ZS32 Search Results

ZS32

Contextual Info: Package Diagram Thin Small Outline Packages, Type II 32-Lead TSOP II ZS32 51-85095 1

ZS32

Contextual Info: Package Diagram Thin Small Outline Packages, Type II 32-Lead TSOP II ZS32 1

DS1217

Contextual Info: Formosa MS Chip Zener Diode ZS100 THRU ZS330 List List. 1 Package outline. 2 Features. 2

T600H

Contextual Info: PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID . 0 2 5 SQ. 4 [ ¿ A .1 1 0 /1 4 0 L J x [2 .7 9 /3 .5 6 ] TAB LOCATES TERM. # 3 - 4 -A - SIDE DOT LOCATES TERM #1 _ . 4 9 0 MAX. [1 2 .4 5 ] - * . 9 4 5 MAX. [2 4 .0 0 ] 821 13 . 9 0 6 MAX. [2 3 .0 0 ]

Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: fax id: 1079 CY62148 PRELIMINARY W / C Y P R E S S _ 512Kx 8 Static RAM Features an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. • 4 .5V -5.5V operation • CMOS for optimum speed/power • Low active power

cy7c1019dv

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

32 pin soic 450mil

Abstract: CY62128LL-70SI SOIC 32
Contextual Info: fax id: 1079 W / CYPRESS PRELIMINARY_ CY62148 512 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V-5.5V operation • CMOS for optimum speed/power • Low active power

FAZ-C4 equivalent

Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
Contextual Info: 12/0 Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2004/2005 For Immediate Delivery call KMParts.com at 866 595-9616 Overview 12/1 Miniature circuit-breakers MCB enclosures, fuse enclosures

t600h

Contextual Info: SOLDER SUFFIX CUSTOMER TERMINAL RoHS L E A D P b —FREE S n 1 00% No No S n 1 00% Yes Yes LF3 TERM. N O .’ s FOR REF. ONLY w TAB LOCATES TERM. # 3 - 4 DOT LOCATES TERM #1 -A - . 4 9 0 MAX. _ [1 2 .4 5 ] - .1 1 0 /.1 4 0 y Hd 821 13 . 9 0 6 MAX. [2 3 .0 0 ]

Contextual Info: CY7C1019D PRELIMINARY 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power The CY7C1019D is a high-performance CMOS static RAM

ZS3-08-G

Abstract: ZS3-10-G ZS3-12-G ZS3-14-G ZS3-16-G ZS3-18-G ZS3-20-G ZS3-24-G ZS3-26-G ZS3-30-G
Contextual Info: ZS3 Series 180° TH Socket for PCB Mount Height 4.5mm Specifications Part Number (Details) Voltage Rating: 150V AC Current Rating: 1.5A Operating Temperature Range: –40°C to +105°C ZS3 Withstanding Voltage: - * G * Series No. 500V for 1 minute No. of Contact Pins

CY62148VLL-70ZI

Abstract: CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI
Contextual Info: MoBL ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A 0 through A18).

j004

Contextual Info: DOT LOCATES TERM. #1 .610 ± .015 [1 5.49 ± .38 ] , ELECTRICAL SPECIFICATIONS 25°C u n le ss oth erw ise n oted: - <D© © - .018 X .0 1 0 4 0 [.4 6 X .25] LOT CODE & .0 5 0 (3 8 ) [ 1 -2 7 ] .0 1 8 (4 0 ) [.4 6 ] J .230 MAX. [5 .8 4 ] .004 MIN.

CY62148E

Contextual Info: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V ■ Temperature range: ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C

ZS1R50505

Abstract: ZW32415 ZW30515 ZS1R52405 800-1566 DAS50F24 11.333 DBS200B05
Contextual Info: Cosel U.S.A. DC/DC Converters DAS Series Single Output Ñ 50-100 Watts Modular, Board Mount DBS Series DC/DC Power Modules Designed for High Reliability, High Wattage, Low Profile Applications c Small Size, Multifunction c Wide Range Input DC Voltage: 200-400 VDC, 200~400 VDC

Contextual Info: .5 0 0 MA X . .69 9 MA X . [1 2 .7 0 ] .5 3 0 MAX . [1 3 .4 6 ] g DOT LO CA T ES TERM. LOT C O D E #1 - > & (6?)(6M)\ DATE COD E .6 4 4 [1 6 .3 6 ] PRI G> <10) & <D <D CD- AREA R E P R E S E N T S T E R M IN A L PAD D IM E N S IO N S .0 5 0 (9 ) [1 .2 7 ]

CY62148LL-70SC

Abstract: variable frequency drive circuit diagram CY62148 SOIC 32
Contextual Info: 1CY62148 CY62148 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max. • Low standby power (L version)

Contextual Info: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

Contextual Info: CY7C1019CV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ Pin and Function compatible with CY7C1019BV33 ■

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

Contextual Info: * DIM EN SIO N PART M UST INSERT FULLY TO SU R FA C E A IN R EC O M M EN D ED GRID .021 S Q . 9 [.53] .1 0 0 /1 3 0 * L J [2 .5 4 /3 .3 0 ] MAY BE EXC EED ED WITH SO LDER ONLY c c n kJAV .550 MAX. [13.97] DOT LOCATES TERM. #1 C H A M FER S LOCATE TER M .’s #1

SD7402

Contextual Info: 13 NOTES: U N LE S S 1. M A T E R IA L S : 2. F IN IS H : II 12 O TH ER W ISE I 74671 S P E C IF IED HO U SIN G - L IQ U ID C R Y S T A L P O L Y M E R (L C P ), G L A S S - F IL L E D , U L 9 4 V - 0 . T E R M IN A L S - HIGH P E R F O R M A N C E C O P P E R A L L O Y .

ecn1310

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This