DSA00428645.pdf by Toshiba

Partial File Text 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = -100 V · Low collector-emitter saturation vol
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2SB1016A 2SD1407A B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type

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