015B1USA Search Results

TME 57

Abstract: EDI8L32256C
Contextual Info: ^EDI. EDI8L32256C • 256Kx32 SRAM Module ELECTRONIC DtStGNS, N C PRELIMINARY 256Kx32 CMOS High Speed Static RAM Features The EDI8L32256C is a high speed, high performance, four megabit density Static RAM organized as a 256Kx32 bit 256Kx32 bit CMOS Static

Contextual Info: ED/8F1664Ç m x 64KXK SRAM Module ELECTRON IC D E SIG N INC. 64Kx16StaticRAM C M O S 'M x M e Features TTieEDI8F1664C is a high speed 64Kx16CM0S Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module

f2342

Contextual Info: m EDI7F342MV i 2Megx32 ElfCTlîûHlüDBIi5N5.IIMû 2Megx32 Flash Module The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Meg x 32 respectively. The modules are based on Intel’s 28F016B3-2Megx8 Flash device in TSOP packageswhich are mounted on an FR4

256KX16

Abstract: EDI8F16256C
Contextual Info: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static

Contextual Info: WSX EDI441024C afCTROMC 0E9GNSINC. 1Megx4 Fast Page DRAM 1Megabit x 4 Dynamic RAM 5V, Fast Page Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20

Contextual Info: WEDl EDI8F24128C 128Kx24 SRAM Module ELECTRONIC DE9GNS. « C . 128KX24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages

Contextual Info: EDI444096CA 4Megx4 EDO DRAM ELfCTROMC DESIGNS, N C 4 Megabit x 4 Dynamic RAM 5V, Extended Data Out The EDI444096CA is a high performance, low power CMOS F eatu res Dynamic RAM organized as 4 Megabit x 4. The EDI444096CA features EDO Mode operation which allows high speed random

ED188512CA17

Abstract: EDI88512CA20N36B 2A153 ED188512CA
Contextual Info: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version

EDI8F82048C70BSC

Abstract: EDI8F82048C OMA210
Contextual Info: MSX EDI8F82048C 2 MegxS SRAM Module ELECTRONIC DESIGNS. M C 2Megabitsx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi-layered 2 Meg x 8 bit CMOS Static epoxy laminate FR4 substrate.

Contextual Info: ^ E D EDI88257C l 2S6Kx8 Static Ram ElECIROMC DESK5N& NC. 256Kx8 Static RAM CMOS, Module F e a tu r e s The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the JEDEC standard forthe two Random Access Memory

tme 126

Abstract: 64128C CZ 121 connector tme+126
Contextual Info: ^ED I EDI8F64128C EL£CTCOn C d c s g n s . n e l 128Kx64 SRAM Module 128KX64 Static RAM Highspeed CMOS Cache Module Features 1MByte Secondary C ache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium B a se d System s