Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w o rds by 9 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use o f Rambus S ignaling
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PD488170L
18M-BIT
18-Megabit
P32G6-65A
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A/TDA 7977
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 18ns tAA Access Time From Address
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72-Pin
0002CPS
IBM11D2360E
IBM11E2360E
IBM11D1360E
IBM11E1360E
SA14-4313
03H7149)
SA14-4309
03H7148)
A/TDA 7977
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L50H
Abstract: No abstract text available
Text: IB M 1 1 M 1 7 3 0 B IB M 1 1 M 1 7 3 0 B B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: -60
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1Mx72
110ns
130ns
IBM11M1730B
IBM11M1730BB
50H4347
SA14-4607-02
L50H
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 4 7 3 0 H IB M 1 1 M 4 7 3 0 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits:
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4Mx72
130ns
110ns
0Q0M72fl
IBM11M4730H
IBM11M4730HB
00047ST
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Untitled
Abstract: No abstract text available
Text: IBM11M4730C 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 4Mx72 Fast Page Mode DIMM - • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC
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IBM11M4730C
4Mx72
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
35Qis
350ns)
256ms
128ms,
43G9649
SA14-4201
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Untitled
Abstract: No abstract text available
Text: IBM11N4645B/C IBM11N4735B/C 4M x 64/72 DRAM MODULE • System Performance Benefits: Features • 168 Pin JED EC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64, 4Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 -70 Wc RAS Access Time
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IBM11N4645B/C
IBM11N4735B/C
4Mx64,
4Mx72
104ns
124ns
0000M52
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Untitled
Abstract: No abstract text available
Text: I =¥= = = = •= IB M 0 3 8 3 2 9 P Q 6 IB M 0 3 8 3 2 9 N Q 6 Advance 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos itive edge of system clock. • Internal pipelined operation; column address can be changed every clock cycle.
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IBM038329PQ6
IBM038329NQ6
MS-026/Varlation
27H6281
000117c!
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 S 8 3 2 0 H P 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: • • • • • • 60 W c RAS Access Time 60ns I tcAC CAS Access Time 15ns I AA Access Time From Address 30ns I RC Cycle Time 110ns I
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72-Pin
110ns
256ms
IBM11S8320HP
8Mx32
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Untitled
Abstract: No abstract text available
Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power Dissipation - Active max - 85mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)
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IBM0116405
IBM0116405M
IBM0116405B
IBM0116405P
28H4720
28H4720.
350ns)
28H4720
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 N 1 6 6 4 5 B /C IB M 1 1 N 1 6 7 3 5 B /C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64,16Mx72 Extended Data Out Page Mode DIMMs • Performance: • Extended Data Out EDO Mode, Read-ModifyWrite Cycles
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16Mx64
16Mx72
104ns
IBM11N16645B/C
IBM11N16735B/C
00bl4b
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Untitled
Abstract: No abstract text available
Text: I B M 1 1N1645L 1M X 64 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V ss/V qc P^s -Byte write, byte read accesses
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1N1645L
1Mx64
104ns
124ns
IBM11N1645L
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Untitled
Abstract: No abstract text available
Text: IBM11N1645B IBM11N1735B 1M x 64/72 DRAM Module mmnri r r i,„ , ^", | Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module
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IBM11N1645B
IBM11N1735B
1Mx72
104ns
124ns
75H3414
SA14-4621-00
IBM11N1735B
SA14-4621
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Untitled
Abstract: No abstract text available
Text: IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • Read-Modlfy-Write 16,777,216 word by 4 bit organization Performance: • Single 3.3 ± 0.3V power supply • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0165405B
IBM0165405P
104ns
145ma
155ma
135ma
130ma
27H6250
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Siemens xl 532
Abstract: KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166
Text: SIEMENS C16x-Family of SAB 80C166W/83C166W High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166W / 83C166W • • • • • • • • • • • • • • • • • • • • • • • • • • • • 16-Bit Microcontroller
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C16x-Family
80C166W/83C166W
16-Bit
80C166W
83C166W
235LD5
Siemens xl 532
KCB02
SAB 529
83C166W-5M
Siemens mt4
siemens multi channel timer
80C166W-MT3
Compare CISC and RISC
gpr 163
80C166
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