03MAR08 Search Results

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

1000-ESZ

Abstract: S571 CV7559
Contextual Info: REVISIONS TH IR D AN G LE PROJ. NOTES: 1. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS, GOLD PLATING INSULATOR - TEFLON, NATURAL 2. ELECTRICAL: A. IMPEDANCE: 75 OHM B. FREQUENCY RANGE: DC 0 - 2 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:

93SX4

Abstract: 93SX47 VDQ9327 ze 003
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER PLASTIC PLUNGER REV DOCUMENT C H A N G E D BY CHECK 3 0038558 SS 08MAY08 BLR rer 93SX47 PRODUCT CODE VDQ9327 88± . 0 I0 . 0 3 0d= . 0 1 0 . 0 9 1 MAX D±A MTG HOL E R .063 B DIA B T 3 5 0 ± .0 I 0 i I 50d= . 0 1 0

Si7686DP

Abstract: Si7686DP-T1-E3 Si7686DP-T1-GE3
Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

SC-70-6

Abstract: SiA513DJ SiA513DJ-T1-GE3
Contextual Info: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a

Si2301

Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

SiA413DJ

Abstract: SiA413DJ-T1-GE3
Contextual Info: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET

SiA411DJ

Abstract: SiA411DJ-T1-GE3
Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

si1016x-t1-ge3

Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V

74637

Abstract: SiA417
Contextual Info: New Product SiA417DJ Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.040 at VGS = - 1.8 V - 12 a 0.058 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V

Si2308BDS

Abstract: Si2308BDS-T1-E3
Contextual Info: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 Qg (Typ.) • 100 % Rg Tested • 100 % UIS Tested 2.3 nC

Si3459BDV

Abstract: Si3459BDV-T1-E3 804-30 mosfet 23 Tsop-6
Contextual Info: New Product Si3459BDV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.216 at VGS = - 10 V - 2.9 0.288 at VGS = - 4.5 V - 2.5 VDS (V) - 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 4.4 nC APPLICATIONS

Si7892BDP

Abstract: Si7892BDP-T1-E3 Si7892BDP-T1-GE3
Contextual Info: Si7892BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0042 at VGS = 10 V 25 0.0057 at VGS = 4.5 V 22 Qg (Typ.) 27 • Halogen-free available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

74460

Abstract: SiA811DJ-T1-GE3 SC-70-6 SiA811DJ
Contextual Info: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET

Si7366DP-T1-E3

Abstract: Si7366DP Si7366DP-T1-GE3
Contextual Info: Si7366DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 20 0.009 at VGS = 4.5 V 16 • Halogen-free available • TrenchFET Power MOSFET • Qg Optimized RoHS COMPLIANT APPLICATIONS

Si2301

Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

Contextual Info: Si7358ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0042 at VGS = 10 V 23 0.0059 at VGS = 4.5 V 20 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFET RoHS COMPLIANT

SIA450DJ

Contextual Info: New Product SiA450DJ Vishay Siliconix N-Channel 240-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: Si7856ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0037 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 39 PowerPAK SO-8 • Halogen-free available Available • TrenchFET Power MOSFET RoHS*

Contextual Info: Si7886ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0040 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 47 • Halogen-free available • TrenchFET Power MOSFET RoHS COMPLIANT • Optimized for “Low Side” Synchronous