D0037 Search Results

Contextual Info: A T & T NELEC ESE I C D 0050G2L D0037Ô3 2 AT&T Data Sheet o T7513A PCM Codec With Filters Features • Direct replacement for the industry-standard 2913 device ■ Differential architecture for high noise immunity and PSRR ■ Low-power, latchup-free CMOS technology

ECG1014

Contextual Info: P H IL IP S E C G INC 17E D bbSBTSû D003744 3 / *" ECG1014 and ECG1017 W IRELESS MICROPHONE AMP. MODULES THIN-FILM HYBRID semiconductors 3.2max. ^_13.4max.— m — <n l toi_ JU 2 54* 4J ‘ 0.2 6 0.4 5 1.27 ECG1014 3.3 1.5C 0.45*1" j3 usi i r 2-54 ËCG1017

T7513

Abstract: T7513A-CM T7513A-EE T7513A-PE direct replacement
Contextual Info: A T & T NELEC I ESE C D 0050G2L D0037Ô3 2 AT&T Data Sheet o T7513A PCM Codec With Filters Features • Direct replacement for the industry-standard 2913 device ■ Differential architecture for high noise immunity and PSRR ■ Low-power, latchup-free CMOS technology

Contextual Info: I SOLITRON DEVICES INC 4tE I • a3b»b05 D00371B I1!! ■ S O U _ ¡ y j O U T R O N D E V I C E S P R O D U C T S P E C IF IC A T I O N -12 3% - VOLT REGULATOR TYPE NO. 5 5 ° C TO + 1 2 5 ° C Si CUST. DWG REV. DEVICE MARKING 0 LLJ <b> ci CJSE095

TB 2929

Abstract: 918 TRANSISTOR PNP
Contextual Info: L . . . . . AL L EGRO _ _ _ MI C ROS Y S T E MS I NC T3 I> • 0SD4 33 Ô D00372S 1 ■ ALGR T-91-01 PROCESS STL Process STL PNP Small-Signal Transistor Process STL is a double-diffused epitaxial planar

Contextual Info: ROHM CO LTD MOE D • /Jill IC/Standard ICs 7 Ô S Ô tm D003743 BU4503B/BU4503BF ^ X 3 T.f'— h ^ ' y 7 7 Hex 3 -State Noninverting Buffer B U 4 5 0 3 B 4 BRHM T -4 3 -2 1 B U 4 5 0 3 B F 1ÿ ffl^ ÎÉ E l/D im e n s io n s Unit : mm sn BU4503B, BU4503BF(Jr 3 X f — V<DJ W

REF191ESZ

Abstract: ref195fsz REF196GSZ
Contextual Info: Data Sheet Precision Micropower, Low Dropout Voltage References REF19x Series FEATURES TEST PINS Temperature coefficient: 5 ppm/°C maximum High output current: 30 mA Low supply current: 45 A maximum Initial accuracy: ±2 mV maximum 1 Sleep mode: 15 μA maximum

EFM32GG290

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32GG290 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

Contextual Info: GENNUM C O R P O R A T I O G X 434 Monolithic 4x1 Video Multiplexer N DATA SHEET FEATURES CIRCUIT DESCRIPTION • low differential gain: 0.03% typ. at 4.43 MHz The GX434 is a high performance low cost monolithic 4x1 video multiplexer incorporating four bipolar switches with a

BQ4025

Abstract: bq4025Y
Contextual Info: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium

Contextual Info: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C

Contextual Info: IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation

REF192GSZ

Abstract: ref191esz REF196GSZ ref195gsz transistor 2N4033 ref195fsz d0037 REF196GRU ref195e 1N4148
Contextual Info: Precision Micropower, Low Dropout Voltage References REF19x Series FEATURES TEST PINS Temperature coefficient: 5 ppm/°C maximum High output current: 30 mA Low supply current: 45 A maximum Initial accuracy: ±2 mV maximum 1 Sleep mode: 15 μA maximum Low dropout voltage

Contextual Info: 8522 LTM- 8530 8529 SERIES LITEM ï ^ a 1-3-7 0.56 INCH 7-SEGMENT NUMERIC DISPLAY WITH MOS I.C. DRIVER TAIWAN LITON ELECTRONIC 4TE ]> m 6 6 3 5 ^ 5 0003704 Ö70 • T L I T FEATURES • • • • • • 0.56 INCH 14.22m m D IG IT HEIGHT. W IDE SUPPLY V O L T A G E O PERATION .

cd 4069 pin data

Abstract: 82C43 CI 4069 cjne MSM80C31F MSM80C31 MSM80C51F *82c43 80C31F
Contextual Info: O K I SEMICONDUCTOR GROUP IDE D | t.754S4D Q003b78 7 | C 5 1 1 C .1 I s e m i c o n c a y c t o r M S M 8 0 C 3 1 F /M S M 8 0 C 5 1 F -t - w - h - p i - n '- * - * ! CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51F m icrocontroller is a low power, high performance 8-bit single

25X1

Abstract: bq4024 bq4024Y
Contextual Info: bq4024/bq4024Y BENCHMARQ 128Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 w ords by 16 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d

EFM32GG290

Abstract: CL1252 EFM32GG
Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32GG290 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

SD-Card MMC

Abstract: AT91SAM9G20-EK AT91SAM9G20 AT91SAM-ICE AT45DB642 nandflash
Contextual Info: ARM-Based Products Application Group AT91SAM9G20-EK Test Software Revision Table: Revision 2.0 2.1 Date June 13, 2008 Nov 04, 2008 Comments Initial release Fixed PA8 configuration for correct DF card access w/ ROM code 1.5 1/14pages ARM-Based Products Application Group

Contextual Info: .the world's most energy friendly microcontrollers EFM32GG290 DATASHEET F1024/F512 • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System • 20 nA @ 3 V Shutoff Mode

HY628100

Contextual Info: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

CB Radio

Abstract: ECG1012
Contextual Info: PHILIPS E C G INC 17E D bt 5 3 i a fl 0 0 0 3 7 m ] ECG1012 THIN-FILM HYBRID OSCILLATOR MODULE sem iconductors - 8 .0 - General use for A M IF amp. to A F power amp. driver, and 2 7 M H z oscillator for CB radio. I0.0 E Q U IV A L E N T C IR C U IT 9.0 - I l~'-

Contextual Info: May 1992 PRELIMINARY Micro Linear ML4404 Trajectory Generator GENERAL DESCRIPTION FEATURES The ML4404 Trajectory Generator provides the trajectory function for time optimal head positioning systems. The ML4404 receives position and velocity information from a servo controller, such as the

Contextual Info: 8088 8-Bit Microprocessor CPU ¡APX86 Family FINAL DISTIN C TIVE CHARA CTERISTICS • • • • • 8-bit data bus, 16-bit internal architecture Directly addresses 1 Mbyte o f memory Software com patible with 8086 CPU Byte, word, and block operations 24 operand addressing modes