ZO 150 69 Search Results

Contextual Info: REVISIONS ZO NE LTR A & C ECKi. 31633 N E H R E L E A S E . sacèA GODERAI. UP-OWS. SIS« S C N 3336»1# & W A S : M - E - 'f 3 3 0 2 » - O S DESCRIPTION APPRO VED DATE !o/tá,/fo 1 _ 455 ,450 .065ni/i -150 rspcp .063 ^ .I45ütfc^ .062 p|^ .060 .089 p|^ .087

zo 150 66

Abstract: V301R 65ZO V361
Contextual Info: LOW PROFILE SERIES SPECIFICATIONS 300» 3 2 0 ,3 8 0 AND 3 3 0 VAC Varistors Maximum Ratings R e co g n itio n s To S a fe ty A gency S ta n d a rd s M aida Style Num ber R 69* ‘ Z O V 3 0 1 R A 1 7 5 R 65* *ZO V301 RA 350 R 66* 1Z O V 30 1R A 360 S66Ü ZO V301R A 460

Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-699A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: AMMC - 5620 6 - 20 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features Avago Technologies’ AMMC-5620 MMIC is a GaAs wideband amplifier designed for medium output power and

Hitachi DSA0076

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

1SV70

Abstract: BB403M Hitachi DSA00311
Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A Z 2nd. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0076

Abstract: 1SV70 BB403M
Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0076

Abstract: 1SV70 BB303C SOT343 C5 K-806
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Contextual Info: ASL912 ASL912 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features • 50 ~ 1200 MHz Bandwidth  13.1 dB Gain at 500 MHz  Positive Gain Slope  CSO : 69 dBc, CTB : 66 dBc @ Pout = 110 dBV flat for NTSC 79 channels + QAM256 75 channels, -6 dB offset

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 47.3 dBm Nominal PSAT at 3 GHz 69.5% Maximum PAE 19.8 dB Nominal Power Gain at 3 GHz

ICS853111

Abstract: ICS853111AY MC100EP111 MC100LVEP111 MS-026
Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS

Contextual Info: DATA SHEET PRELIMINARY ICS853111 ICS853111 Integrated DIFFERENTIAL-TO-2.5V/3.3V LOW SKEW, 1-TO-10 Circuit Systems, Inc. BUFFER LVPECL/ECL FANOUT LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/

WQFN0202-8V

Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111A LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111A is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS

ICS853111

Abstract: ICS853111-02 MC100EP111 MC100LVEP111
Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111-02 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111-02 is a low skew, high performance 1 - t o - 10 Differential-to-2.5V/3.3V HiPerClockS

Contextual Info: Integrated Circuit Systems, Inc. ICS853111B LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111B is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS ECL Fanout Buffer and a member of the

zo 405

Abstract: 2SC4993
Contextual Info: 2SC4993 Silicon NPN Bipolar Transistor Application MPAK–4 VHF & UHF wide band amplifier 4 Features • High gain bandwidth product fT = 10.5 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

32-PIN

Abstract: ICS853111 ICS853111B 3094
Contextual Info: Integrated Circuit Systems, Inc. ICS853111B LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111B is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS ECL Fanout Buffer and a member of the

ICS853111

Abstract: ICS853111-02
Contextual Info: Integrated Circuit Systems, Inc. ICS853111-02 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111-02 is a low skew, high performance 1 - t o - 10 Differential-to-2.5V/3.3V HiPerClockS LVPECL/ECL Fanout Buffer and a member

ZO 109

Abstract: zo 107 2SC5247 Hitachi DSA0014
Contextual Info: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector