ZXMP6A17E6TA Search Results

Contextual Info: ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

6A17

Abstract: ZXMP6A17E6 ZXMP6A17E6TA
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max V BR DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V

Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max TA = 25C (Note 7) -60V 125m @ VGS = -10V -3.0 A 190m @ VGS = -4.5V -2.4 A

ASD103

Contextual Info: DATE: 9th April, 2014 PCN #: 2140 PCN Title: Leadframe material change for SOT-25, SOT-26 and TSOT25 packages Dear Customer: This is an announcement of change s to products that are currently being

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

BAT54CTA

Abstract: BZT52C3V9LP DCX124EK DCX68 DCX69 DDTB123YC MMDTA06
Contextual Info: DATE: 7th November, 2013 PCN #: 2113 – Rev01 PCN Title: Conversion to Copper Bond Wire and Qualification of Additional Wafer Source on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

6a17

Abstract: ZXMP6A17E6TA DS33589 DS335 zxmp6a17
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID Max V BR DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A 190mΩ @ VGS = -4.5V

6a17 sot23-6

Abstract: 6A17 ZXMP6A17E6 ZXMP6A17E6TA ZXMP6A17E6TC
Contextual Info: ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

AEC-Q101

Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
Contextual Info: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC

Contextual Info: A Product Line of Diodes Incorporated ZXMP6A17E6 ADV AN CE I N FORM AT I ON 60V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID Max V BR DSS RDS(on) Max TA = 25°C (Note 5) 125mΩ @ VGS = -10V -3.0 A

MARKING 327 sot23-6

Abstract: ZXMP6A17E6 ZXMP6A17E6TA ZXMP6A17E6TC 327 SOT23-6
Contextual Info: ZXMP6A17E6 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes