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DSA0064758.pdf
by Cree
Partial File Text
PRELIMINARY CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree's CGH2112
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0F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high eff
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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ATC600F
atc600s
CGH2112
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Linearizer
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oz 9939
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