0257S2FL Search Results

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

Contextual Info: ADV MICRO MEMORY 14E D | 0ES752fl üa27t.?S Am27C49 =1 Adva^ 65,536-Bit (8192x8 High-Performance CMOS PROM Devices DISTINCTIVE CHARACTERISTICS • • • High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs —

Contextual Info: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current

Contextual Info: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements

MAE A1470

Contextual Info: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current

Contextual Info: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements

Contextual Info: ]>i| 02S7S2Ö OOSSSÖS T ADV MICRO -CMEMORY} 0257528 ADV M I C R O MEMORY 89D 25 585 T dfi q S" Am27LS07 flft T462308 64-Bit Low-Power Noninverting-Output Bipolar RAM Ï DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit low-power Schottky

AM27C64

Contextual Info: AOV MI CR O MEMORY IM E D Q 0ES7S26 O O S V a 1! ? i l T-Hb-i%-Z°[ A m 2 7 C 6 4 “ 8,192 x 8-Bit CMOS EPROM £ Devices D IS T IN C T IV E C H A R A C T E R IS T IC S JEDEC-approved pinout ± 10% power supply tolerance available One-Time Programmable OTP Flashrite program ­

AM9864

Abstract: AM9864-2 AM9864-20 AM9864-25 AM9864-3 b00053
Contextual Info: ADV MICRO -CHEflORY} Tb Am9864 Am9864 8 1 9 2 x 8 -B it Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS Fast Read Access Time Am9864-2/-20 : 200 ns Am9864 /-25 : 250 ns Am9864-30 : 300 ns Am9864-3/-35 : 350 ns Minimum endurance of 10,000 write cycles per byte with