Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img IRF530NPBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    IRF530NPBF datasheet preview

    IRF530NPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF530NPBF is -55°C to 175°C.
    • Yes, the IRF530NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
    • To ensure proper thermal management, use a heat sink with a thermal resistance of 1°C/W or lower, and apply a thermal interface material (TIM) with a thermal conductivity of 5 W/m-K or higher.
    • The recommended gate drive voltage for the IRF530NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • No, the IRF530NPBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics, which are optimized for switching applications.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel