06N80 Search Results

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Laird, A DuPont Business HI1206N800R-10 FERRITE BEAD 80 OHM 1206 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HI1206N800R-10	Digi-Reel	62,739		1	1 $0.24 10 $0.17 100 $0.1179 1000 $0.07795 10000 $0.07795	Buy Now
	HI1206N800R-10	Cut Tape	62,739		1	1 $0.24 10 $0.17 100 $0.1179 1000 $0.07795 10000 $0.07795	Buy Now
	HI1206N800R-10	Reel	60,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05975	Buy Now
Newark ()	HI1206N800R-10	Cut Tape	2,778		10	1 - 10 $0.137 100 $0.124 1000 $0.081 10000 $0.081	Buy Now
	HI1206N800R-10	Reel			3,000	1 $0.057 10 $0.057 100 $0.057 1000 $0.057 10000 $0.056	Buy Now
Bristol Electronics ()	HI1206N800R-10		2,998		23	1 - 10 - 100 $0.1125 1000 $0.0675 10000 $0.045	Buy Now
	HI1206N800R-10		1,066			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	HI1206N800R-10	Reel		12 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Asia	HI1206N800R-10			11 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Sager	HI1206N800R-10				10,000	1 - 10 - 100 - 1000 - 10000 $0.0663	Buy Now
Infineon Technologies AG SPA06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA06N80C3XKSA1	Tube	11,659		1	1 $1.97 10 $1.97 100 $0.9761 1000 $0.75288 10000 $0.75288	Buy Now
Avnet Americas	SPA06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.67665 10000 $0.66624	Buy Now
Mouser Electronics	SPA06N80C3XKSA1		629			1 $2.06 10 $1.49 100 $1.18 1000 $0.851 10000 $0.782	Buy Now
Newark	SPA06N80C3XKSA1	Bulk	130		1	1 $2.06 10 $1.49 100 $1.18 1000 $0.851 10000 $0.782	Buy Now
Rutronik	SPA06N80C3XKSA1	Tube	500		50	1 - 10 - 100 $0.9405 1000 $0.7524 10000 $0.7255	Buy Now

Chip One Stop	SPA06N80C3XKSA1	Tube	197	0 Weeks, 1 Days	1	1 $1.81 10 $1.42 100 $0.927 1000 $0.737 10000 $0.737	Buy Now
Component Electronics, Inc	SPA06N80C3XKSA1		1,461			1 $2.31 10 $2.31 100 $1.73 1000 $1.5 10000 $1.5	Buy Now
EBV Elektronik	SPA06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPA06N80C3XKSA1		500		1	1 - 10 - 100 - 1000 $2.7 10000 $2.7	Buy Now
Vyrian	SPA06N80C3XKSA1		1,904			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA06N80C3XKSA1		9,100			1 - 10 - 100 $1.2646 1000 $1.0275 10000 $1.0275	Buy Now
Infineon Technologies AG SPP06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XKSA1	Tube	5,512		1	1 $1.69 10 $1.69 100 $0.9211 1000 $0.80674 10000 $0.76061	Buy Now
Avnet Americas	SPP06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.66154 10000 $0.63552	Buy Now
Mouser Electronics	SPP06N80C3XKSA1		1,119			1 $1.43 10 $1.25 100 $0.825 1000 $0.76 10000 $0.733	Buy Now
Newark	SPP06N80C3XKSA1	Bulk			1	1 $1.84 10 $1.66 100 $1.25 1000 $1.17 10000 $1.15	Buy Now
Rochester Electronics	SPP06N80C3XKSA1		16,358		1	1 - 10 - 100 $0.9961 1000 $0.8268 10000 $0.7371	Buy Now

Ameya Holding Limited	SPP06N80C3XKSA1		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rutronik	SPP06N80C3XKSA1	Tube	550		50	1 - 10 - 100 $0.9405 1000 $0.7524 10000 $0.7255	Buy Now
Chip One Stop	SPP06N80C3XKSA1	Tube	476	0 Weeks, 1 Days	1	1 $1.5 10 $0.879 100 $0.815 1000 $0.707 10000 $0.707	Buy Now
EBV Elektronik	SPP06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPP06N80C3XKSA1		4,783			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP06N80C3XKSA1		3,630			1 - 10 - 100 $2.0172 1000 $1.6918 10000 $1.6918	Buy Now
Infineon Technologies AG SPD06N80C3ATMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPD06N80C3ATMA1	Digi-Reel	2,048		1	1 $2 10 $1.306 100 $1.0628 1000 $0.83645 10000 $0.83645	Buy Now
	SPD06N80C3ATMA1	Cut Tape	2,048		1	1 $2 10 $1.306 100 $1.0628 1000 $0.83645 10000 $0.83645	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.68338	Buy Now
Avnet Americas	SPD06N80C3ATMA1	Reel		52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.60741	Buy Now
Mouser Electronics	SPD06N80C3ATMA1		29,715			1 $1.96 10 $1.28 100 $1.04 1000 $0.767 10000 $0.71	Buy Now
Newark ()	SPD06N80C3ATMA1	Cut Tape			5	1 $1.96 10 $1.28 100 $1.04 1000 $0.934 10000 $0.934	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.8	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.844	Buy Now
Rochester Electronics	SPD06N80C3ATMA1		245		1	1 - 10 - 100 $0.9282 1000 $0.7704 10000 $0.6869	Buy Now

Ameya Holding Limited	SPD06N80C3ATMA1		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rutronik	SPD06N80C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.7237	Buy Now
Chip One Stop	SPD06N80C3ATMA1	Cut Tape	1,798	0 Weeks, 1 Days	1	1 $2.06 10 $1.29 100 $1.02 1000 $0.836 10000 $0.836	Buy Now
EBV Elektronik	SPD06N80C3ATMA1			53 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPD06N80C3ATMA1		10,918			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD06N80C3ATMA1		27,996			1 - 10 - 100 $1.2345 1000 $1.003 10000 $1.003	Buy Now
Infineon Technologies AG SPP06N80C3XK MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XK	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPP06N80C3XK		21,256			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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06N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
06n80 Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C	PDF
06N80C3 Abstract: 06N80 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80	PDF
diode 71A Abstract: SPA06N80C3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3	PDF
06n80c3 Abstract: SPA06N80C3 Contextual Info: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3	PDF
SMD Transistor g15 Abstract: transistor A25 SMD transistor SMD g15 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15	PDF
06n80c3 Abstract: JESD22 PG-TO220-3 SPA06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3	PDF
Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3	PDF
Contextual Info: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes	Original	FMH06N80E MS5F07479 H04-004-05 H04-004-03	PDF
06n80c3 Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3	PDF
06n80c3 Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS	PDF
06n80c3 Abstract: P-TO252 SPD06N80C3 Contextual Info: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3	PDF
06n80 Abstract: Q67040-S4352 06n8 06n80c3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3	PDF
06n80c3 Abstract: SPP06N80C3 06n80 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80	PDF
Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3	PDF

Contextual Info: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3	PDF
SMD Transistor g15 Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3	PDF
06N80 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80	PDF
TO-252 Contextual Info: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3	PDF
06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80C3	PDF
smd transistor marking 12W Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98 Contextual Info: Preliminary data 06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated	Original	SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
SPD06N80C3 Abstract: 06N80C3 P-TO252 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252	PDF

06N80 Search Results

06N80 Price and Stock

Laird, A DuPont Business HI1206N800R-10

Infineon Technologies AG SPA06N80C3XKSA1

Infineon Technologies AG SPP06N80C3XKSA1

Infineon Technologies AG SPD06N80C3ATMA1

Infineon Technologies AG SPP06N80C3XK

06N80 Datasheets Context Search

06n80

06N80C3

diode 71A

06n80c3

SMD Transistor g15

06n80c3

06n80c3

06n80c3

06n80c3

06n80

06n80c3

SMD Transistor g15

06N80

TO-252

PEF 24628

06N80C3

smd transistor marking 12W

BCM 4336

SPD06N80C3