ZO 103 MA 75 522 Search Results

ZO 150 74

Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.

cfy 19 siemens

Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Contextual Info: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

transistor zo 103 MA 7S 738

Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D173 PRF949 UHF wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 Philips Semiconductors Product specification UHF wideband transistor PRF949 FEATURES PINNING SOT416 SC-75 • Small size PIN

UHF transistor GHz

Abstract: MARKING CODE V0 PRF949 SC-75 transistor zo 109
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PRF949 UHF wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 Philips Semiconductors Product specification UHF wideband transistor PRF949 FEATURES PINNING SOT416 SC-75 • Small size

MAR 745 TRANSISTOR

Abstract: marking code 10 sot23 BFR92A BFR92AT SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR92AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AT FEATURES DESCRIPTION • High power gain

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Transistor BFR 97

Abstract: bfr 49 transistor BFR34A
Contextual Info: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

5N521

Abstract: CFY30
Contextual Info: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization

ATF-10100

Abstract: ATF-10100-GP3 ATF10100
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise

nec 2401 831

Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SOT343N

Abstract: BFG540W DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor

MSB003

Abstract: BFR540
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Aug 23 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 FEATURES DESCRIPTION

BFG540 N43

Abstract: NPN N43 transistor n49 BFG540 n37 transistor MRA751 Code N43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 03 2000 May 23 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor

BFR93A

Abstract: BFR93AT SC-75 MAR 745 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR93AT NPN 5 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 09 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AT FEATURES DESCRIPTION • High power gain

3699 npn

Abstract: 2SC5010 P10389JJ2V0DSJ1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

ATF-10100

Contextual Info: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data A TF-10100 F e atu res • L o w N o ise F ig u re : 0.5 dB Typical at 4 GHz • L o w B ia s: Vds = 2V,I ds = 25mA • H igh A sso c ia te d G ain: 14.0 dB Typical at 4 GHz

uhf linear amplifier module

Abstract: GP 809 DIODE MMH3101 81348 MHW7185CL 33048 Power Amplifier MMIC 2.6 GHz 53368 Freescale Semiconductor hybrid amplifier modules MARKING T MMIC AMPLIFIER 32DB GAIN
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor Device Data. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules. DL209 Rev. 2 2/2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 CATV Distribution Amplifier Modules

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

BFG35

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

TV booster diagram

Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE
Contextual Info: RF Linear Amplifiers Freescale Semiconductor Device Data DL210 Rev. 3 3/2007 RF Product Portfolio freescale.com/rf Freescale Semiconductor offers RF Solutions a broad portfolio of RF products that utilize technologies such as LDMOS, GaAs, SiGe:C, RF CMOS