"P-CHANNEL JFET" SEMICONDUCTOR Search Results
"P-CHANNEL JFET" SEMICONDUCTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
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SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
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SCC433T-K03-10 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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"P-CHANNEL JFET" SEMICONDUCTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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"P-Channel JFET"
Abstract: SHD231009 "P-Channel JFET" semiconductor p jfet
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SHD231009 "P-Channel JFET" SHD231009 "P-Channel JFET" semiconductor p jfet | |
Contextual Info: LS846 N-CHANNEL JFET Linear Systems Low Leakage Low Noise JFET The LS846 is a high-performance JFET featuring extremely low noise and low leakage and is targeted for use in a wide range of precision instrumentation applications. The 8 Pin P-DIP and 8 Pin SOIC provide ease of |
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LS846 | |
SOT-23 marking 12F
Abstract: 2000E7
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OCR Scan |
MMBF5460LT1/D MMBF5460LT1 OT-23 O-236AB) SOT-23 marking 12F 2000E7 | |
MMBFJ177LT1Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document byMMBFJ177LT1/D DATA I o JFET Chopper P-Channel — Depletion 2 SOURCE MMBFJ177LTI I A G:TE+ Y ~.,l~~+i ;.:,’ ‘ *., *b,. .,.K.:\’:~ 1 DRAIN ! .:.\.> Rating Voltage Reverse Gat*Source Voltage Symbol |
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byMMBFJ177LT1/D MMBFJ177LTI OT-23 O-236AB) 14WI-2447 2W29298 MMBFJ177LT1/D MMBFJ177LT1 | |
6x marking sot-23 p-channel
Abstract: 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET CMPFJ174 P-Channel JFET Amplifier marking code ny CMPFJ175 CMPFJ176
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OCR Scan |
CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 OT-23 6x marking sot-23 p-channel 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET P-Channel JFET Amplifier marking code ny | |
Contextual Info: 2N5114 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C |
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2N5114 2N5114, 2N5115, 2N5116 500mW -50mA 25-year-old, 2N5114 | |
MMBF5486LT1
Abstract: 318C8 marking gfg 6f
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OCR Scan |
MMBF5486LT1/D MMBF5486LT1 OT-23 O-236AB) MMBF5486LT1 318C8 marking gfg 6f | |
Contextual Info: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85Ω LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures |
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J/SST174 OT-23 350mW -50mA 25-year-old, SST174 | |
Contextual Info: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75Ω LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature |
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2N5114 2N5114, 2N5115, 2N5116 500mW -50mA 2N5114 25-year-old, LS5114 | |
2n5114Contextual Info: 2N5114 SERIES SINGLE P-CHANNEL JFET FEATURES REPLACEMENT FOR SILICONIX 2N5114, 2N5115, 2N5116 75 LOW ON RESISTANCE LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to 150°C Junction Operating Temperature |
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2N5114 2N5114, 2N5115, 2N5116 500mW -50mA 2N5114 25-year-old, LS5114 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P-Channel — Depletion 2SOURCE M MBFJ177LT1 MAXIMUM RATINGS Rating Symbol Value Unit Vd G 25 Vdc v GS r -2 5 Vdc Symbol Max Unit Total Device Dissipation FR-5 BoardO) Ta = 25-C Derate above 25°C PD 225 |
OCR Scan |
MBFJ177LT1 OT-23 O-236AB) MMBFJ177LT1 15Vdc, 15Vdc) | |
2N5018Contextual Info: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE TO-18 TOP VIEW 75Ω LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 S Maximum Temperatures Storage Temperature -55 to 150°C |
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2N5018 2N5018 500mW -10mA 25-year-old, | |
6W MARKING CODE SOT23
Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
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MMBFJ175LT1 OT-23 O-236) MMBFJ175LT1/D 6W MARKING CODE SOT23 MMBFJ175LT1 MMBFJ175LT1G 6w sot23 | |
UNION CARBIDEContextual Info: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE 75Ω LOW ON RESISTANCE TO-18 TOP VIEW RATINGS1 ABSOLUTE MAXIMUM @ 25 °C unless otherwise stated S Maximum Temperatures Storage Temperature -55 to 150°C |
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2N5018 2N5018 500mW -10mA 25-year-old, UNION CARBIDE | |
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"P-Channel JFETs"
Abstract: 2N5116
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OCR Scan |
tSD113D T-39-01 "P-Channel JFETs" 2N5116 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFÜ175LT1 P-Channel — Depletion Motorola Preferred Device 2 SOURCE % 1 DRAIN 2 MAXIMUM RATINGS Rating D ra in -G a te Voltage Reverse G a te -S o u rce Voltage Symbol Value Unit VDG 25 V VGS r -2 5 V |
OCR Scan |
175LT1 OT-23 236AB) MMBFJ175LT1 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET C h o p p e r T ra n sisto r N-Channel — Depletion M AXIMUM RATINGS Rating D ra in -G a te Voltage G a te -S o u rce Voltage Symbol Value Unit VDG -3 5 Vdc VGS -3 5 Vdc Gate Current 'g 50 mAdc Total Device Dissipation @ Ta = 253C |
OCR Scan |
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PF5301Contextual Info: JFET Transistors NATL INational Semiconductor N-Channel JFETs Caso Style 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A •gss p F @ V dg Max (V) Vp ■d s s (fiA @V |jS) VDS ■d (V) Min Max (V) (nA) Min Max (V) @ Gf» (fim ho) @Vqs Min Max (V) TO-72 TO-72 |
OCR Scan |
2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A NF5301 NF5301-1 NF5301-2 NF5301-3 PF5301 | |
ls841Contextual Info: LINEAR SYSTEMS LS840 LS841 LS842 J.OW NOISE LOW DRIFT LOW CAPACITANCE MONOUTHIC DUAL N-CHANNEL JFET Linear Integrateci Systems FEATURES LOW NOISE en=8n V /H zT Y P . LOW LEAKAGE iQ = 10pATYP. LOW DRIFT 1V GS1-2 7 Tl= 5MV/°C max. LOW OFFSET VOLTAGE IV G s i. 2 l = 2 m V T Y P - |
OCR Scan |
10pATYP. LS840 LS841 LS842 400mW 200pA 200pA 100Hz | |
Contextual Info: IH401A HARRIS S E M I C O N D U C T O R QUAD Varafet Analog Switch October 1997 Features Description • rDS ON (Ty P ) . 35i2 The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET. |
OCR Scan |
IH401A IH401A 2N4391, 1-800-4-HARRIS | |
"P-Channel JFET"
Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"
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OCR Scan |
CMPF5460 CMPF5461 CMPF5462 OT-23 100Hz "P-Channel JFET" CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz" | |
2N5460
Abstract: 2n5462 2N5461
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OCR Scan |
2N5k62 to-92 2N5460 2N5h60 2N5461 100Hzl 100Hz 2n5462 2N5461 | |
Contextual Info: JFET Transistors National J2fl Semiconductor P-Channel JFETs in m Switches BVgsS BVgdo V @ Ig Min (juA) Igss (nA) @VDG Max (V) >D(off) (nA) @ Vds Max (V) 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 30 30 30 30 30 1 1 1 1 1 2 2 0.5 0.5 |
OCR Scan |
2N5018 2N5019 2N5114 2N5115 2N5116 P1086 P1087 | |
2N5458 NATIONAL SEMICONDUCTOR
Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
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OCR Scan |
b501130 003THTfl 2N3684 2N3686 2N3822 PN4303 2N4338 T0-18 2N4339 2N5458 NATIONAL SEMICONDUCTOR to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET |