09JUL0 Search Results

Contextual Info: 6 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 4 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION P P O S I T I ON #1 REVISED P ER EC 0S1B-0020-01 DD 09JUL0 I ND I C A T O R

Contextual Info: 7 TH 5 DRAWING COPYRIGHT IS UNPUBLISHED. 19 RELEASED BY AMP INCORPORATED. ALL FOR P U B L I C A T I O N R IC 4 5 6 3 2 ,19 REVISIONS DI ST LOC HTS R E S E R V E D . AD 47 D ESCRIPTION P REVISED 09JUL0 PER EC 0S1B-0020-01 DD A ± . 0 0 8 [ 0 . 2] + - „ 0 0 0 | .

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. E COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC DIST REVISIONS 47 AD ALL RIGHTS RESERVED. P LTR DESCRIPTION F R E V I S E D P E R E C DATE 09JUL01 0 S 1 B - 0 0 2 0 - 0 1 DWN APVD J G DD A+.008 [0.2]

Contextual Info: 7 TH 5 D R A WI N G CO P Y R I G H T R E L E A S E D FOR P U B L I C A T I O N IS UN PU BL ISH ED. 19 BY AMP INCORP ORA TED . ALL RIC 6 4 5 3 2 ,19 DI ST LOC HTS RESER VED . AD REVI SI ONS 47 DESCRIPTION AB REVISED PER EC 0S1B-0020-01 DD 09JUL0 A ± .0 0 8 [0. 2]

Contextual Info: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 5 6 4 3 2 ,1 9 DI ST LOC R ES ER V ED . REVISIONS 47 AD DESCRIPTION REVISED POS I T I ON #1 P ER EC 0S1B-0020-01 DD 09JUL0 I NO I C A T OR

2s701

Contextual Info: 7 TH 5 DRAWING COPYRIGHT IS UNPUBLISHED. 19 RELEASED BY AMP INCORPORATED. ALL FOR P U B L I C A T I O N R IC 4 5 6 3 2 ,19 REVISIONS DI ST LOC HTS R E S E R V E D . AD 47 D ESCRIPTION M REVISED 09JUL0 PER EC 0S1B-0020-01 DD A ± . 0 0 8 [ 0 . 2] + - „ 0 0 0 | .

Amp 1-767007-3 mictor connector

Contextual Info: 6 7 TH 5 DRAWING COPYRIGHT IS UNPUBLISHED. 19 RELEASED BY AMP INCORPORATED. ALL FOR P U B L I C A T I O N R IC 4 5 3 2 ,19 REVISIONS DI ST LOC HTS R E S E R V E D . 47 AD D ESCRIPTION Z REVISED PER EC 0S1B-0020-01 DD 09JUL0 A ± . 0 0 8 [ 0 . 2] + - „ 0 0 0 | .

PROTECTION BAND

Contextual Info: 107-68202 Packaging Specification 09Jul09 Rev F MINI AMP-IN 1. PURPOSE 目的 Define the packaging specifiction and packaging method of Stamping for MINI AMP-IN. 订定 MINI AMP-IN 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

Contextual Info: 7 T H IS DRAWING 15 UNPUBLISHED. JÊL COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. , 6 4 5 2 3 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 47 AD DESCRIPTION P REVISED PER EC 0S1B-0020-01 DD 09JUL01 A±.008 [0 .2 ] + - . 0 0 0 . 0 r + 0 2 - -,

MOSFET SOT-23 marking code M2

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

5302D

Contextual Info: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

SQ2303ES

Abstract: marking code 604 SOT23
Contextual Info: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

SQ2318ES

Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

marking L4 mosfet sot23

Abstract: SI2304
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

si2301

Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1303DL-T1-gE3

Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Si2303CDS

Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI2333DS-T1-E3

Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

DG201BDQ-T1-E3

Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Si2315BDS-T1-E3

Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*

CW02M

Abstract: CW007 CW-2B-13 CW-2C-14 CW001 CW005 CW010
Contextual Info: CW Vishay Dale Wirewound Resistors, Commercial Coated, Axial Lead FEATURES • • • • • High performance for low cost High temperature silicone coating Complete welded construction Excellent stability in operation High power to size ratio STANDARD ELECTRICAL SPECIFICATIONS

MS27493-22D

Abstract: ms3198 MS2T493-22D MS27493
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R A LL C O PY R IG H T BY TYCO E LE C TR O N IC S 2 3 P U B L IC A T IO N - IN TERN A TIO N AL RIGHTS ,- LOC D IS T R E V IS IO N S R ESERVED. C O R P O R ATIO N . D E S C R IP T IO N REV WIRE