00071 Search Results

Contextual Info: 9 0 9 7 2 5 0 T O S H IB A d F JiG ^E S O ~SÍ T O S H I B A { D I S C R E T E / O P T 0> ”5b"C 0 7 65 4 C D IS C R E T E /O P T O 00071=54 a ' Ü T - 3 3-0<? SILICON NPN TRIPLE DIFFUSED TYPE IN D U S T R IA L A P P L IC A T IO N S U n i t i n mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING

7136a

Abstract: 4049 BP ICL7126* teledyne hamlin 3902 TC7136CPL ph meter circuit tc 4049 BP
Contextual Info: TELEDYNE 3bE D COMPONENTS • & ^ l 7 h 0 2 0007120 7 « T S C - t * 5 m O - o 5 WTELEDYNE COMPONENTS TC 7136 TC 7136A LOW POWER, 3-1/2 DIGIT ANALOG-TO-DIGITAL CONVERTERS FEA TUR ES T Y P IC A L A P P U C A T IO N S ■ ■ Thermometry ■ Bridge Readouts

MA161

Abstract: umh13
Contextual Info: PANASONIC INDL/ELEK -CIO 75 69 329 52 PANA SON IC . . , >. i , . . f „ k. . _ P E I 1^35555 0007156 7 72C 07 158 IN O L «. E LE CTR ON IC ._ . . . . . . , aJ*t«.*atjfc»*W i'Ci4ifV*siat«?MS*-' LS TTL DN74LS&#39;>U-X D DN74LS243/DN74LS243S T- DN74LS243/DN74LS243S

ECG2322

Abstract: s34 zener diode diode t48 s34 diode philips ECG2328 philips ECG2329 ECG2328 ECG2331 ECG zener diode 2 Amp zener diode
Contextual Info: PHILIPS E C G INC SHE D Transistors c o n rd j ECG Type Description and Application • bbSB^fi 000715^ S34 « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b o BV c e o

Contextual Info: TOSHIBA { DIS CR ET E/ OPT O} 9097250 TOSHIBA ~5t DÎ^jTOTTSSD 0007170 1 |"~ 5òc 07970 DISCRETE/OPTO o r - 3 a-)3 2SD1430 SILICON NPNTRIPLE DIFFUSED M ESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 Z . 6 ± O .2 la O M A X . FEATURES: . High Voltage : V q b o =^500V

Contextual Info: BROOKTREE CORP b3E I m imss^s 00071Ö4 007 H B R K Interface Specification IS -910.02 PRELIMINARY B id irectio n a l C ell FIF O P a r t # U G A -9 1 0 A p ril, 1993 Brooktree Brooktree Corporation 9950 Barnes Canyon Road San Diego, CA 92121 USA 6 1 9 -4 5 2 -7 5 8 0

D0205AB

Abstract: D0-205AB
Contextual Info: 4855452 INTERNATIONAL RECTIFIER IO R in t e r n a t i o n a l 73 73C 07174 D T"-*/-2-3 Data Sheet No. PD-2.136 r e c t if ie r D E | 4 f l 5 S 4 S e 0007174 T R23D & R23DR SERIES 1400 - 800 VOLTS RANGE 315 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES

Contextual Info: 3ßE 3> INTEGRATED DEVICE • 4Ö25771 0007131 1 ■ IDT ■ n- 16K x 32 CMOS STATIC RAM MODULE W & -2 .3 -IM IDT7MC4032 Integrated D evice T ech n o logy, Inc. FEATURES: DESCRIPTION: • The ID T 7 M C 4 0 3 2 is a 16K x 3 2 static RA M module with separate I/O constructed on a co-fired ceram ic substrate using

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage

Contextual Info: RF3106 Proposed
              • 3V CDMA US-PCS Handsets • Spread-Spectrum Systems VCC1 Si CMOS 1 2 7 GND 4 RF OUT 5 VCC2
       Rev A0 000719 0.100 6.0 sq    4.390 2.500 0.600 Dimensions in mm.

TR3 Marking

Abstract: KSR1101 KSR2101
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D J 7*^41*12 0007111 £ KSR2101 PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T -2 3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7Kfl, R,=4.7K!)

KSR1112

Abstract: KSR2112
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSR2112 14E D J 7^4:142 0007135 f l j PNP EPITAXIAL SILICON TRANSÌSTOR T - 3 7 - IB SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, inverter, Interface circuit Driver circuit • Biiilt in bias Resistor (R-47KQ)

1C10

Abstract: KSR1205 KSR2205 1c10 TRANSISTOR
Contextual Info: SAMSUNG S E M I C O N DU C T O R INC KSR2205 IME O | 00071*43 S | PNP EPITAXIAL SILICON TRANSÌSTOR T -3 1 - »3 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R.-4.7KO, Ri=10K<l)

KSR1211

Abstract: KSR2211
Contextual Info: SA M S U N G SE MIC OND UC TOR INC IME O 1 0007155. *ì | KSR2211 PNP EPITAXIAL SIU C O N TRANSISTOR SW ITCHING APPLICATION Bias Resistor Built In T - 37- |3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R = 22 Kfl)

Contextual Info: 2403 260 00071 SPEAKER-1318-2.5-SC-GRAND The 13x18x2.5 mm Grand speaker provides maximum space efficiency and audio performance in small, slim consumer devices, such as mobile handsets or smartphones. The extremely flat speaker has the same space consumption compared to conventional

Contextual Info: I IME D I ^SAMSUNG S E M ICON DUC TOR INC KSR2203 I 000713*1 0 PNP EPITAXIAL SILICON TRANSISTOR - CT=37- >3 SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R =22K0, R1=22Kfl)

Contextual Info: PANASONIC INDL/ELEK -CIO 75 ]>F| 1^32052 0007115 2 f 6932652 PANASONIC INDLtELECTRONIC L S T T L 72C 07195 D VYf-Gl DN74LS261 /DN74LS261S D N 7 4 L S '> U - X D N 7 4 L S 2 6 1 D N 7 4 L S 2 6 1S 2 -b it-B y -4 -b it P arallel Binary M ultipliers • ft m

SLR-54

Abstract: PG-2000 slr-331 SLR-38 ROHM SLR-54
Contextual Info: 7 f l 2 f l ci ‘i ‘ï S LED Indicator Lamps ROHM CO 00071m 137 IRHP1 LTD 5bE •LED Lamps, Two-Color LEDs ^ H I -£ \ Wide range of product type including reflective lamp, block type and in various shape. The applications include pilot, bar display, flat illumination display, backlight, etc.

358 IC

Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
Contextual Info: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product

ECG Cross Reference

Abstract: transistor ECG128 Philips ECG 152 ECG159 transistor ECG159 ECG2355 NPN pnp MATCHED PAIRS ECG289A ECG184 cross reference ECG157
Contextual Info: PHILIPS E C G INC 54E D Transistors cont'd ECG Type Description and Application • ^53^20 00071b2 OBT « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BVc b o BV c e O

Contextual Info: INTERNATIONAL RECTIFIER IO R 73 De | m ö 5S452 0007151 0 I Data Sheet No. PD-3.171 in t e r n a t io n a l , r e c t if ie r S52KF SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 10 fjs 2060 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs VOLTAGE RATINGS

p1aa

Contextual Info: INTEGRATED DEVICE 3ÔE D • 4A2S771 0007174 Ô ■ IDT _ "T- Hfc-2.2-11 2 X 4K x 60 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 MULTIPROCESSOR _ PRELIM INARY IDT7MB6064 FEATURES: DESCRIPTION: • High-speed CEMOS static RAM module constructed

Contextual Info: SJ111859 4x 0.1 M S A CN NO. 変 更 内 容 DESCRIPTION 製 図 DR. 担 当 CHK. 査 閲 APPD. 承 認 APPD. 2 01/NOV/2011 000719 ADDED ITEM ― K.NAKATA T.NISHIMURA H.OBIKANE 3 08/AUG/2012 003622 ADDED ITEM

d 331 TRANSISTOR equivalent

Abstract: C 3311 transistor la 4142 74143
Contextual Info: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)