TP2020L
Abstract: bss92 VP2020L TP1220L
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4
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TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
O-226AA)
P-37994--Rev.
08-Aug-94
TP2020L
bss92
VP2020L
TP1220L
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TO-237
Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Text: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V
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VN10/0605/0610/2222
VN10LE
VN10LM
VN0605T
VN0610LL
VN2222LL
VN2222LM
TO-237
vn0605t transistor
VN10
VN10 application
VN0605T
70212
VN2222LM
2222
400-125
VN10LE
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Siliconix JFET Dual
Abstract: SST404 JFET u401 Siliconix Dual JFETs Siliconix JFET Duals Siliconix JFETs Dual Siliconix N-Channel JFET "N-Channel JFET" 2N5911 Dual N-Channel JFET
Text: SST/U401 Series Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) U401 –0.5 to –2.5 –40 1 –2 5 SST/U404 –0.5 to –2.5 –40 1
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SST/U401
SST404
SST406
SST/U404
SST/U406
AN106,
P-37947--Rev.
08-Aug-94
Siliconix JFET Dual
SST404
JFET u401
Siliconix Dual JFETs
Siliconix JFET Duals
Siliconix JFETs Dual
Siliconix N-Channel JFET
"N-Channel JFET"
2N5911
Dual N-Channel JFET
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VN0808M
Abstract: VQ1006P VN0808L
Text: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)
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VN0808L/M,
VQ1006P
VN0808L
VN0808M
O-226AA)
P-37992--Rev.
08-Aug-94
VN0808M
VQ1006P
VN0808L
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8L820
Abstract: ltzl
Text: SEPTEMBER 13, 1994 TEST REPORT #94340 QUALIFICATION TESTING CLP SERIES CONNECTOR SAMTEC CORPORATION APPROVED BY: THOMAS PEEL DIRECTOR OF TEST PROGRAM DEVELOPMENT CONTECH RESEARCH, INC. 1 Contech Research This is to certify that the evaluation described herein was
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MIL-STD-45662,
8L820
ltzl
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2N6659
Abstract: 2N6660 VQ1004J VQ1004P
Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660
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2N6659/2N6660,
VQ1004J/P
2N6659
2N6660
O-205AD)
P-37994--Rev.
08-Aug-94
2N6659
2N6660
VQ1004J
VQ1004P
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TO-237
Abstract: VN0606L VN66AFD VN0606M TN0601L
Text: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2
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TN0601L,
VN0606L/M,
VN66AFD
VN0606L
TN0601L
VN0606M
O-226AA,
O-237)
P-37992--Rev.
TO-237
VN0606L
VN66AFD
VN0606M
TN0601L
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2N6659
Abstract: 2N6660 VQ1004J VQ1004P
Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660
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2N6659/2N6660,
VQ1004J/P
2N6659
2N6660
O-205AD)
P-37994--Rev.
08-Aug-94
2N6659
2N6660
VQ1004J
VQ1004P
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equivalent of BS170
Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P
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2N7000/7002,
VQ1000J/P,
BS170
2N7000
2N7002
VQ1000P
VQ1000J
Capacitan02,
equivalent of BS170
2n7002 siliconix
2n7000 equivalent
EQUIVALENT FOR bs170
MARKING bs170
2n7000 data sheet
VQ1000J
codes marking 2N7002
SILICONIX 2N7002
2N7002 MARKING
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VN0808M
Abstract: VN0808L VQ1006P
Text: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)
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VN0808L/M,
VQ1006P
VN0808L
VN0808M
O-226AA)
P-37992--Rev.
08-Aug-94
VN0808M
VN0808L
VQ1006P
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tr-611
Abstract: No abstract text available
Text: q4340 This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Samtec Corporation of New Albany, IN, who was the test sponsor. All equipment and measuring instruments used during testing were
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q4340
MIL-STD-45662,
tr-611
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VN0300M
Abstract: TN0201L TN0401L VN0300L
Text: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V
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TN0201L/0401L,
VN0300L/M
TN0201L
TN0401L
VN0300L
VN0300M
O-226AA)
P-37992--Rev.
08-Aug-94
VN0300M
TN0201L
TN0401L
VN0300L
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Untitled
Abstract: No abstract text available
Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660
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2N6659/2N6660,
VQ1004J/P
2N6659
2N6660
O-205AD)
P-37994--Rev.
08-Aug-94
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Untitled
Abstract: No abstract text available
Text: 3 4 DRAWING MADE IN T H I R D ANGLE P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. 0 C O P Y R I G H T 19 RELEASED FOR P UB LICATIO N BY ANP I NCORRORATED . A L L I N T E R N A T I O N A L 2 <3> , 19 LOC G RIGHTS RESERVED. DI 5T 14 R EV I 5 I ON! ZONE
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27JUL94
Qi-003
i-003
i-002
62mm2
050-5J
B-152
NIL-T-10727
05JUL94
08AUG94
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Untitled
Abstract: No abstract text available
Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP LOC ,19 INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. 6 DIST REVISIONS 14 P F ZONE LTR DESCRIPTION DATE D REVISED 8 REDRAWN PER 0720-0055-94
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05JUL94
LR7189
08AUG94
0QAUG94
08AUG9A
05-JU
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Untitled
Abstract: No abstract text available
Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION T H I S DRAWING IS UNPUBLISHED. C COPYRIGHT 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LOC ,19 DIST 14 6 ALL INTERNATIONAL RIGHTS RESERVED. REVISIO NS P F ZONE LTR DESCRIPTION DATE B REVISED 8 REDRAWN PER 0720-0055-94
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05JUL94
LR7189
05JUL34
08AUG94
0QAUG94
08AUG9A
23/dMq]
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E13288
Abstract: LR7189 MIL-T-7928 QQ-S-365
Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS RESERVED. 6 DIST REVISIONS 14 P F ZONE LTR DESCRIPTION DATE APPD B REVISED S REDRAWN PER 0720-0055-94
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06JUL9-4
E13288
LR7189
MIL-T-7928
65mm2
B-152
QQ-S-365
06JUL34
08AUG94
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MOSFET 2n6659
Abstract: 2N6660 SILICONIX
Text: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS 2N6659 Min (V) 2N 6660 60 VQiOOU/P Max (Q) V GS(th) (V ) Id (A) 1.8 @ V Gs = 10 V 0.8 to 2 1.4 3 @ V GS= 10 V 0.8 to 2 1.1 3.5 @ V GS= 10 V 0.8 to 2.5
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2N6659/2N6660,
VQ1004J/P
2N6659
P-37994--
08-Aug-94
MOSFET 2n6659
2N6660 SILICONIX
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0808L
Abstract: VN0808M TO-226A to-237
Text: Tem ic VN0808L/M, VQ1006P S e m i c o n d u c to r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS M i n (V ) rDS(on) M a x ( Q ) V GS (th )(V ) 4 @ VG S = 10 V 0.8 to 2 0.3 4 @ V c s - 10 V 0.8 to 2 0.33 4 @ V q S = 10 V
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VN0808L/M,
VQ1006P
0808L
VN0808M
1006P
P-37992--
08-Aug-94
P-37992--Rev
TO-226A to-237
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539J
Abstract: E13288 LR7189 MIL-T-10727 330301
Text: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION COPYRIGHT 19 AMP BY INCORPORATED. LOC ,19 G ALL INTERNATIONAL RIGHTS RESERVED. 13.43 R [. 531 J MAX WASHER D DIST 14 P F ZONE LTR DESCRIPTION C REVISED
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0L20-0045-97
24MAR97
MIL-T-10727
MIL-G-45204
QQ-N-290
B-152
04AUG94
08AUG94
1471-E
539J
E13288
LR7189
330301
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