002105B Search Results

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

MSM538021C

Abstract: MSM538031C
Contextual Info: O K I Semiconductor MSM538031C 1,048,576-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION ^ 3 }' i8h"Speed f iC° n §ate CM OS M ask ROM with 1'048,576-word x 8-bit capac­ ity. The M SM 538031C operates on a smgle 3.0 V or 3.3 V power supply but offers the sam e fast access times

Contextual Info: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled

cro circuit diagram

Abstract: MSM7582 MSM7582B
Contextual Info: O K I Semiconductor MSM75 8 2 /75 8 2 B ji/ 4 Shift QPSK MODEM GENERAL DESCRIPTION The M S M 7582/7582B are CMOS ICs for the j t/4 shift QPSK m odem developed for the digital cordless telephone systems. The devices are designed for Personal and Cell station applications, the MSM7582B is the

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET JS8855-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 32 dBm at f = 15 G H z • High gain - G idB = 7 dB at f = 15 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)