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    Walsin Technology Corporation 0402N681J500CT

    CAP CER 680PF 50V C0G/NP0 0402
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    DigiKey 0402N681J500CT Digi-Reel 68,187 1
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    Walsin Technology Corporation 0402N681G500CT

    CAP CER 680PF 50V C0G/NP0 0402
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    Walsin Technology Corporation 0402N6R0D500CT

    CAP CER 6PF 50V C0G/NP0 0402
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    Walsin Technology Corporation 0402N680J500CT

    CAP CER 68PF 50V C0G/NP0 0402
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    DigiKey 0402N680J500CT Cut Tape 16,046 1
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    Bristol Electronics 0402N680J500CT 1,230,000
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    Walsin Technology Corporation 0402N680F500CT

    CAP CER 68PF 50V C0G/NP0 0402
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    DigiKey 0402N680F500CT Digi-Reel 9,650 1
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    0402N680F500CT Cut Tape 9,650 1
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    02N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02N60

    Abstract: 02N60J 02N60h 2529V
    Text: 02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S


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    PDF AP02N60H/J-H O-252 AP02N60J-H) O-251 O-251 02N60J 02N60 02N60J 02N60h 2529V

    02n60s5

    Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


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    PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 02n60s5 Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: 02N60C3 02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


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    PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6

    iw3610

    Abstract: No abstract text available
    Text: iW3610 AC/DC Digital Power Controller for Dimmable LED Drivers 1.0 Features ●● Isolated AC/DC offline 100 Vac / 230 Vac ●● Line frequency ranges from 47 Hz to 64 Hz ●● Intelligent wall dimmer detection xx Leading-edge xx Trailing-edge xx No-dimmer detected


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    PDF iW3610 iw3610

    Untitled

    Abstract: No abstract text available
    Text: iW3614 AC/DC Digital Power Controller for High Power Factor Dimmable LED Drivers 1.0 Features ●● Isolated AC/DC offline 100 VAC / 230 VAC LED driver ●● Meets harmonic requirements, high power factor power factor > 0.9 without dimmer ●● Line frequency ranges from 45Hz to 66Hz


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    PDF iW3614

    02n60i

    Abstract: No abstract text available
    Text: 02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G 650V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power


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    PDF AP02N60I-A O-220CFM O-220CFM 02N60I 02n60i

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


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    PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252

    SPB02N60S5

    Abstract: No abstract text available
    Text: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    PDF SPB02N60S5 P-TO263-3-2 SPB02N60S5 Q67040-S4212 02N60S5

    02N60C3

    Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD
    Text: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


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    PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 02N60C3 smd diode marking 20 smd transistor marking 03 02N60 250TD

    02N60

    Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163
    Text: 02N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


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    PDF SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207 02N60 02N60S5 GPS05560 VPS05163

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. 02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 700V R DS ON 8.8Ω ID 1.4A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best


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    PDF AP02N60H/J-H-HF-3 AP02N60H-H-HF-3 O-252 O-251 AP02N60J-H-HF-3) AP02N60 02N60J O-251

    V6 marking code

    Abstract: diode marking v6
    Text: 02N60C3 02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


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    PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 V6 marking code diode marking v6

    SPD02N60S5

    Abstract: 02N60S5 P-TO252 SPU02N60S5
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


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    PDF SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5

    02N60S5

    Abstract: SPB02N60S5 SPP02N60S5
    Text: 02N60S5 02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


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    PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Text: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


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    PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163

    02N60

    Abstract: 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode
    Text: 02N60C3 02N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


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    PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode

    02N60C3

    Abstract: P-TO252 SPD02N60C3 SPU02N60C3
    Text: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


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    PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Q67040-S4181

    Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


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    PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 Q67040-S4181 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2

    02N60C3

    Abstract: SPP02N60C3 SPB02N60C3 02n60c
    Text: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated


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    PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPP02N60C3 SPB02N60C3 02n60c

    SPP02N60S5

    Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
    Text: 02N60S5 02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


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    PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5

    Untitled

    Abstract: No abstract text available
    Text: 02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors


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    PDF SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207

    trailing SCHEMATIC dimmer

    Abstract: SCHEMATIC leading edge dimmer trailing edge dimmer SCHEMATIC trailing edge dimmer 220 pwm dimmer 12.0 kw dimmer module Triac 3 kw dimmer schematic diagram IW3614 SCHEMATIC dimmer control dimmer controller ic
    Text: iW3614 AC/DC Digital Power Controller for High Power Factor Dimmable LED Drivers 1.0 Features ●● Isolated AC/DC offline 100 VAC / 230 VAC LED driver ●● Meets harmonic requirements, high power factor power factor > 0.9 without dimmer ●● Line frequency ranges from 45 Hz to 66 Hz


    Original
    PDF iW3614 iW3614 trailing SCHEMATIC dimmer SCHEMATIC leading edge dimmer trailing edge dimmer SCHEMATIC trailing edge dimmer 220 pwm dimmer 12.0 kw dimmer module Triac 3 kw dimmer schematic diagram SCHEMATIC dimmer control dimmer controller ic

    DD35

    Abstract: 02N60C3
    Text: 02N60C3 02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated


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    PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35