0/TAA 785 A IC Search Results

Contextual Info: DRAM MODULE 16 Mega Byte KMM5334100A/AG Fast Page Mode 4M x33 DRAM SIM M , 2K Refresh , 5V x / Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5334100A is a 4M bit x 33 Dynamic RAM high density memory module. The Samsung KMM5334100A consists of eight CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM53341OOAKV/AKVG Fast Page Mode 4Mx33 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5334100AKV is a 4M bit x 33 Dynamic RAM high density memory module. The

TAA 785 A IC

Contextual Info: The M S M 5117400 is a 16 M eg ab it d y n am ic m em ory o rgan ized a s 4 ,1 9 4 ,3 0 4 w o rd b y 4 b it. T h e tech n ology used to fab ric ate the M S M 5 1 1 7 4 0 0 is O K I's C M O S silicon ga te p ro c e ss tech n ology . T h e device o p erates at a single + 5 V p ow er su p p ly . A ll in pu ts an d o u tp u ts are T T L co m p atib le.

1710070

Contextual Info: O K I Semiconductor MSM51 V17100 16 Meg x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51V17100 is a 16 M egabit dynam ic m emory organized a s 16,777,216 w ord by 1 bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A32 SERIES 4M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-424000A32 series is a 4 194 304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 are assembled.

TAA 785 A IC

Abstract: IC TTL 4700 82S181 Signetics 82s181 0/TAA 785 A IC
Contextual Info: Signetics 82S181 8K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The 82S181 is supplied with all outputs at a

Contextual Info: GMM7732140CNSG-6/7 LG S e m i c o n C o .,L td . 2,097,152 W O RD S x 72 BIT CMOS DYNAMIC RAM MODULE Description The G M M 7732140C N SG is a 2M x 72 bits D ynam ic RAM M ODULE w hich is assem bled 9 pieces o f 2M x 8bit EDO D R A M s in 28pin SOJ package, one 20bit

M7732

Contextual Info: GMM7732140CNSG-6/7 LG Semicon Co.,Ltd. 2,097,152 W O RD S x 72 B IT CMOS DYNAMIC RAM MODULE Description The G M M 7732140C N S G is a 2M x 72 bits D ynam ic RA M M ODULE w hich is assem bled 9 pieces o f 2M x Sbit E D O D R A M s in 28pin SO J package, one 20bit

MSM514260E-60J3

Abstract: OKI PACKAGE INFORMATION PB
Contextual Info: Semiconductor This version:Aug.2000 MSM514260E 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260E is a 262,144-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki

km44v4000a

Contextual Info: KM44V4000A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4 V 4 0 0 0 A /A L /A L L /A S L is a h ig h s p e e d C M O S 4 ,1 9 4 ,3 0 4 b it x 4 D y n a m ic R a n d o m • P e rfo rm a n c e range:

U09A

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A32 SERIES 4M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The M C -424000A 32 series is a 4 194 304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 are assembled.

MS52C182A

Contextual Info: ¡ Semiconductor MS52C182A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit One Time PROM DESCRIPTION The MS52C182A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable

MS52C1161A

Abstract: MS52C181A
Contextual Info: ¡ Semiconductor MS52C181A 1998.6 Preliminary 131,072-Word X 8-Bit STATIC RAM + 1,048,576-Word X 8-Bit One Time PROM DESCRIPTION The MS52C181A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 1,048,576-word by 8-bit electrically switchable 8Mb One Time PROM featuring 2.7V to 3.6V

MS52C1161A

Abstract: FBGA48P
Contextual Info: ¡ Semiconductor MS52C1161A 1998.6 Preliminary 131,072-Word X 8-Bit STATIC RAM + 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1161A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 2,097,152-word by 8-bit electrically switchable 16Mb One Time PROM featuring 2.7V to 3.6V

51V17400

Contextual Info: O K I Semiconductor MSM51V17400 4 Meg x 4-Blt DYNAMIC RAM DESCRIPTION The MSM51V7400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V7400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL

Contextual Info: O K I Semiconductor MSM51V16400 4 Meg x 4-Bit DYNAMIC RAM DESCRIPTION The MSM51V16400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL

NEC 4217400-60

Abstract: d4217400g3 nec 4216400 nec 4217400 D4217400G3-50-7JD D4217400G3-60-7JD
Contextual Info: DATA SHEET NEC / M O S INTEGRATED CIRCUIT _ /^P P 42 S 16400,4216400,42S17400,4217400 16 M -BIT D Y N A M IC R A M 4 M -W O R D B Y 4-BIT, FA ST P A G E M O D E Description The fiPD42S164Q0, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CMOS dynamic RAMs. The

B56A

Contextual Info: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56A49 is a 4M x 9 dynam ic RAM m odule, m ount­ ed 9 pieces o f 4 M bit D RAM H M 514100AS, H M 514100JP sealed in an SOJ package. An outline o f th e H B56A49 is the

Contextual Info: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hm514100as

Abstract: gbr7 HB56A49A8 HM514100a
Contextual Info: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A49 is a 4M x 9 dynamic RAM module, mount­ ed 9 pieces of 4 Mbit DRAM HM514100AS, HM514100JP sealed in an SOJ package. An outline of the HB56A49 is the

Contextual Info: Preliminary KM68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

4217400-60

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ///PD42S16400,4216400,42S17400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e / I P D 4 2 S 1 6 4 0 0 , 4 2 1 6 4 0 0 , 4 2 S 1 7 4 0 0 , 4 2 1 7 4 0 0 a re 4 ,1 9 4 ,3 0 4 w o rd s b y 4 bits C M O S d y n a m ic R A M s . T h e