1N5819A Search Results
1N5819A Price and Stock
Micro Commercial Components 1N5819-APDIODE SCHOTTKY 40V 1A DO41 |
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1N5819-AP | Bulk | 50,000 |
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1N5819-AP |
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Diodes Incorporated 1N5819A-01DIODE SCHOTTKY DO41 |
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1N5819A-01 | Bulk |
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Diodes Incorporated 1N5819-A52Diode Schottky 40V 1A 2-Pin DO-41 Ammo Pack - Ammo Pack (Alt: 1N5819-A52) |
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1N5819-A52 | Ammo Pack | 111 Weeks | 3,000 |
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1N5819-A52 |
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Taiwan Semiconductor 1N5819 A0G- Tape and Reel (Alt: 1N5819 A0G) |
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1N5819 A0G | Reel | 12 Weeks | 6,000 |
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1N5819 A0G | 11,536 |
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1N5819 A0G | 3,000 |
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PanJit Semiconductor 1N5819_AY_100A4Schottky Diodes & Rectifiers 40V Schottky 1A |
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1N5819_AY_100A4 |
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1N5819_AY_100A4 | 2,500 |
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1N5819A Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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1N5819 A0G |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 1A DO204AL | Original | |||
1N5819AMO | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
1N5819-AP |
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Interface | Original |
1N5819A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N5819aContextual Info: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal, |
OCR Scan |
1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a | |
Contextual Info: Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Voltage: 20 to 40 V Current: 1.0 A RoHS Device DO-41 Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. 0.034 0.90 DIA. 0.028(0.70) -Low forward voltage drop. 1.000(25.40) Min. |
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1N5817-G 1N5819-G DO-41 DO-41 Ch1N5818T-G 1N5819T-G 1N5817A-G 1N5818A-G 1N5819A-G 1N5817B-G | |
1N5817 SPICE
Abstract: 1N5819a 1n5818b
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1N5817 1N5818 1N5819 DO-41 J-STD-020C MIL-STD-202, 1N5817-A 1N5817-B 1N5817 SPICE 1N5819a 1n5818b | |
Contextual Info: Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device DO-41 Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. 1.000 25.40 Min. 0.034(0.90) |
Original |
1N5817-G 1N5819-G DO-41 DO-41 1N5818T-G 1N5819T-G 1N5817A-G 1N5818A-G 1N5819A-G 1N5817B-G |