ZXT13N50DE6TC Search Results

n50d

Abstract: marking n50d
Contextual Info: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current ICM = 10A Peak Pulse Current

Contextual Info: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

n50d

Abstract: ZXT13N50DE6 ZXT13N50DE6TA ZXT13N50DE6TC DSA0037462
Contextual Info: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • BVCEO > 50V  Case: SOT26  IC = 4A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)