ZD 410 MF Search Results

1310nm TRANSCEIVER CIRCUIT DIAGRAM

Abstract: 8GHz transceiver specification ZD 410 MF 1310nm photodiode for 10Gbps 1310nm ROSA 10Gbps 1310nm TRANSMITTER CIRCUIT DIAGRAM GR-253-CORE I-64 MF-10KSXA-007ZA SDD11
Contextual Info: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-10KSXA-007ZA 10Gbps 1310nm XFP Optical Transceiver XFP Multirate Optical Transceiver MF-10KSXA-007ZA Features: • • • • • • • Protocol Independent 10Gbps transceiver Hot pluggable

ZD 410 MF

Abstract: 8GHz transceiver specification MF-10KSXA-008ZA pin photodiode 1550nm sensitivity 10gbps 1550nm laser diode for 10Gbps MF-10KSXA-009ZA SDD11 mitsubishi rosa mitsubishi receiver Receptacle LC
Contextual Info: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-10KSXA-008ZA/009ZA 10Gbps 1550nm XFP Optical Transceiver XFP Multirate Optical Transceiver MF-10KSXA-008ZA MF-10KSXA-009ZA Features: • • • • • • • Protocol Independent 10Gbps transceiver

t07 transistor smd

Abstract: smd transistor 2T6 SMD Transistor t07
Contextual Info: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •

AT49F1025-70VC

Abstract: AT49F1025
Contextual Info: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Word By Word Programming -1 0 ^s/Word Typical Hardware Data Protection

WD1010

Abstract: wd10c20 WD2010 disk
Contextual Info: WESTERN C O R P O R A DIGITAL T I O N W D10C20-05 Self-Adjusting Data Separator FEATURES • • • PROCESSES ALL SENSITIVE READ/WRITE DATA SIGNALS CMOS TECHNOLOGY DESIGNED FOR ST506/ST412 AND WD1010/ WD2010 INTERFACE ADJUST d d d d d d d d d d d d d V SS

ZD 410 MF

Contextual Info: f* ALUMINUM ELECTROLYTIC CAPACITORS n ic h x c o n Chip Type, Higher Capacitance Range U J F jrS M D Long Lile Anti-Solvent Feature Through ’OOVonly • Chip Type, higher capacitance in larger case sizes <j> 12.5, ^ 1 6 , ^ 1 8 , ^ 20) • Designed for surface mounting on high density PC board.

equivalent transistor TT 3034

Abstract: DK434 TT 3034 cc 3053 myg 14 CDVM JE02 ZD 410 MF k84h 734E-02
Contextual Info: @7A45B "404)C9(0 <43B9)*DD* !"#$%!&'()*+,)-./0121)!3451'657(3)8/09 #$%:9455(;)#,)<./0121)<=;0/';(>(32"(?=;0/';(>(3 "(1B3/'0/65 V73$VG89:(A,3$(0.1),+1430$,30E+02)$)(0.'I7(E+0: $ ( ./:

ZD 410 MF

Abstract: SMD MARKING CODE 4r7
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS • ■ ■ Chip Type, Higher Capacitance Range n ic ltic o n L I!* ■ series 1i^ l For SMD Long Life Anti-Solvent Feature Through 100V only • Chip Type,higher capacitance in larger case sizes ( ^ 12.5, ^ 16, ^ 18, ^20)

zd 332

Contextual Info: n ie lli con ALUMINUM ELECTROLYTIC CAPACITORS SB Chip Type, Higher Capacitance Range series ForSMD 3 Ling Lite Anti-Solvent "eature * Chip Type, higher capacitance in larger case sizes <f>12.5, 16, <p 18, ^2 0 * Designed for surface mounting on high density PC board.

Contextual Info: 1- 1 R23A S E R IE S 2600-2000 VOLTS RANGE 450 AUP AVG HOCKEY PÜK D IF F U S E D JU N C TIO N R E C T IF IE R D IO D ES IN T ER N A T IO N A L R E C T IF IE R VOLTAGE RATINGS : i PART I NUMBSR « : i i 1 1 i._ 1 1 t : ï 1 A23ASBA « 1 2800 t R23A24A

566 pin diagram

Abstract: 734A coaxial cable hp54502a hp3784A TAIS SOT TXC-02021 power combiner broadband transformers HP-3784A 10A ferrite bead b3-z
Contextual Info: ART Devices Advanced DS3/STS-1 Receiver/Transmitter ART: TXC-02020 44-Pin ARTE: TXC-02021 (68-Pin) • Single device line interface for DS3 and STS-1 • Single +5V power supply • Meets ‘crossconnect frame’ mask requirements • Adaptive equalization for 0 - 450 ft. of cable

Contextual Info: ^EDI EDI84256CS 256Kx4 Static Ram EL£CTRONC DESIGNS. V4C. 256Kx4 Monolithic CMOS Static RAM, High Speed Features The EDI84256CS is a high speed, high performance, 256Kx4 bit CMOS Static megabit density monolithic Static RAM organized as 256Kx4 bits. Random Access Memory

WD10C20-05

Abstract: WD2010 WD1010 wd10c20 controller st506 C110 disk drive read write amplifier
Contextual Info: WESTERN C O R P O R D IG ITA L A T I O N £ o _L o O 10 o W D10C20-05 Self-Adjusting Data Separator FEATURES • • PROCESSES ALL SENSITIVE READ/WRITE DATA SIG N ALS CM O S TEC HNO LOG Y ADJUST = d d d d d d d d d V SS WGATE RGATE • • • • DESIGNED FOR ST506/ST412 A N D WD1010/

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MARKING CODE SMD JW

Abstract: P600 S8000 time-zone network identification module s8000 DP950
Contextual Info: System 8000 ZEUS Administrator Manual 03-3246-04 October, 1983 Copyright 1983 by Zilog Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, elec­ tronic, mechanical, photocopying, recording, or otherwise,

Contextual Info: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)

R07DS0095EJ0800

Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RQA0011

Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Contextual Info: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

erni 41612

Contextual Info: 074484_Cover_neu_A5_2010 29.04.2010 18:08 Uhr Seite U4U11 Catalog ERNI Electronics The Technology Center ERNI Electronics GmbH Seestrasse 9 73099 Adelberg/Germany Tel +49 71 66 50-0 Fax +49 71 66 50-282 info@erni.de Europe South America ERNI Electronics, Inc.

Contextual Info: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally C lam ped N -C h an n e l IG B T T h is L o g ic L e v e l In s u la te d G a te B ip o la r T ra n s is to r IG B T fe a tu re s G a te - E m itte r E S D p ro te c tio n , G a te C o lle c to r O v e r V oltage P rotection from m on olithic circu itry fo r usage as an Ignition

B25DC

Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Contextual Info: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS