ZO 103 MA 75 607 Search Results

NEC NF 932

Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

2SC5009

Abstract: 2SC5009-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

yx 861

Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE

ic m 61266

Abstract: an 17830 MGA-62563 82945 A 68066 1041-64 ic 8279 36.3769 59703 AT-41486
Contextual Info: s-params.txt Spice Parameters - S-params ABA-51563 SP.txt -!ABA-51563 !s-parameters at Vd=5V. Last updated 16/01/03 AR. # GHZ S MA R 50 0.05 0.062 0.1 0.063 0.15 0.063 0.2 0.063 0.25 0.061

ISO7420FE

Contextual Info: ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC SLLSE45D – DECEMBER 2010 – REVISED DECEMBER 2011 www.ti.com Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7420FCC, ISO7421E, ISO7421FE, ISO7421FCC FEATURES

FS2452

Abstract: ISO7420FE
Contextual Info: ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC SLLSE45C – DECEMBER 2010 – REVISED MARCH 2011 www.ti.com Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7420FCC, ISO7421E, ISO7421FE, ISO7421FCC FEATURES

Contextual Info: ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC SLLSE45D – DECEMBER 2010 – REVISED DECEMBER 2011 www.ti.com Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7420FCC, ISO7421E, ISO7421FE, ISO7421FCC FEATURES

ISO7420FE

Abstract: ISO7421 ISO7420
Contextual Info: ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC SLLSE45C – DECEMBER 2010 – REVISED MARCH 2011 www.ti.com Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7420FCC, ISO7421E, ISO7421FE, ISO7421FCC FEATURES

AT1025

Contextual Info: ISO7420E, ISO7420FE ISO7421E, ISO7421FE www.ti.com SLLSE45E – DECEMBER 2010 – REVISED JANUARY 2013 Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7421E, ISO7421FE FEATURES APPLICATIONS • • • 1 2 • • • •

ISO7420FE

Abstract: ISO7420 ISO7421 ISO7420EDR SO7421 ISO7421FCCD
Contextual Info: ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC SLLSE45C – DECEMBER 2010 – REVISED MARCH 2011 www.ti.com Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7420FCC, ISO7421E, ISO7421FE, ISO7421FCC FEATURES

Contextual Info: ISO7420E, ISO7420FE ISO7421E, ISO7421FE www.ti.com SLLSE45E – DECEMBER 2010 – REVISED JANUARY 2013 Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7421E, ISO7421FE FEATURES APPLICATIONS • • • 1 2 • • • •

ISO7420FE

Contextual Info: ISO7420E, ISO7420FE, ISO7420FCC ISO7421E, ISO7421FE, ISO7421FCC SLLSE45D – DECEMBER 2010 – REVISED DECEMBER 2011 www.ti.com Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7420FCC, ISO7421E, ISO7421FE, ISO7421FCC FEATURES

Contextual Info: ISO7420E, ISO7420FE ISO7421E, ISO7421FE www.ti.com SLLSE45E – DECEMBER 2010 – REVISED JANUARY 2013 Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7421E, ISO7421FE FEATURES APPLICATIONS • • • 1 2 • • • •

Contextual Info: ISO7420E, ISO7420FE ISO7421E, ISO7421FE www.ti.com SLLSE45E – DECEMBER 2010 – REVISED JANUARY 2013 Low-Power Dual Channel Digital Isolators Check for Samples: ISO7420E, ISO7420FE, ISO7421E, ISO7421FE FEATURES APPLICATIONS • • • 1 2 • • • •

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

7 pin transformer

Abstract: ISO3086T
Contextual Info: ISO3086T SLLSE27A – JANUARY 2011 – REVISED MARCH 2011 www.ti.com Isolated 5V RS-485 Transceiver With Integrated Transformer Driver Check for Samples: ISO3086T FEATURES 1 • • • • • • • • • • 3000 VRMS / 4242 VPK Isolation Bus-Pin ESD Protection

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

r4363

Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED

d7810

Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED

CRYSTAL-16

Abstract: ZU 607 st zo 607 24MHZ 48MHZ PC11 W164 xtal 3225 25 MHZ Crystal16
Contextual Info: Spread Spectrum Desktop/Notebook System Frequency Generator Features Key Specifications • M axim ized EMI su p p re ssio n u sin g C ypress’s Spread Spectrum tech n o lo g y • Reduces m easured EMI by as m uch as 10 dB • l2C program m able to 153 MHz 16 selectable

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!