ZVN01 Search Results

ZVN0106A

Abstract: ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B
Contextual Info: « » W ¡2 » « EH a > o ® > 8 9 P18 ! ZVN3206L 14A, 0.150 8 I I i ! ZVN3306A I0S17O VN'OLI 0.27A, 50 ZVN1306A 0.2A, 100 8 ZVP0108B 0.6A, 80 ZVP1308B 0.25A, 200 ZVP0108A 0.23A. 8 0 ZVP1308A 0.14A, 200 ZVN0108L 1.5A, 4 0 ZVN1308B 0.5A. 100 ZVP2208B 1.5A, 1 6 0

DEVICE MARKING ZVN

Abstract: BSS138S 2N7001
Contextual Info: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT

DS200

Abstract: ZVN0120A ZVN0124A DSA003781
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible REFER TO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

ZVN0124A

Abstract: DSA003781 ZVN0124
Contextual Info: ZVN0124A ID on -On -State Drain Current (Amps) ID(ON) On State Drain Current(Amps) TYPICAL CHARACTERISTICS 2.0 1.8 80µs pulse VGS=10V 8V 6V 5V 1.6 1.4 1.2 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 20 40 60 80 100 1.0 VGS=10V 7V 5V 0.8 4V 14 ID= 1A 12 10 8 6 4 500mA 2

ZVN0117TA

Abstract: t50c
Contextual Info: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

fet to92

Abstract: ZVN0117TA
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 170 V Continuous Drain Current at Tamb=25°C

DS200

Contextual Info: N-CHANNEL ENHANCEM ENT MODE VERTICAL DM OS FET ZVN0120A ISSUE 2 - MARCH 94 FEATU RES * 200 Volt V DS * R,DS on = 16f l APPLICATIONS * Telephone handsels REFERTO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAM ETER VALUE UNIT V ds 200 V C o n tin u o u s Drain C u rre n t at T arnb=25°C

ZVN2120A

Contextual Info: Obsolete. Alternative is ZVN0124A. ZVN2120A ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 1.6 1.2 5V 0.8 4V 0.4 3V 2V 10 20 30 40 50 1.4 1.2 VGS= 10V 0.8 0.4 2V 4 0.5A 0.1A 6 8 10 ID(On)-On-State Drain Current (Amps)

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN0124A ISSUE 1 – M ARCH 94 FEATURES * 240 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IS S U E 2 -M ARCH 94_ FEATURES * 200 Volt VDS * R DS on = 1 6 ii APPLICATIONS * Telephone handsets REFER TO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

zvn zetex

Contextual Info: bQE J> m TTTGSTö 0 0 0 7 7 B3 ZETEX N-channel enhancement­ mode vertical DMOS FET 7 Mb SEMICONDUCTORS ZVN 0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Siemens F75-54

Contextual Info: b OE D • ^70576 N-channel enhancement mode vertical DMOS FET ZETEX 0007775 fc.7T ■ Z E T B ' SEMICONDUCTORS ZVN 0117TA FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - MARCH 94_ FEATURES * 240 Volt VDS * ^DS on = 1 6 fl APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V V DS 240 Continuous Drain Current at Tamp25°C

ZVN0545G

Abstract: ZVN3320A ZVN3320F ZVN0120A ZVN0545A ZVN253 bs107p ZVN0545 ZVN2535A e-line
Contextual Info: Section 3: MOSFETs N-Channel Devices BVdss from 3 00 V to 450V Typical application areas for this range of devices include Power Supplies, Converters, Telecom Switches, M otor Control and High Voltage Driver circuits Part No. •d B V D SS V GS th •d m