ZUMT5179 Search Results

amplifier 900mhz

Abstract: ZUMT5179 ccb transistor
Contextual Info: SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ZUMT5179 ISSUE 1- NOVEMBER 1998 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMARKING DETAIL - T6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage

Contextual Info: SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 1- NOVEMBER 1998 FEATURES * H igh f T=900M H z M in * M ax capacitance=1pF * L o w noise 4.5dB PARTM ARKING DETAIL -T 6 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT 20 V Collector-Base Voltage

ZUMT5088

Abstract: ZUMT5179
Contextual Info: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZUMT5088 ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T20 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current

RF 450

Contextual Info: Section S: Bipolar Transistors NPN RF T r a n s is to r s The transistors listed in the fo llo w in g tables are designed fo r small signal am plification from RF to VHF/UHF frequencies. Typical applications areas include RF security systems Autom otive and Domestic , crystal oscillators, FM

Contextual Info: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e