ZC805 Search Results

Contextual Info: H S I ELECTRONICS INC 3SE D ES 5b5b4bb 0DD03S4 b E3MSI ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES elG ctron lcs m e The abrupt ZC700 and hyperabrupt ZC800 series tuning diodes together offer a selection of characteristics that could fit many U H F /V H F applications. Where required the higher

ZC825 SOT-23

Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 ZC82
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V

ZC800

Abstract: ZC801 ZC802 ZC803 ZC804 ZC820 ZC821 ZC822 ZC823 .564 SOT23
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SER IES FOR PCB MOUNTING. C H A R A C T E R IS T IC S at 2 5 °C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q

ZC800

Abstract: HYPERABRUPT ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 ZC820 ZC821
Contextual Info: HYPER ABRUPT VARIABLE CAPACITANCE TUNER DIODES S IL IC O N IO N IM P L A N T E D H Y P E R A B R U P T T U N E R D IO D E S Designed for use in HF, V H F, U H F electronic tuning applications where large capacitance variations and high Q are required. Tamb = 25*C

Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES SERIES ZC700 - ZC714, B, C, ZC800 - ZC899, A, B. _ : i The abrupt ZC700 and hyperabrupt ZC800 series tuning diodes together offer a selection of characteristics that could fit many U H F/V H F applications. Where required the higher

diode S3V 68

Abstract: DIODE S3V 75 DIODE S3V DIODE S3V 66 DIODE S3V 50 DIODE S3V 08 DIODE S3V 40 S3V 68 S3V 84 S3V Diode
Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES R Æ 1 S electronics m e. SERIES ZC700 - ZC714, B, C, ZC800 - ZC899, A, B. The abrupt ZC 700 and hyperabrupt ZC800 series tun ing diodes together o ffe r a selection o f characteristics th a t could f it many U H F /V H F applications. Where required the higher

zc826 IC

Contextual Info: PLESSEY S E M I C O N D / D I S C R E T E T S 7 2 20 5 33 PLESSEY dF | ? 2E0SB3 95D 0 4 9 8 4 S E M I C O N D / D I S C RE TE fl D i TABLE 4 : VARIABLE CAPACITANCE TUNER DIODES HYPEBABRUPTTYPEI ! i T-oi-n Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning

Contextual Info: M S I ELECTRONICS INC IDE I | St,5L4bb 00D03ST 7 | G&1SD ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES electronics m e The abrupt ZC700 and hyperabrupt ZC 800 series tuning diodes together offer a selection o f characteristics that could fit many U H F /V H F applications. Where required the higher

Contextual Info: ABRUPT - HYPERABRUPT UHF/VHF TUNING DIODES electronics m e. The abrupt Z C 7 0 0 and hyperabrupt Z C 8 0 0 series tuning diodes together offer a selection of characteristics that could fit many U H F / V H F applications. Where required the higher Q 's of the Z C 7 0 0 's can be traded for the larger capacitance tuning ratios of the Z C 80 0's.

marking NB D9 sot-23

Abstract: ZC821 ZC825 SOT23 ZC825 SOT-23 ZC800 ZC801 ZC802 ZC803 ZC820 ZC822
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICON ION IMPLANTED HYPERABRUPT TUNER DIODES Designed for use in HF, VHF and UHF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a semiconductor doping technique enabling close control of doping and profile. Its

ZC821

Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its