BLF18 Search Results

BLF188XR NXP

Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

BLF188XR NXP

Abstract: blf188
Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

LDMOS 15w

Abstract: BLF1043 EQUIVALENT BLF861 BLF861A BLF1822-10 BLF2045 09nH
Contextual Info: Philips Semiconductors LDMOS Broadcast Drivers Equivalent Circuits • BLF1043, BLF1822-10 and BLF2045 are LDMOS transistors which can be used in Band IV/V applications in conjunction with BLF861A • To support the use of these drivers in Band IV/V, equivalent in- and output circuits are shown

BLF188XR

Abstract: blf188 BLF188XR NXP BLF18
Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

smd transistor marking C14

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 PINNING FEATURES

BLF1820-90

Abstract: Power UHF amplifiers 432 MHz 1800 ldmos 2222-581 MGT005
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES

smd transistor 581

Abstract: 2222-581 BLF1822-10 TEKELEC 302
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V

DCS foxboro

Abstract: transistor 2n2222 Philips Electrolytic Capacitor 2200uf gsm signal amplifier NPN transistor 2n2222 C5 MARKING TRANSISTOR gsm circuit diagram philips Trimmers transistor 2N2222 PHILIPS TRANSISTOR 2n2222 p1
Contextual Info: Application Note Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications AN10229_1 Philips Semiconductors TPAN02_02W97 Philips Semiconductors Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications Application Note

smd transistor 581

Abstract: 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 16 2002 Mar 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • Designed for broadband operation HF to 2.2 GHz

Philips Capacitor

Abstract: smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V

BLF1820-40

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF1820-40 UHF power LDMOS transistor Preliminary specification 2001 Aug 10 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1820-40 PINNING FEATURES • High power gain PIN DESCRIPTION

VDMOS

Abstract: BLF574 BLF647 BLF878 220v to 12v inverters circuit diagrams BLF278 NXP blf368 BLF861 blf246b sot121B package
Contextual Info: Broadcast and ISM product portfolio Product type Package UHF 470-860 MHz BLF878 SOT979A BLF878 SOT979A BLF871 SOT467C BLF871 SOT467C BLF861A SOT540A General purpose < 2 GHz BLF647 SOT540A BLF2045 SOT467C BLF1822-10 SOT467C BLF1043 SOT538A BLF871 SOT467C

Contextual Info: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 2 — 5 March 2014 Preliminary data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

BLF1822

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Preliminary specification 2001 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • High power gain PIN

Contextual Info: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 3 — 1 April 2014 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information

Contextual Info: BLF18xXR S 50 V LDMOS RF power transistors NXP’s eXtremely Rugged family: unsurpassed future-proof performance Our latest 50 V LDMOS portfolio brings you the answer to higher output power and simplified design-in for demanding RF systems. NXP’s innovative 50 V XR ‘eXtremely

Contextual Info: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 2 — 27 February 2014 Preliminary data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

BLF183XR

Contextual Info: BLF183XR; BLF183XRS Power LDMOS transistor Rev. 1 — 19 August 2014 Objective data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

BLF184XR

Abstract: 001aan207 blf184xrs SOT1214B sot1214 BLF184
Contextual Info: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information

Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 3 — 1 August 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES

2222-581

Abstract: transistor BR 471 A 821 ceramic capacitor smd capacitor philips 0805 smd capacitor philips 2222 capacitor philips EL series SMD transistor philips capacitor capacitor ceramic variable RF iec C19
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Preliminary specification 2001 Aug 16 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • High power gain PIN

1800 ldmos

Abstract: 2222-581 BLF1820-70
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification 2001 Feb 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 FEATURES PINNING • High power gain PIN DESCRIPTION

4S2/4330 030 36301

Abstract: 1800 ldmos 2222-581 4S2/4330 philips resistor 2322 BLF1820-90 4330 030 36301
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification 2001 Mar 07 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 FEATURES PINNING • High power gain PIN DESCRIPTION