Untitled
Abstract: No abstract text available
Text: K6F2008V2M, K6F2008S2M, K6F2008R2M Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 2, 1996 Advance 0.1 Revise - Remove sTSOP1 from product
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K6F2008V2M,
K6F2008S2M,
K6F2008R2M
256Kx8
KM68F2000
100ns)
0820F)
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K6X1008C2D-GF55
Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
Text: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.
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K6X1008C2D
128Kx8
32-TSOP1-0820R
0820F)
K6X1008C2D-GF55
K6X1008C2D-TF55
K6X1008C2D-TB55
K6X1008C2D-F
samsung k6x1008c2d
K6X1008C2D-TF70
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K6T1008C2E-GB70
Abstract: K6T1008C2E-TB55
Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.
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K6T1008C2E
128Kx8
0820F)
K6T1008C2E-GB70
K6T1008C2E-TB55
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KM68V512ALTE-10L
Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.
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KM68V512A,
KM68U512A
64Kx8
KM68V512A
32-sTSOP
KM68V512ALTE-10L
64Kx8 CMOS RAM
KM68U512ALE-L
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EN25QH
Abstract: 1AEF00 cFeon* SPI Flash
Text: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages
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EN25QH256
M-bit/32
K-byte/131
80MHz
50MHz
EN25QH
1AEF00
cFeon* SPI Flash
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K6X1008
Abstract: K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70
Text: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.
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K6X1008T2D
128Kx8
32-TSOP1-0820R,
32-TSOP1-0813
32-SOP-525
32-TSOP1-0820F
0820F)
K6X1008
K6X1008T2D-B
K6X1008T2D-F
K6X1008T2D-Q
SAMSUNG K6X1008T2D-TF70
K6X1008T2D-PF70
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KM68S2000LT-12L
Abstract: KM68S2000LT-15L
Text: KM68S2000 Family Preliminary CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Date Remark Initial draft September 30, 1997 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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KM68S2000
256Kx8
256Kx8
KM68S2000LT-12L
KM68S2000LT-15L
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K6T4008V1C-VF70
Abstract: K6T4008U1C K6T4008V1C K6T4008V1C-B KM68U4000C
Text: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns
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K6T4008V1C,
K6T4008U1C
512Kx8
KM68U4000C
85/100ns
70/85/100ns
32-TSOP1-0820
32-TSOP1-0813
K6T4008V1C-VF70
K6T4008V1C
K6T4008V1C-B
KM68U4000C
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package tsop1
Abstract: K6T2008U2M K6T2008V2M K6T2008V2M-B KM68U2000 KM68V2000
Text: K6T2008V2M, K6T2008U2M Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 30, 1997 Advance 0.1 Initial draft April 7, 1997 Preliminary 1.0 Finalize
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K6T2008V2M,
K6T2008U2M
256Kx8
KM68V2000
70/85ns
KM68V2000I,
KM68U2000,
KM68U2000I
85/100ns
047MAX
package tsop1
K6T2008V2M
K6T2008V2M-B
KM68U2000
KM68V2000
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K6T2008U2A
Abstract: K6T2008U2A-B K6T2008U2A-F K6T2008V2A K6T2008V2A-B K6T2008V2A-F K6T2008V2A-YF70
Text: K6T2008V2A, K6T2008U2A Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target May 26, 1998 Advance 1.0 Finalize October 8, 1998 Final 2.0 Revised - Add FBGA type package
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K6T2008V2A,
K6T2008U2A
256Kx8
85/Typ.
25/Typ.
K6T2008U2A-B
K6T2008U2A-F
K6T2008V2A
K6T2008V2A-B
K6T2008V2A-F
K6T2008V2A-YF70
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KM68U2000A
Abstract: KM68U2000ALI-L KM68U2000AL-L KM68V2000A KM68V2000ALI-L KM68V2000AL-L KM68V2000ALTGI-8L
Text: KM68V2000A, KM68U2000A Family CMOS SRAM Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target May 26, 1998 Advance 1.0 Finalize October 8, 1998 Final 2.0 Revised - Add FBGA type package
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KM68V2000A,
KM68U2000A
256Kx8
85/Typ.
25/Typ.
KM68U2000ALI-L
KM68U2000AL-L
KM68V2000A
KM68V2000ALI-L
KM68V2000AL-L
KM68V2000ALTGI-8L
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km681000clg-5l
Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA
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KM681000C
100ns
0820R)
km681000clg-5l
KM681000CLP-7
KM681000CLP-7L
KM681000CLT-5L
KM681000CL
KM681000CLI
KM681000CL-L
KM681000CLP7L
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68 1103
Abstract: KM681000BL A14F
Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced
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KM681000BL
128Kx8
385mW
KM681OOOBLP/BLP-L
600mil)
KM681000BLG/BLG-L:
525mil)
KM681OOOBLT/BLT-L
0820F)
KM681000BLR/BLR-L:
68 1103
A14F
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Untitled
Abstract: No abstract text available
Text: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)
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KM681OOOBLI/BLI-L
100ns
110mW
KM681000BLGI/BLG-L
32-SOP-525
KM681000BLTI/BLTI-L
32-TSOP1-0820F
KM681000BLRI/BLRI-L
32-TSOP1-0820R
KM681000BLI/BLI-L
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply
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KM681000BL
128Kx8
110fiW
385mW
KM681OQOBLP/BLP-L
600mil)
KM681000BLG/BLG-L:
525mil)
KM681000BLT/BLT-L
0820F)
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Untitled
Abstract: No abstract text available
Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product
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KM681000B
0820F)
0820R)
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km68512lg
Abstract: km68512l 68512 KM68512LT
Text: KM68512ÜL-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 1(VW (typ.) L-Version 5(iW (typ.) LL-Version Operating : 35mW (typ.)
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KM68512
100ns
KM68512LG/LG-L:
32-pin
525mil)
KM68512LT/LT-L:
KM68512L/L-L
288-bit
km68512lg
km68512l
68512
KM68512LT
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and
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KM68V1000E,
KM68U1000E
128Kx8
1000E
525mil)
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Untitled
Abstract: No abstract text available
Text: K M 6 8 V 2 0 0 0 , K M 6 8 U 2 0 0 0 Fami l y CM OS SRAM Dacuro ent T\t\ 2 56 Kx 8 bit Low Power and Low Voltage C M O S Static RAM R e v is io n N o . H is to ry D raft D ata R em ark 0.0 Design target January 30th 1997 Advance 0.1 Initial draft April 7th 1997
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KM68V2000
70/85ns
KM68V2000I,
68U2000,
KM68U2000I
85/100ns
0820F)
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Untitled
Abstract: No abstract text available
Text: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation
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KM681OOOBLI/BLI-L
100ns
110mW
KM681000BLGI/BLG-L
32-SOP-525
KM681000BLTI/BLTI-L
32-TSOP1-0820F
KM681000BLRI/BLRI-L
32-TSOP1-0820R
KM681000BLI/BLI-L
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Untitled
Abstract: No abstract text available
Text: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8
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KM68FU2000,
KM68FS2000,
KM68FR2000
256Kx8
KM68FU2000
KM68FS2000
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM68S4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Data Remark June 15, 1998 Prelim inary The attached datasheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM68S4000C
512Kx8
512Kx8
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KM681000AL-L
Abstract: KM681000ALT
Text: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply
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KM681000AL/KM681OOOAL-L
120ns
81000A
KM681OOOALG/ALG-L:
KM681000ALT/ALT-L
KM681OOOALR/ALR-L:
KM681OOOAL/AL-L
576-bit
KM681000AL/KM681000AL-L
KM681000AL-L
KM681000ALT
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2183A
Abstract: No abstract text available
Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V
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KM68V1000C,
KM68U1000C
128Kx8
KM68V1000C
32-SOP,
32-TSOP
32-sTSOP
2183A
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