29F100 Search Results

M29F100

Abstract: M29F100B M29F100T
Contextual Info: w , SGS-THOMSON M 29F100T M 29F100B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME

Contextual Info: SGS-THOMSON M 29F100T M 29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical

AM29F032B 04h

Abstract: 19945 AM29F010
Contextual Info: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash

29f1008

Abstract: 29f100
Contextual Info: FINAL AMDB 29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

Contextual Info: 29F100T 29F100B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

Contextual Info: AMD£I FINAL 29F100T/Am29F1OOB 1 Megabit 131,072 x8-bit/65,536 x16-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ ■ — Automatically programs and verifies data at

29F100T

Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Contextual Info: 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MX29F100T

Contextual Info: INDEX ADVANCED INFORMATION 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current

29F800 equivalent

Contextual Info: PA48TS29F-800 Data Sheet 48 pin TSOP socket/44 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction The PA48TS29F adapter converts the pinout of the AMD 29F800 flash memories in 48 pin TSOP packages to the 44 pin DIP equivalent. While this device is not available in 44 pin DIP

29F100T

Contextual Info: ADVANCED INFORMATION 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

PA32-32

Abstract: PA32-32Z 32-32ZR lcc 20 test socket clcc 32 socket lcc 28 socket 32 pin plcc socket J-Lead, plcc clcc 28 socket footprint plcc 32
Contextual Info: PA32-32 Z Data Sheet 32 pin PLCC socket/32 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction This adapter allows programming of many 32 pin PLCC, CLCC and LCC devices in their 32 pin DIP footprint. The adapter is made up of 2 sub-assemblies. They assemble via

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: 29F100T 29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

LCD 4x20 HITACHI

Abstract: 29F400BT SHARP HD44780 sharp lcd 2X16 sja1000 29F400 flash BR10 BR12 HC12 MC68HC812A4
Contextual Info: HC12compact Version 1.0 Hardware-Manual January 1 1999 HC12compact Copyright C 1997-99 by MCT Lange & Thamm Mikrocomputertechnik GbR Hohe Str. 9-13 D-04107 Leipzig Telefon: +49-(0)341-2118354 Fax: +49-(0)341-2118355 mailto:leipzig@elektronikladen.de http://www.elektronikladen.de/mct

Contextual Info: 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

fujitsu 29LV160B

Abstract: 29F800B 29LV160B 29F160B m29f800bb
Contextual Info: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright  1995.2002:

29f400 psop

Abstract: intel 28f200 amd 29f200 29F200 29F200 flash intel 28F400 datasheet 29f200 amd29f400 29F200 amd 29F400 code
Contextual Info: E AP-615 APPLICATION NOTE Accommodating Industry Trends in Boot Code Flash Memory COLLIN K. ONG TECHNICAL MARKETING ENGINEER DEBORAH SEE FLASH SOFTWARE ENGINEER April 1995 Order Number: 292169-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including

29F100B

Abstract: 29f100
Contextual Info: 29F100T 29F100B SGS-THOMSON 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: INDEX ADVANCED INFORMATION 29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Sector protect/unprotect for 5V only system or 5V/