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Infineon Technologies AG SPA06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA06N80C3XKSA1	Tube	11,659		1	1 $1.5 10 $1.5 100 $0.793 1000 $0.76814 10000 $0.76814	Buy Now
Avnet Americas	SPA06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.67665 10000 $0.66624	Buy Now
Mouser Electronics	SPA06N80C3XKSA1		629			1 $2.06 10 $1.49 100 $1.18 1000 $0.851 10000 $0.782	Buy Now
Newark	SPA06N80C3XKSA1	Bulk	130		1	1 $2.06 10 $1.49 100 $1.18 1000 $0.851 10000 $0.782	Buy Now
Rochester Electronics	SPA06N80C3XKSA1				1	1 - 10 - 100 $1.02 1000 $0.8488 10000 $0.7567	Buy Now

Rutronik	SPA06N80C3XKSA1	Tube	500		50	1 - 10 - 100 $0.9356 1000 $0.7485 10000 $0.7218	Buy Now
Chip One Stop	SPA06N80C3XKSA1	Tube	197	0 Weeks, 1 Days	1	1 $0.603 10 $0.603 100 $0.603 1000 $0.603 10000 $0.603	Buy Now
EBV Elektronik	SPA06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SPA06N80C3XKSA1				500	1 - 10 - 100 - 1000 $0.9035 10000 $0.8645	Buy Now
Win Source Electronics	SPA06N80C3XKSA1		9,100			1 - 10 - 100 $1.2646 1000 $1.0275 10000 $1.0275	Buy Now
Infineon Technologies AG SPP06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XKSA1	Tube	5,507		1	1 $1.53 10 $1.53 100 $0.8497 1000 $0.75819 10000 $0.73338	Buy Now
Avnet Americas	SPP06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.66154 10000 $0.63552	Buy Now
Mouser Electronics	SPP06N80C3XKSA1		1,119			1 $1.43 10 $1.25 100 $0.825 1000 $0.76 10000 $0.733	Buy Now
Newark	SPP06N80C3XKSA1	Bulk			1	1 $1.84 10 $1.66 100 $1.25 1000 $1.17 10000 $1.15	Buy Now
Rochester Electronics	SPP06N80C3XKSA1		16,358		1	1 - 10 - 100 $0.9961 1000 $0.8268 10000 $0.7371	Buy Now

Ameya Holding Limited	SPP06N80C3XKSA1		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rutronik	SPP06N80C3XKSA1	Tube	550		50	1 - 10 - 100 $0.9356 1000 $0.7485 10000 $0.7218	Buy Now
Chip One Stop	SPP06N80C3XKSA1	Tube	476	0 Weeks, 1 Days	1	1 $0.725 10 $0.423 100 $0.815 1000 $0.707 10000 $0.707	Buy Now
EBV Elektronik	SPP06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SPP06N80C3XKSA1				500	1 - 10 - 100 - 1000 $0.975 10000 $0.9425	Buy Now
Win Source Electronics	SPP06N80C3XKSA1		3,630			1 - 10 - 100 $2.0172 1000 $1.6918 10000 $1.6918	Buy Now
Infineon Technologies AG SPD06N80C3ATMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPD06N80C3ATMA1	Cut Tape	2,048		1	1 $2 10 $1.306 100 $1.0628 1000 $0.83645 10000 $0.83645	Buy Now
	SPD06N80C3ATMA1	Digi-Reel	2,048		1	1 $2 10 $1.306 100 $1.0628 1000 $0.83645 10000 $0.83645	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.7301	Buy Now
Avnet Americas	SPD06N80C3ATMA1	Reel		52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.60741	Buy Now
Mouser Electronics	SPD06N80C3ATMA1		29,715			1 $1.96 10 $1.28 100 $1.04 1000 $0.767 10000 $0.71	Buy Now
Newark ()	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.8	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.844	Buy Now
	SPD06N80C3ATMA1	Cut Tape			5	1 $1.96 10 $1.28 100 $1.04 1000 $0.828 10000 $0.828	Buy Now
Rochester Electronics	SPD06N80C3ATMA1		245		1	1 - 10 - 100 $0.9282 1000 $0.7704 10000 $0.6869	Buy Now

Ameya Holding Limited	SPD06N80C3ATMA1		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rutronik	SPD06N80C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.7199	Buy Now
Chip One Stop	SPD06N80C3ATMA1	Cut Tape	1,798	0 Weeks, 1 Days	1	1 $1.95 10 $1.23 100 $0.969 1000 $0.787 10000 $0.787	Buy Now
EBV Elektronik	SPD06N80C3ATMA1			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SPD06N80C3ATMA1		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.832	Buy Now
Win Source Electronics	SPD06N80C3ATMA1		27,996			1 - 10 - 100 $1.2345 1000 $1.003 10000 $1.003	Buy Now
Infineon Technologies AG SPP06N80C3XK MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XK	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPD06N80C3BTMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPD06N80C3BTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD06N80C3BTMA1	Digi-Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD06N80C3BTMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ameya Holding Limited	SPD06N80C3BTMA1		3,022			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	SPD06N80C3BTMA1		842			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPD06N80C3BTMA1		1,203			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD06N80C3BTMA1		27,996			1 - 10 - 100 $1.2037 1000 $0.8025 10000 $0.8025	Buy Now

Find more 06N80C3 price and stock on Findchips.com

06N80C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
06n80 Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C	PDF
06N80C3 Abstract: 06N80 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80	PDF
diode 71A Abstract: SPA06N80C3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3	PDF
06n80c3 Abstract: SPA06N80C3 Contextual Info: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3	PDF
SMD Transistor g15 Abstract: transistor A25 SMD transistor SMD g15 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15	PDF
06n80c3 Abstract: JESD22 PG-TO220-3 SPA06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3	PDF
Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3	PDF
06n80c3 Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3	PDF
06n80c3 Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS	PDF
06n80c3 Abstract: P-TO252 SPD06N80C3 Contextual Info: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3	PDF
06n80 Abstract: Q67040-S4352 06n8 06n80c3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3	PDF
06n80c3 Abstract: SPP06N80C3 06n80 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80	PDF
Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3	PDF
Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3	PDF

SMD Transistor g15 Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3	PDF
06N80 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80	PDF
TO-252 Contextual Info: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3	PDF
06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80C3	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
SPD06N80C3 Abstract: 06N80C3 P-TO252 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252	PDF
06N80C3 Abstract: Q67040-S4351 SPP06N80C3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated	Original	SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 Q67040-S4351 SPP06N80C3	PDF
06N80C3 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06N80C3	PDF

06N80C3 Search Results

06N80C3 Price and Stock

Infineon Technologies AG SPA06N80C3XKSA1

Infineon Technologies AG SPP06N80C3XKSA1

Infineon Technologies AG SPD06N80C3ATMA1

Infineon Technologies AG SPP06N80C3XK

Infineon Technologies AG SPD06N80C3BTMA1

06N80C3 Datasheets Context Search

06n80

06N80C3

diode 71A

06n80c3

SMD Transistor g15

06n80c3

06n80c3

06n80c3

06n80c3

06n80

06n80c3

SMD Transistor g15

06N80

TO-252

PEF 24628

06N80C3

BCM 4336

SPD06N80C3

06N80C3

06N80C3