0257S2B Search Results

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

14L4

Abstract: 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PAL10H8
Contextual Info: ADV MICRO PLA/PL E/ ARR AY S =ib U2 b7526 ADV MICRO P L A / P L E / ARRAYS D E | 055755b 0057114 7 96D 27114 D T-V6-/3-V7 Combinatorial PALI 0H8 Series 1 0 H 8 , 1 2 H 6 , 1 4 H 4 , 1 6 H 2 1 6 C 1 1 0 L 8 , 1 2 L 6 , 1 4 L 4 - , 1 6 L 2 Ordering Information

Contextual Info: FINAL a COM’L: -12 Advanced Micro Devices M A C H L V 2 1 0 - 1 2 High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC compatible — V c c = +3.0 V to +3.6 V ■ 58 MHz fMAxexternal Commercial ■ 38 Inputs with advanced pull-up/pull-down

mach 3 family amd

Abstract: circuit diagram of QS 8005 PAL26V16 D750 MACH110 MACH210 MACH215 PAL22V10 mach 1 family amd NS4N
Contextual Info: FINAL COM’L: -7.5/10/12/15/20 IND: -10/12/14/18/24 M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic Z I Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells ■ Programmable power-down mode ■ 32 Outputs

PAL16l8 MMI

Abstract: PAL16LA OO3A MARKING PAL 006A pal 007a PLA 16L8 PAL16L8 programming algorithm IC PALCE16 mmi pla programmer reference guide pal 005a
Contextual Info: ADV HICRO PLA/PLE/ARRAYS C O M ’L 2flE 0aS7S2b D OGa^Mb- M IL P A L 1 6 R 8 il \ T -4 6 —1 9 -1 3 Am>a 5 Advanced Micro Devices F a m i l y 20-pin TTL P rogram m able Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay

Contextual Info: COM'L: -15/25 IND: -12/15/25 PALCE16V8Z FAMILY a Advanced Micro Devices Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 15 nA Standby Current — 12 ns propagation delay for “-12” version

palce16v8 programming algorithm

Contextual Info: 5TE D • 02 57 5 2 b 00 32 2 7 1 510 MANDE ADV MICRO PLA/PLE/ARRAYS COM’L: H-7/10/15/25, Q-15/25 -_ MIL: H-10/15/20/25 PALCE16V8 Family AdvS EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS ■ ■ Pin, function and fuse-map compatible with all

16L8-5

Abstract: PAL16R8
Contextual Info: ADV MICRO P L A / P L E / A R R A Y S 2ÔE D G25752fci GG311Gb b AMD2 CO M 'L: -5/4 T—46—19—13 Z f Advanced Micro Devices PAL16R8-5/4 Series 5 ns TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5 ns and 4.5 ns m axim um pro p a g a tio n delay

Pal programming

Abstract: EP610 PALCE610 EP610 ORDERING EP610 "pin compatible"
Contextual Info: COM’L: H-15/25 Advanced Micro Devices PALCE610 Family EE CMOS High Performance Programmable Array Logic DISTINCTIVE CHARACTERISTICS • AMD’s Programmable Array Logic PAL architecture Asynchronous clocking via product term or bank register clocking from external pins

PALCE16VQ-25

Abstract: palce16v8 programming guide palce16v8h20
Contextual Info: COM’L: H-5/7/10/15/25,0-10/15/25 IND: H-10/15/25, Q-20/25 MIL: H-15/20/25 PALCE16V8 Family EE CMOS 20-Pin Universal Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Pin, function and fuse-map compatible with all 20-pin GAL devices

Contextual Info: ADV MICRO PLA/PLE/ARRAYS c o m 2ÖE D fl 055752b 002^742 2 • AMD2 -l PLS167-33, PLSCE167H-33 PLS168-33, PLSCE168H-33 ' ^ Advanœd mero Devices 24-Pin TTL/CMOS Programmable Logic Sequencers DISTINCTIVE CHARACTERISTICS ■ ■ Field-programm able replacement for

Contextual Info: FINAL IND: -10/12/14/18/24 COM’L: -7.5/10/12/15/20 a Advanced Micro Devices M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64Macrocells ■ Programmable power-down mode ■ 7.5 ns î p d Commercial

AmPAL23S8-30

Contextual Info: A DV MICRO PLA/PLE/ARRAYS , Tt. D e | 02S7S2t, 0 0 2 7 2 2 7 1 T -V 4 -/3 -V 7 AmPAL23S8 20-Pin IMOX PAL Device-Based Sequencer Distinctive C haracteristics • • • • • 14 Registers - 4 Output Logic Macrocells OLMs - 4 Output Registers - 6 Buried State Registers (BSRs)

Contextual Info: CO M 'L: H-25 Advanced Micro Devices PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE technology allow s reprogram m ability ■ 16 bidirectional user-program m able I/O logic

Am2BF010A

Abstract: to525 Transistor 2SC 2166
Contextual Info: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■

MACH210

Contextual Info: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 a IND: -12/14/18/24 MACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ Peripheral Component Interconnect PCI

Contextual Info: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current

Contextual Info: FINAL COM’L: -12/15/20 a IND: -14/18/24 Advanced Micro Devices M A C H 110-1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 32Macrocells ■ 32 Outputs ■ 12 ns fpD Commercial 14 ns tpD Industrial ■ 2 “PAL22V16” Blocks

Contextual Info: 51E DE5752b D 003225b 577 • A U D E ADV MICRO P L A / P L E / A R R A Y S COM’L: -4/5/7/D/B/B-2/A MIL: - 1 0 /1 2/B/B-2/A/B-4 a Advanced Micro Devices PAL16R8 Family 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS ■ As fast as 4.5 ns maximum propagation delay

Contextual Info: COM’L: H-7/10/15/20 IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high

Contextual Info: P R E L IM IN A R Y CO M ’L: -7/10/12/15/20 MACH221 -7/10/12/15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 96 M acrocells ■ 7.5 ns tpD ■ ■ 133 M Hz fcNT ■ 56 Bus-Friendly Inputs ■

Contextual Info: COM’L: H-7/10/15/20 n IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 115 mA at high

Contextual Info: ADV NICRO PLA/PLE/ARRAYS PA LC E 29M 16H - 25/35 13E 0 > 0E5752t □ O S A I S' I I 24-Pin E2-Based CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS High-performance semicustom logic replace­ ment; Electrically Erasable E2 technology allows rep ro g ra m m a b le

M27C4096

Abstract: Am27C4096
Contextual Info: FINAL a Advanced Micro Devices Am27C4096 4 M egabit 262,144 x 16-B it C M O S EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 90 ns ■ Low power consumption — 100 pA maximum CMOS standby current ■ JEDEC-approved pinout ■ Single + 5 V power supply