0G173 Search Results

Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

IRFS830

Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance

CF739 R

Abstract: CF739 siemens gaas fet
Contextual Info: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain

Contextual Info: • ^24^02^ 0G17320 244 MITSUBISHI RF POWER MODULE ■ M57799M 430-470MHZ, 7.5V, 6W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45 ± 1 421 <§> 2 - R 1 . 5 ± 0 .3 ¥ o + CT1 -€ D <3 <S> <5) 4>0.4 ± 0.2 PIN : 5±1 9±1 9+ 1 5 ± 1 8 .5 + 1

62703-F

Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Contextual Info: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure

Contextual Info: bEM' î fl S' î 0G17374 415 • MITSUBISHI RF POWER MODULE M67728 430-450MHZ, 12.5V, 60W, SSB MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN: CDPin : RF INPUT @VCC1 @VBB VCC 2 ®PO ®GND : 1st. DC SUPPLY : BASE BIAS SUPPLY : 2nd. DC SUPPLY

UPD1714G

Abstract: KS1160 DH 7177 lf324 upd1714 EVAKIT-1700 RN3A
Contextual Info: ~ NE C ELECTRONICS INC Tfl d F | L4275E5 QQ173SÌ. 3 | T~77'0$-0$ V UPD1714G Internal Prescaler, PLL synthesizer, and LCD driver Microcontroller The UPD1714G is a 4-bit CMOS microcontroller with prescaler t hat can input up to 150 MHz, PL L synthesizer, and 1/2 duty, 1/2

Contextual Info: INTERNATIONAL RECTIFIER b5E D • 4 Ô 5 5 45 2 0 0 1 7 3 0 b Û21 PD -2.255 International S Rectifier i 63 c m q . s e r i e s SCHOTTKY RECTIFIER 160 Amp Description/Features Major Ratings and Characteristics 163CMQ. Units Characteristics 160 A 80 to 100

Contextual Info: CXP507001 SONY Piggyback type CM OS 4-bit Single Chip Microcomputer Description The CXP50700 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP50712/CXP50716. 80 pin PQFP Ceramic

UPD1719G

Abstract: T-77 US281AS1700 SE-1700
Contextual Info: N E C ELECTRONICS INC Tfl dF|L:42752S 0D173S3 t D 7 ~ 7 '7 - 0 S '- 0 S UPD1719G Internal Prescaler, PLL Synthesizer, and LCD driver Microcontroller The uPD1719G is a 4-bit CMOS microcontroller with'prescaler that can input up to 150 MHz, PLL synthesizer, and 1/2 duty, 1/2

"SERIES MELPS 740"

Abstract: MELPS740 M3742 80P6N M37428RFS MELPS 740 MELPS-740 mcl plp cd controller M37428
Contextual Info: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.

J940

Contextual Info: PRELIMINARY IDT7016S/L HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM Integrated D evice Technology, Inc. FEA TU R ES: • Interrupt Flag • On-chip port arbitration logic • Full on-chip hardware support of sem aphore signaling between ports • Fully asynchronous operation from either port

Contextual Info: Data Sheet May 1995 a A T S T ~= ^ ar Microelectronics DSP1618 Digital Signal Processor Features • Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at

Contextual Info: Ordering number: EN2677C Monolithic Linear IC LA4700N No. 2677C SA iYO I 2-Channel 12W AF Power Amplifier for Car Stereos Functions • • • • • • • Package Dimensions unit : mm Standby switch function built in Pop noise suppressor built in Thermal shutdown circuit built in

M37413M6-XXXFP

Abstract: M37413M6H DG17351
Contextual Info: niTSUBISHKMICMPTR/MIPRC bl E J> bEM'IÔEÛ D G 17 31 ñ 70T « 1 1 1 1 4 M ITSUBISHI M ICROCOM PUTERS PRELIMINARY M 37 41 3 M 4 H X X X F P M 3 7 4 1 3M 6H X X X F P M 3 7 4 1 3 M 6 H X X X F P ) SIN G LE-C H IP 8-BIT CMOS M ICROCO M PU TER DESCRIPTION T h e M 3 7 4 1 3 M 4 H X X X FP Is a sin g le -c h ip m icro co m p uter d e ­

Contextual Info: M ITSUBISHKM ICM PTR/M IPR C M37428M4-XXXFP LIE J J> bSMTflSfl DD173S3 ÔD3 • f1I T4 MITSUBISHI SINGLE-CHIP 8 bit MICROCOMPUTERS M37428M4-XXXFP SINGLE-CHIP 8-bit MICROCONTROLLER PRELIMINARY SPECIFICATIONS April 1991 Rev. D MITSUBISHI ELECTRONICS AMERICA, INC.

Contextual Info: bSM'ìaS'ì 00173L3 b3 T • MITSUBISHI RF POWER MODULE M67713 220-225MHZ, 12.5V, 7W, FM PORTABLE RADIO PIN : P in ©VBB VCC1 @PO ®G N D : : : : : RF INPUT BASE BIAS SUPPLY DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted

IRF830

Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re

Contextual Info: SONY CXP508L4/508L6 CMOS 4-bit Single Chip Microcomputer Description The CXP508L4/508L6 is a CMOS 4-bit micro computer which consists of 4-bit CPU, ROM, RAM I/O port, 8-bit timer, 8-bit timer/counter, 18-bit tim base timer, 8-bit serial I/O, vector interruption, and

4275a5

Abstract: KS1160 uPD1719G US171AS1700 mvrd EVAKIT-1700 upd1719
Contextual Info: N E C E L E C T R O N I C S I NC Tfl D f F | b 4 S 7 5 2 5 OG173SB t i >- f D T^^-ÛS'-ÛS' . UPD1719G Internal Prescaler, PLL Synthesizer, and LCD driver Microcontroller The UPD1719G is a 4—bit CMOS microcontroller with prescaler that can input up to 150 MHz, PLL synthesizer, and 1/2 duty, 1/2

H7057

Abstract: TI241 00003H d70f3008 p103 t020 D70F30 PD703008
Contextual Info: NEC USER'S MANUAL ¿¿PD703008 /iPD70F3008 /IPD703008Y ¿¿PD70F3008Y e NEC Corporation 1997 b427SSS DDTTQll bSfi Document No. U11969EJ1V0UM00 1st edition Date Published January 1997 N Printed in Japan ft Regional Information S om e information contained in this document may vary from country to country. Before using any N E C

4N60

Abstract: SSH4N60 4N60P ssp4n50 SSH4N55 SSP4N55 SSP4N60 mosfet 4n60
Contextual Info: SAMSUN6 ELECTRONICS INC SSP4N55/4N6Ó SSH4N55/4N 60 b7E T> • 7*lbmH2 OOl^BHI OTO ■ SMGK N-CHANNEL POWER MOSFETS FEATURES • « • • • • • TO-220 Low er R ds ON Im proved in d u c tive ru g g ed n es s F a st sw itch ing tim e s R u g g ed polysilicon g a te cell stru ctu re