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DSAIH00084666.pdf
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D A x ia l Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S t
Type
Scan
ECAD Model
Alternative Parts
1N5818
SR130H03-3
SR130H08
SB130
VS-1N5818TR
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1N5819a