00E7 Search Results

Contextual Info: 07^73:1.2 00E7534 SDh AM P Headers .100 [2.54] Centerline Dimensioning: D im e n s io n s a r e in in c h e s a n d m illim e te rs . V a lu e s in b ra c k e ts a re m e tric e q u iv a le n ts . C h a rt c o n ta in s d im e n s io n s in in c h e s o v e r

foh333

Abstract: fdh300 equivalent fdh300
Contextual Info: FAIRCHIL» SEMICONDUCTOR. 04 1 D E I 3 4 1 ^ 7 4 00E7333 4 FDH300/FDLL300 FDH333/FDLL333 FAIRCHILD A Schlumberger Company T- ùi - o High Conductance Low Leakage Diodes • BV. . ISO V MIN @ 100 mA • 'B • 1.0 nA (MAX) @ 125 V (F0H300), 3.0 nA (MAX) @ 125 V (FDH333)

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'iai 00E7711 MOM BF970 b^E J> SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic T-package intended for application as self-oscillating mixer stage in u.h.f. tuners. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

D1N3064

Abstract: 1N3064 1N4305 1N4454 FDLL3064 FDLL4305 FDLL4454
Contextual Info: FAIRCHILD SE MICO ND UC TO R , fl4 DE | 00E74A4 3 | - 3469674 FAIRCHILD SEMICONDUCTOR ESSS5ESS 84 D 2 7 4 8 4 D« 1N3064/4305/4454T-o3-oy FD LL3064/4305/4454 FAIRCHILD A Schlumberger Company Ultra Fast Low Capacitance Diodes • C . . .2.0 pF @ Vr = 0, « = 1.0 MHz

transistor D 13001

Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 00E75fifl 31D b'lE » APX 13001/ BC618 NPN D A R LIN G TO N TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. They can be used for general purpose low frequency applications and as relay drivers etc.

1PS226

Abstract: PS226 SC59 SMD MARKING CODE M 4 Diode MARKING CODE c3t high speed double diode
Contextual Info: W AMER PHILIPS/DISCRETE bTE D m bbSBTBl 00E71D? 5TÔ B 1 A P X P relim in ary sp e c ific atio n P hilips S e m ic o n d u c to rs H igh sp eed d o u b le d io d e FEATURES 1P S 226 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode

TAG thyristor

Abstract: LM267S thyristor tag a2 thyristor TAG 103 BT150 BT thyristor tag 453 400 thyristor BT 200
Contextual Info: I I N AUER PHILIPS/DISCRETE bTE D • bbS3T31 00E7E^3 T35 ■ APX b IlbU THYRISTORS Glass-passivated th y ris to r in T 0 -2 2 0 A B envelope, fe a turin g sensitive gate triggering as lo w as 200 ^ A . P a rtic u la rly suitable in applications where high fatigue stresses due to therm al cyclin g and repeated

BLX91CB

Abstract: BLX91 dust cap LC SOT-48
Contextual Info: PHILIPS INTERNATIONAL 41E ]> B ?llüfl2b 00E7ÛB3 II M A IN T E N A N C E TYPE 3 BI P H I N BLX91CB T '3 3 '0 S SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar ep ita xia l tran sisto r p rim a rily designed fo r use in fast-sw itching w ide-band video

FDH666

Abstract: FDH600
Contextual Info: FAIRCHILD SE MIC OND UC TOR s s p A Schlumberger Company B4 : DE~J 34bTb?4 00E733S A B S S S fg a S S A“ " ' Ultra Fast Diodes PACKAGES • C . .2.5 pF MAX FDH600, 3.5 pF (MAX) FDH666 • VF . . . 1.0 V (MAX) @ 100 mA (FDH666) . . . 1.0 V (MAX) @ 200 mA (FDH600)

LK-340

Abstract: near IR photodiodes with daylight filter
Contextual Info: SIEMENS AK TIENGESELLSCHAF S IE M E N S 47E D • ÔS35b05 00E74Ö5 1 « S I E G SFH248 WITH DAYLIGHT FILTER SFH 248F SILICON DIFFERENTIAL PHOTODIODE FEATURES Maximum Ratings • High Reliability • Low Noise • High Open-Circuit Voltage as Photovoltaic Cells

EM4001

Abstract: 00E733S SFH250 IR DATA B 660 TG "EM 4001" sfh250a 250f SFH250
Contextual Info: SIEMENS AKT IENGESELLSCHAF 47E D SIEM EN S • ÔEBSbOS 00E733S 4 « S I E 6 SFH250 WITH IR FILTER SFH250F PLASTIC FIBER OPTIC PHOTODIODE DETECTOR T H l-S Preliminary Data Sheet FEATURES Maximum Ratings • 2.3 mm Aperture Holds Standard 1000 Micron Plastic Fiber

Contextual Info: N E C ELECTRONICS INC 30E D • b427S25 00E73Eb I ■ pPD79021 16-Bit Microcomputer; Single-Chip, CMOS, With Built-In RTOS NEC Electronics Inc. _ Description The ftPD79021 is an upgraded juPD70332 V35M single­ chip microcomputer with a built-in real-time operating

Philips KS 40 Temperature Control

Abstract: BT138F M2401 triac D 798 GG2723B M2405A TRIAC BT138F
Contextual Info: N AMER P H I L I P S / D I S C R E T E bSE D • bbS3^31 00E753Q flSl B I A P X BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 am pere tria cs in S O T -1 8 6 envelopes, w h ich feature an e le c tric a lly isolated m ounting base. T h e y are intended fo r use in ap p lication s requiring high b id ire ctio n a l transient and blo ck in g

PAL16R8 mono

Contextual Info: ADV MICRO 0257526 PLA/PLE/ARRAYS TL. D E § ü 2 5 7 5 2 b 00E70Ö4 96D 2 7 0 8 4 D ADV MI CRO P L A / P L E / A R R A Y S PAL16R8 Family 16 L 8 ,16R8 16 R 6 ,16R4 Ordering Inform ation — Newer Products F eatures/B enefits • Standard 20-pln architectures

DIODE bym26c

Abstract: bym260 BYM26D BYM26 diode BYM26B BYM26C BYM26G BYM26 BYM26A BYM26E
Contextual Info: N AMER PHILIPS/DISCRETE T> blE bbS3T31 00E7G1S P h ilip s S e m ic o n d u c to rs P ro d u c t s p e c ific a tio n Very fas t so ft-reco very avalanche rectifier d iodes FEA TUR ES • N o n-sna p-off soft- recovery sw itching ch aracteristics • C apability of absorbing reverse

TMPZ84CO

Abstract: Z80 zilog T6963C TMPZ84COOP TMPZ-80 z80 timing diagram
Contextual Info: TO SH IBA T6963C TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6963C DOT MATRIX LCD CONTROL LSI The T6963C is an LCD controller designed to be used w ith LCD control driver LSIs and data display memories. The device has an 8 -bit parallel data bus and control

32176 Group PWM CODE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FDCG240128B-FSBFBH-51TN

Abstract: SAMSUNG LCD GRAPHIC DISPLAY FDCG240128B cog lcm 116
Contextual Info: SPECIFICATION GRAPHIC TYPE DOT MATRIX LCD MODULE FFF HC RoHS ITEM NUMBER: ESTABLISHED DATE: INITIAL ISSUED DATE: DATASHEET VERSION: ISSUED BY: COPYRIGHT 70 C -20 C FDCG240128B-FSBFBH-51TN 2001.03 2004.07 2008 VERSION CHECKED BY: APPROVED BY: 2000 ~ 2008 FORDATA ELECTRONIC CO., LTD. ALL RIGHTS RESERVED

Contextual Info: DOCUMENT NUMBER 9S12H256BDGV1/D MC9S12H256 Device User Guide V01.16 Original Release Date: 29 SEP 2000 Revised: 05 NOV 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

mitsubishi split ac

Abstract: 013A1
Contextual Info: t U de nd v e er lo pm en Preliminary Specifications REV.A Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M16C / 6NT Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6NT group of single-chip microcomputers are built using the high-performance silicon gate

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: DAC1653Q/DAC1658Q Quad 16-bit DAC: 10 Gbps JESD204B interface: x2, x4 and x8 interpolating Advance data sheet Revision 2.3.1 1. GENERAL DESCRIPTION DAC1653Q and DAC1658Q are high-speed, high-performance 16-bit quad channel Digital-to-Analog Converters DACs .

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for