05B NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X SC70-5 JA SOT23
Contextual Info: NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-Input NAND Gate with open drain output stage from Fairchild’s Ultra High Speed Series of TinyLogic™. The device is fabricated with advanced

w50d

Abstract: IMD-B101-01 Fresnel lens f60D pyroelectric amplifier circuit pyroelectric infrared sensor IMD-B102-01 "Pyroelectric Infrared Sensor"
Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. S21E3.pdf 03.2.17

sharp Universal lnb bs1r8el100a

Abstract: sharp Universal lnb BS1R8EL100A BS2F7VZ0194 BS2S7HZ6306 BS2S7HZ0302A BS2F7VZ0194A BS2S7VZ0302A BS2F7VZ0194,A SHARP sharp bs2f7vz0724
Contextual Info: RF LOW NOISE BLOCKDOWN CONVERTER • Europe: LNB for Broadcasting Satellite ◆ Features 1 (2) (3) (4) Wide band type receiving all broadcasting channels (analog & digital) of Europe. [Universal LNB] Originally developed feed-horn waveguide makes the wide-band, low-noise characteristics possible.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

7Z38

Contextual Info: :M I C O N D U C T D R Revised March 1999 tm NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output Features • Space saving SOT23 or SC70 5-lead package specilied to operate over the 1.8V to 5.5V Vc c range. The inputs and output are high impedance when V qq is OV.

Z-34

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

226 35K capacitor

Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Abstract: capacitor 226 35K R 226 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

226 35K

Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

capacitor 226 35K

Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

z24 mosfet

Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global

7Z38

Abstract: MA05B MO-178 NC7SZ38 NC7SZ38M5 NC7SZ38M5X NC7SZ38P5 NC7SZ38P5X jedec MO-178 AB
Contextual Info: S E M I C O N D U C T O R Revised M arch 1999 TM NC7SZ38 TinyLogic UHS 2-Input NAND Gate Open Drain Output Features • S pace saving SO T23 or SC 70 5-lead package specified to operate o ver the 1.8V to 5 .5V V qq range. The inputs and output are high im pedance w hen V qq is OV.

AGR09180EF

Abstract: JESD22-C101A transistor z14 L
Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global

C40 Sprague

Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
Contextual Info: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular