00D37 Search Results

00D37SS

Abstract: ECG1005 G1006 ECG1006 GDD3731 stereo to 5.1 printed board 1-50 philips ecg 70.0 of low frequency gain" 00375B ECQ199
Contextual Info: G INC PHILIPS E C 17E D ^53=150 00D37SS T T-77-05-05 ECG1006 FM MULTIPLEX STEREO D ECO D ER LOW LEVEL INPUT semiconductors ;! Composit signal amplifier, 38 kH z doubler/ il decoder, separation controller, lamp driver. C ASE OUTLINE unit: mm EQUIVALENT CIRCUIT

transistor w7

Abstract: PJ99
Contextual Info: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99

High-Voltage Amplifiers

Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • DS0433Ô 00D37M1 T ■ AL GR T-91-01 P R O C E S S VXA Process VXA NPN Small-Signal Transistor Process VXA is a double-diffused NPN silicon epi­ taxial planar device. It is designed for use in generalpurpose high-voltage amplifiers. It is the complement

transistor a13

Abstract: 2912 TRANSISTOR PNP A13 transistor 2912 npn D5043
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • D50433Ö 00D3707 T ■ ALGR T -9 1 -0 1 PROCESS JMA Process JMA PNP Small-Signal Transistor Process JM A is a P N P double-diffused Silicon epi­ taxial planar transistor. Process JM A finds broad ap­ plication as a medium-power amplifier and switching

Contextual Info: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

NJM064

Abstract: NJM2164 NJM2164D NJM2164M
Contextual Info: QUAD J-FET INPUT OPERATIONAL AMPLIFIER NJM2164 T h e N JM 2 1 6 4 com bines feature o f the N JM 0 6 4 as w ell as an d p ro v id ing the capability o f w ider b a n d -w id th an d higher slew rate. It is suitable for telecom a p p licatio n active filters etc. .

BU4051BF

Abstract: BU4051B GGG3710
Contextual Info: ÜJlffl IC/Standard ICs ROHM CO BU4051B/BU4051 BF LT» MOE BU4051Ü BU4051ÌB1F D B TÖSfiTTT □ □ □ 3 7 0 ci 4 BIRHtl 8ch 7 J - n 7 ' ? j \ , 3 - 7 0\ s W / T ^ r J U 3 - 7 0ls<7-y 8-Channel Analog Multiplexer/Demultiplexer 7 = 5 7 -/2 . • 4+fl5'tfj£l]/'Dimensions Unit : mm

Contextual Info: GENNUM C O R P O R A T I O G X 434 Monolithic 4x1 Video Multiplexer N DATA SHEET FEATURES CIRCUIT DESCRIPTION • low differential gain: 0.03% typ. at 4.43 MHz The GX434 is a high performance low cost monolithic 4x1 video multiplexer incorporating four bipolar switches with a

Contextual Info: EL7104C/EL7114C Features G eneral D escription • Industry standard driver replacement • Improved response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate

BU4066BF

Abstract: BU4066B BU4066BL U4066B BU406-S BU4016B bu4066
Contextual Info: /Jlffl IC/Standard ICs ROHM CO BU4066B/BU4066BF/BU4066BL LTD 4DE D H 7 S 2 f l cT :i ci 0QQ37Q5 7 HRHH- y K 7 tn ^ 7 < 7 f Quad Analog Switch 7 -S/-/I B U 4@ S S B L • i+JF5\fìÉ0//Dimensions Unit : mm BU4066B, BU4066BF, BU4066BL ( i, 4 @1 W 5 & \ 7 + n

NTE7447

Abstract: NTE7445 NTE74LS47 NTE7448 NTE7446 NTE7443 NTE74C42 NTE7450 NTE7444 NTE7451
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7442, 16-Lead DIP, See Diag. 249 NTE74C42, NTE74LS42 4-Line-to-1 0-L in e BCD-to-Decimal Decoder NTE7443 16-Lead DIP, See Diag. 249 4-Line-^to-10-Line Excess 3-to-D ecim al Decoder Q vcc v cc Output 0 O

SP4630

Contextual Info: SIPEX CORP bOE J> m 8233711 0DQ37ES fll3 » S P X C ir N A v w im w v T ^ l- tO - A O * Corporator ▼ SIGNAL PROCESSING EXCELLENCE SP4630 20-Bit, 2KSPS Oversampling PGA/ADC FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 20-Bit Resolution at 2K Samples/Second

Contextual Info: A T & T NELEC ESE I C D 0050G2L D0037Ô3 2 AT&T Data Sheet o T7513A PCM Codec With Filters Features • Direct replacement for the industry-standard 2913 device ■ Differential architecture for high noise immunity and PSRR ■ Low-power, latchup-free CMOS technology

Contextual Info: LINEAR INTEGRATED CIRCUITS NTE7000 16-Lead DIP, See Diafc. 248 5W Audio Amp wMuting, = 14V Typ HTE7001 16-Lead DIP, See Diag. 248 Horizontal Combination Circuit for Color TV & Computer Monitor, VCC= 12V Output | Source Output Trigger Pulse Input Bootstrap

njm2120 equivalent

Abstract: NJM2120 DDG3777 NJM212DD NJM4558 gv 271
Contextual Info: SWITCHING OPERATIONAL AMPLIFIER NJM2120 T h e N JM 2 1 2 0 is a d u a l o p eratio n al am plifier o f 2 -IN P U T a n d 1 -O U T P U T w ith a n alo g switch. T h e N JM 2120 c an be used as a n alo g sw itch u n d e r th e co n d itio n o f G v = 0 dB, as S w itc h + A m p in o rd e r th a t each g a in A o r B c an b e adjusted

l441

Contextual Info: August 1994 Micro Linear ML4410 Sensorless Spindle Motor Controller GENERAL DESCRIPTION Th e M L4 4 1 0 provides com plete com m utation for delta or w y e w ound Brushless D C B LD C motors w ithout the need for signals from H all Effect sensors. This IC senses

0a214

Abstract: 048E3 09376h 036D3 030B9H 036B6 08d06 09-D2 0A211 0817AH
Contextual Info: TMS320 DSP Number 84E DESIGNER’S NOTEBOOK Speech data for Spanish LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get Spanish speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts ?

Contextual Info: IBM11D4325B IBM11D8325B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC I RAS Access Time 60ns 70ns tcAC ! CAS Access Time 15ns 2 0 W ¡Access Time From Address 30ns 35ns tRC ¡CycleTime

SKM 300 GA 102 D

Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Contextual Info: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C

C3016

Contextual Info: QUALITY TECH NOL OGIES CORP QUALITY TECHNOLOGIES S7E D • 7MbbaSl □D037fcit:i 7 ■ DOUBLE HETEROJUNCTION AIGaAs VERY HIGH INTENSITY RED LED LAMPS T-1% (5mm HLMP-4 1 0 0 / 4 1 0 1 PACKAGE DIMENSIONS DESCRIPTION ».230(5.84) h - 0.100(2.54) NOM. \ y - CATHODE INDEX

Contextual Info: DLTS-5 Microsemi Corp. SASTA ¿.VI. CV1 thru SCOTTSn UJ. A l DLTS-30 iM 2ì 941-6300 FEATURES This series of TAZ devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices; unidirectional or bidirectional, common buss connections, per package. The dual-in-line is

T7513

Abstract: T7513A-CM T7513A-EE T7513A-PE direct replacement
Contextual Info: A T & T NELEC I ESE C D 0050G2L D0037Ô3 2 AT&T Data Sheet o T7513A PCM Codec With Filters Features • Direct replacement for the industry-standard 2913 device ■ Differential architecture for high noise immunity and PSRR ■ Low-power, latchup-free CMOS technology

ECG1011

Abstract: ECG1010 KF10 ecg1009
Contextual Info: 17E D PHILIPS E C G INC • btiSBTHfi DD0373M 0 ECG 1009 1W A U D IO P O W E R A M P L IF IE R ECG 1010 2 W A U D IO PO W E R A M P L IF IE R semiconductors ECG1011 3W A U D IO P O W E R A M P L IF IE R Dimensions In Millimeters ECG1009 Ta=25°C Vcc RL 11

EL7144

Abstract: el7144c
Contextual Info: EL7144C élantec EL7144C HÎGH PEftFÖBMANCE ANALQS INTEGRATED CIRCUITS F e a tu r e s G en era l D e sc rip tio n • • • • • • • • • The EL7144C dual input, driver achieves excellent switching while providing added flexibility. The 2-input logic and configu­