MSM51V16400 Search Results

MSM51V16400A

Contextual Info: O K I Semiconductor MSM51 V16400 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is

MSM51V16160F

Abstract: MSM51V16400 MSM51V16400F
Contextual Info: FEDD51V16400F-01 Issue Date: Sep. 29, 2003 OKI Semiconductor MSM51V16400F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and

Contextual Info: E2G0122-17-61 O K I Semiconductor Thisversion:^ 1998 MSM51V16400D/DSL_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,

MSM51V16400D

Contextual Info: Pr E2G0122-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,

msm51v16400b

Contextual Info: ¡ Semiconductor MSM51V16400B/BSL ¡ Semiconductor MSM51V16400B/BSL E2G0067-17-41 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400B/BSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400B/BSL achieves high integration, high-speed operation, and

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

Contextual Info: O K I Semiconductor M SM 51V16400A_ 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V16400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is

MSM51V16400

Contextual Info: J2G0122-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V16400D/DSL l 暫定 MSM51V16400D/DSL 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16400D/DSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ

MSM51V16400DSL

Contextual Info: Pr E2G0122-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,

Contextual Info: O K I Semiconductor MSM5 I V I 6400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.

Contextual Info: J2G0067-17-41 作成：1998年 1月 MSM51V16400B/BSL l 前回作成：1997年 5月 ¡ 電子デバイス MSM51V16400B/BSL 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16400B/BSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ

Contextual Info: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.

MSM51V16400A

Contextual Info: O K I Semiconductor MSM51 V16400 A_ 4,194,304-Word x 4-Bit DYNAMIC R AM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16400A is a 4494,304-w ord x 4-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, a n d lowpo w er consum ption d u e to q u ad ru p le polysilicon double m etal CMOS. The MSM51V16400A is

MSM51V16400

Contextual Info: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a n e w generation dynam ic organized as 4,194,304-w o rd x 4-bit. The technology used to fabricate the MSM51V16400 is O K I's C M O S silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V16400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is

MSM51V16400

Contextual Info: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V16400 4 Meg x 4-Bit DYNAMIC RAM DESCRIPTION The MSM51V16400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

MSM51V16400DSL

Abstract: msm51v16400d
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE