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    NVD4 Search Results

    NVD4 Datasheets (20)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NVD-4
    Electronic Devices DIODE FAST RECOVERY RECTIFIER 1200V 0.005A Original PDF 47.94KB 2
    NVD-4
    Electronic Devices Rectifier Diodes and Arrays Scan PDF 65.97KB 2
    NVD4804NT4G
    On Semiconductor NTD4804N - Power MOSFET 30V 117A 4 mOhm Single N-Channel DPAK Original PDF 155.85KB 9
    NVD4804NT4G
    ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A DPAK Original PDF 8
    NVD4804NT4G-VF01
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 14A DPAK Original PDF 93.22KB
    NVD4805NT4G
    On Semiconductor NVD4805 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 155.96KB 8
    NVD4806NT4G
    On Semiconductor NVD4806N - Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK Original PDF 151.85KB 8
    NVD4806NT4G-VF01
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 76A DPAK Original PDF 133.55KB
    NVD4808NT4G
    On Semiconductor NVD4808 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 151.73KB 8
    NVD4809NHT4G
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 58A DPAK Original PDF 114.32KB
    NVD4809NT4G
    On Semiconductor NVD4809N - Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK Original PDF 150.55KB 9
    NVD4810NT4G
    On Semiconductor NVD4810 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 146.6KB 7
    NVD4810NT4G-TB01
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK Original PDF 78.97KB
    NVD4810NT4G-VF01
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK Original PDF 84.08KB
    NVD4813NHT4G
    On Semiconductor NVD4813NH - Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK Original PDF 146.8KB 7
    NVD4815NT4G
    On Semiconductor NVD4815N - Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK Original PDF 152.06KB 8
    NVD4856NT4G
    On Semiconductor NVD4856 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 153.62KB 8
    NVD4856NT4G-VF01
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 89A DPAK Original PDF 135.46KB
    NVD4C05NT4G
    onsemi MOSFET N-CH 30V DPAK-3 Original PDF 230.84KB
    NVD4C05NT4G
    onsemi MOSFET N-CH 30V DPAK-3 Original PDF 187.36KB
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    NVD4 Price and Stock

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    onsemi NVD4C05NT4G

    MOSFET N-CH 30V DPAK-3
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    Mouser Electronics NVD4C05NT4G 53
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    Verical NVD4C05NT4G 3,895 314
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    Rochester Electronics NVD4C05NT4G 3,895 1
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    onsemi NVD4804NT4G

    MOSFET N-CH 30V 14.5A/124A DPAK
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    Rochester Electronics NVD4804NT4G 12,500 1
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    Vyrian NVD4804NT4G 1,235
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    onsemi NVD4808NT4G

    MOSFET N-CH 30V 10A/63A DPAK
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    Verical NVD4808NT4G 24,748 1,501
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    Rochester Electronics NVD4808NT4G 24,748 1
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    onsemi NVD4806NT4G

    MOSFET N-CH 30V 76A DPAK
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    Avnet Americas NVD4806NT4G Reel 2,500
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    Verical () NVD4806NT4G 30,000 743
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    NVD4806NT4G 6,944 743
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    NVD4806NT4G 1,735 743
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    Rochester Electronics NVD4806NT4G 38,679 1
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    FLIP ELECTRONICS NVD4806NT4G

    N-CHANNEL 30 V 11.3A (TA), 79A (
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    NVD4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original
    NTD4806N, NVD4806N NTD4806N/D PDF

    4813NH

    Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
    Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original
    NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet PDF

    PPAP

    Abstract: 4810N
    Contextual Info: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original
    NTD4810N, NVD4810N AEC-Q101 NTD4810N/D PPAP 4810N PDF

    Contextual Info: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original
    NTD4810N, NVD4810N NTD4810N/D PDF

    4806n

    Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
    Contextual Info: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original
    NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad PDF

    4856ng

    Abstract: NTD4856NT4G
    Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original
    NTD4856N, NVD4856N AEC-Q101 NTD4856N/D 4856ng NTD4856NT4G PDF

    56NG mosfet

    Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original
    NTD4856N, NVD4856N NTD4856N/D 56NG mosfet PDF

    Contextual Info: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


    Original
    NTD4809N, NVD4809N NTD4809N/D PDF

    Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original
    NTD4804N, NVD4804N NTD4804N/D PDF

    369AA

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    NTD4805N, NVD4805N AEC-Q101 NTD4805/D 369AA PDF

    Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original
    NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D PDF

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    NTD4805N, NVD4805N AEC-Q101 NTD4805N/D PDF

    Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original
    NTD4856N, NVD4856N NTD4856N/D PDF

    Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD4808N, NVD4808N NTD4808N/D PDF

    Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original
    NTD4813NH, NVD4813NH NTD4813NH/D PDF

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    NTD4805N, NVD4805N NTD4805N/D PDF

    Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD4808N, NVD4808N NTD4808N/D PDF

    NVD4808N

    Contextual Info: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD4808N, NVD4808N AEC-Q101 NTD4808N/D PDF

    Contextual Info: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD4813NH, NVD4813NH NTD4813NH/D PDF

    Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original
    NTD4809NH, NVD4809NH NTD4809NH/D PDF

    Contextual Info: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD4805N, NVD4805N NTD4805N/D PDF

    Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    NTD4815N, NVD4815N NTD4815N/D PDF

    48 04NG

    Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
    Contextual Info: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original
    NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4 PDF

    4815NG

    Abstract: NTD4815N
    Contextual Info: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N


    Original
    NTD4815N, NVD4815N AEC-Q101 NTD4815N/D 4815NG NTD4815N PDF