ZXMP6A Search Results

ZXMP6A13FTA

Abstract: ZXMP6A13FT ZXMP6A13F
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications

ZXMP6A16K

Abstract: 6A16 TS16949 ZXMP6A16KTC
Contextual Info: ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.085 @ VGS= -10V 8.2 0.125 @ VGS= -4.5V 6.75 V(BR)DSS -60 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

Contextual Info: ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

ZXMP 6A17

Contextual Info: ZXMP6A17G Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed • Low Gate Drive 125mΩ @ VGS= -10V -4.3A • Low Input Capacitance -3.5A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: ZXMP6A17GQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed  Low Gate Drive 125mΩ @ VGS= -10V -4.3A  Low Input Capacitance -3.5A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max TA = +25°C (Note 7) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V -2.4 A -60V Description This MOSFET has been designed to minimize the on-state resistance

ZXMP6A17N8

Abstract: 6A17
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17N8 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 125mΩ @ VGS = -10V -3.4A 190mΩ @ VGS = -4.5V -2.8A -60V Fast switching speed

Contextual Info: ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V BR DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,

ZXMP 6A17

Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS RDS(on) ID TA = 25°C 125mΩ @ VGS= -10V -6.6A 190mΩ @ VGS= -4.5V -5.3A • Low on-resistance • Fast switching speed •

Contextual Info: ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary V BR DSS -60 RDS(on) (⍀) ID (A) 0.085 @ VGS= -10V 8.2 0.125 @ VGS= -4.5V 6.75 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

ZXMP6A13F

Abstract: ZXMP6A13FTA ZXMP6A13FTC
Contextual Info: ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

ZXMP6A16KTC

Abstract: 6A16 TS16949 ZXMP6A16K
Contextual Info: ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.085 @ VGS= -10V 8.2 0.125 @ VGS= -4.5V 6.75 V(BR)DSS -60 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast

6A17

Abstract: ZXMP6A17E6 ZXMP6A17E6TA
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max V BR DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V

6A17

Abstract: ZXMP 6A17 ZXMP6A17G ZXMP6A17GTA ZXMP
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Fast switching speed • Low gate drive • Low input capacitance 125mΩ @ VGS= -10V

Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max TA = 25C (Note 7) -60V 125m @ VGS = -10V -3.0 A 190m @ VGS = -4.5V -2.4 A

6A13

Abstract: TS16949 ZXMP6A13G ZXMP6A13GTA ZXMP6A13GTC
Contextual Info: ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.390 : ID = -2.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

831 SO8 MARKING

Abstract: ZXMP6A16DN8 ZXMP6A16DN8TA ZXMP6A16DN8TC
Contextual Info: ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

ZXMP 6A17

Abstract: 6A17 nc marking zxmp6a17
Contextual Info: ZXMP6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.125 : ID = -4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

ZXMP 6A17

Abstract: 6A17 ZXMP6A17GTA ZXMP6A17GTC ZXMP6A17G
Contextual Info: ZXMP6A17G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.125 : ID = -4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

6a17

Abstract: ZXMP6A17E6TA DS33589 DS335 zxmp6a17
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max V BR DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V

6a17

Abstract: Diodes Incorporated 17-33 ZXMP 6A17 ZXMP6A17KTC ZXMP6A17K J-STD-020D ZXMP LINEAR MARKING date code
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C 125mΩ @ VGS= -10V -6.6A 190mΩ @ VGS= -4.5V

ZXMP

Contextual Info: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications

6A18

Abstract: ZXMP6A18K ZXMP6A18KTC
Contextual Info: ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V BR DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,

831 SO8 MARKING

Contextual Info: A Product Line of Diodes Incorporated ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Max Features Package ID TA = +25°C (Notes 4 & 6) -3.9A 85mΩ @ VGS = -10V SO-8 -60V -3.2A 125mΩ @ VGS = -4.5V • • • • •