ZO DIODE Search Results

Contextual Info: Product specification Philips Semiconductors Military Linear Products Wideband high frequency amplifier 5205 DESCRIPTION FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB 6 dB noise figure Zo = 7 5 ÎÏ (Zo = 50£2) • No external components required

RF TRANSISTOR

Abstract: Z0-28F ZO-28 injector zo-28f Z0-28 ZO-28/F z0-28/f RF power transistors 3000 BIAS Power Technology
Contextual Info: ZO-28/F BIAS DEVICE Thermal Tracking CASE OUTLINE GENERAL DESCRIPTION 55GU The ZO-28/F is a bias device designed to work with very high power BiPolar transistors, operating Class A and AB. It has extremely low source impedance and high current handling capability. The package may be physically mounted

injector

Abstract: zo28f ZO-28F power injector 55GU ZO-28
Contextual Info: ZO-28/F BIAS DEVICE Thermal Tracking CASE OUTLINE GENERAL DESCRIPTION 55GU The ZO-28/F is a bias device designed to work with very high power BiPolar transistors, operating Class A and AB. It has extremely low source impedance and high current handling capability. The package may be physically mounted

in4728

Abstract: in4764 bs9305 IN371 Z0B0.7 IN4628 IN4400 Z0B11 Z0B12 Z0B15
Contextual Info: Voltage Regulator Diodes Z4 Series ZO Series Electrical characteristics at 25°C Type Z0B0.7 Z0B1.4 Z0B2.0 Z0B2.2 Z0B2.4 Z0B2.7 Z0B3.0 Z0B3.3 Z0B3.6 Z0B3.9 Z0B4.3 Z0B4.7 Z0B5.1 Z0B5.6 Z0B6.2 Z0B6.8 Z0B7.5 Z0B8.2 Z0B9.1 Z0B10 Z0B11 Z0B12 Z0B13 Z0B15 Z0B16 Z0B18

DIODE NETWORKS

Abstract: schottky diode
Contextual Info: Application Notes Introduction to Schottky Diode Networks Zo ESD D Technical advances in the electronics industry, particularly in today’s hand-held and portable communication products, has resulted in faster and much more complex semiconductor devices and systems. In this rapidly changing environment,

High-Frequency Wideband Power Transformers

Abstract: 130U noise diode
Contextual Info: Product specification Philips Semiconductors Military Linear Products Wideband high frequency amplifier 5205 DESCRIPTION FEATURES • 600MHz bandwidth • 20dB insertion gain • 4.8dB 6dB noise figure Zq = 75Q (Zo = 50£2) • No external components required

operational amplifier discrete schematic

Abstract: 1s21 diode ltls zo 103 ma 130U High-Frequency Wideband Power Transformers
Contextual Info: Product specification Philips Semiconductors Military Linear Products 5205 Wideband high frequency amplifier • 20dB insertion gain • 4.8dB 6dB noise figure Zq = 75Q (Zo = 50£2) • No external components required • Input and output impedances matched to

in4728

Abstract: IN4158 in4764 IN4400 IN4193 104 Z4 z0b07 IN4358 Z0B11 Z0B12
Contextual Info: Z4 Series ZO Series 1W Voltage Regulator D iodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con­ figurations. P max c o n t-

in4728

Abstract: zener diode Z483 IN4158 zener diode Z487 104 Z4 Z4 13 Z4*13 z4810 Z4818 D029
Contextual Info: Z4 Series ZO Series 1W Voltage Regulator Diodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con­ figurations. P max c o n t- 1W

zener diode Z483

Abstract: IN3016 in4728 Z4818 Z4B10 Z4B11 Z4B12 Z4B13 Z4B15 Z4B16
Contextual Info: Z4 Series ZO Series Electrical characteristics at 25°C + 5% Voltage Toi Type Z4B3.0 Z4B3.3 Z4B3.6 Z4B3.9 Z4B4.3 Z4B4.7 Z4B5.1 Z4B5.6 Z4B6.2 Z4B6.8 Z4B7.5 Z4B8.2 Z4B9.1 Z4B10 Z4B11 Z4B12 Z4B13 Z4B15 Z4B16 Z4B18 Z4B20 Z4B22 Z4B24 Z4B27 Z4B30 Z4B33 Z4B36 Z4B39

MURD310

Abstract: MURD305 MURD315 MURD320 motorola dpak 305
Contextual Info: IMOTOROLA m SEMICONDUCTOR TECHNICAL DATA Switehmode Power MURD305 MuRD3~o MURD345~?’t$ , MURQ~zO ,+,‘Q3 Z? Rectifiers DPAK Surface Mount Package .designed these for use in switching state-of-the-art @ Ultrafast devices 35 Nanosecond @ Low Forward

1N900

Abstract: 1N957A
Contextual Info: ¥ / Diodes 1N900 1N900 Series Series I'M 400mW feWE.? < - K Silicon Epitaxal Planar 400mW Zener Diodes • WB'*}"j $ 0 / Dimensions Unit : mm 1) 15 v 1 y -(:•&% (JEDEC : DO-35)„ 2) mimx'&Zo CATHODE BAND ¿0.5±0.l • Features 1) Glass sealed type (JEDEC : DO35).

Contextual Info: ¿S — K/Diodes 1SR154-100/1SR154-200/1SR154-400 1SRI 54-100/1 SRI 54-200 1SRI 54-400 ->' a * - K Silicon Diffused Junction Rectifying Diodes • yWISVJSel/Dimensions Unit : mm) • & £ 1) 'mmnmz'fzfr’&z 2) (p s m )„ mmmn'&Zo n . CATHODE MARK • Features

Contextual Info: ^ •i — K /D io d e s 1N4001 A/1 N4002A/1N4003A/1N4004A 1N4001A/1 N4002A/1N4003A/ 1N4004A -> < a <* - k Silicon Diffused Junction General Rectifying Diodes • W fi'+j& H l/D im en slo n s Unit : mm) 1) lL T '* S (JEDEC : DO- 41 )o 2) mmmx'&Zo 3) • Features

301L3

Abstract: max4290 FZJ 135
Contextual Info: FZJ SGS-THOMSON * 71 STV9378F VERTICAL DEFLECTION BOOSTER ADVANCE DATA • ■ ■ ■ ■ ■ POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENTT U P TO ZO A pp FLYBACK VOLTAGE UP TO 90V on Pin 5 INTERNAL REFERENCE VOLTAGE EXTERNAL FLYBACK SUPPLY DESCRIPTION

CLA864

Abstract: CLA864A CLA864B CLA864C
Contextual Info: CLAIREX ELECTRONICS 21427^ 11E I> DIV 0G0GÔ40 3 T-HI-%3 CLA864A CLA864B CLA864C A L L LEACH j ZO SOUAflc Transistor Output GENERAL DESCRIPTION — The Clairex CLA864 series of axial lead isolators are designed for those applications where high voltage isolation requirements apply. They consist

Contextual Info: $ *f ^ — 1SR153-200 K /D io d e s 1 S R 1 53-200 §{!] cjq/Under Development v u □ -r * - k Silicon Diffused Junction Glass-Sealed High-Speed Rectifying Diode • T liilS /D im e n sio n s (Unit : mm) 1) "E-VU 2) ^-M-AVr 3) miwmfeT&Zo • Features •HA SO;SHU

RLS245

Contextual Info: RLS245 K /D io d e s RLS245 '> y =1 > I fcf dr '>U < -y ^ > <7 lJ ~ K U ^ * - K Silicon Epitaxial Planar High-Voltage Switching Leadless Diodes • \H i@ /D im e n s io n s U n it: mm 1 ) m m m T'& Zo 2) ( LL -34 )0 • Features 1) High reliability. 2) Small surface mount type (LL-34).

qml-38535

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 89-11-15 M. A. FRYE 92-12-08 M. A. FRYE 09-02-04 R. HEBER Table I: Exclude VIO and VIO / temp from PDA. Guarantee, if not tested, en and in at fO = 100 Hz. Delete subgroups 2 and 3 for IOS. Change ZO to RO

Contextual Info: 0 OPTEK Product Bulletin OPC226 June 1993 GaAIAs Infrared Emitter Chip Type OPC226 .01Z(.30 .OOB(.ZO) «OK. . 01 01 .2 5) : — N-SIDE I I . 0 1 2 .30) . 0 1 0 .25) I I • I ■ ■ ■ AMPHOTERIC | JUNCTION — I- / . 0 0 7 ( .1 8) . 00 51 .1 3) DIMENSIONS ARE

3160-FH

Abstract: LDR1101 2885 light emission diodes LR 3160 LDG5171 S53S E7500 GLB2885 OLB2685 YLB2785
Contextual Info: SIEMENS AKTIEN6ESELL SCHAF M7E D • S23SbDS 002710T b « S I E G SIEM EN S SUPER-RED YELLOW GREEN OLB 2685 YLB 2785 GLB 2885 UGHTBARS Package Dimensions in Inches mm r PiN FUNCTION 80 (ZO 32) MAX. Anode b 1 40 ( 1015 ) (8 89} MAX Canea*t> Gatoder UMIC ArodeS

Contextual Info: $ 1 N4003A K /D io d e s -4 1N 4003A - > =i < * - k w ? t. -t -/ Silicon Diffused Junction Rectifying Diode Glass Sealed Type) • 1) ¿1^7 2) tw it\D £ 0 /D im e n s io n s (Unit : mm) 5o '¡'•WT&Zo 3) S i it f 4) 7 R S t iT '£ > 5 „ • Features

Contextual Info: SKNa 4 Stud Diode Avalanche Diode SKNa 4 7IPQN=1 ?OQB@ S 46 $ I=&T1=2= %&'2+ :3/ 3(,1(2320 3.+/&,13(N H=&T Q=1( 7 4W66 ?O$7 S C $ I01(M 4U6V 8& S WX YHN @DE& C¥4W ZO [ 4566 @DE& C¥45 Symbol Conditions Values Units ?O$7 01(M 4U6V 8& S CX IUXN YH WL5 I]L^N

Contextual Info: K /D iod es RLS245 R LS245 Silicon Epitaxial Planar High-Voltage Switching Leadless Diode • £ f f2 \|-;£ |l/D im e n s io n s U n it: mm) ”1 ) r ^ j l M U T fo & o 2) mmmmz'&Zo 3) JS/J\5U Z $>&0 ^ S y 5l H t 0 ; —•it-AVt 4) • Features 1) High dielectric strength