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    irf9610 samsung

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF b4142 0Q122bb IRF9610/9611 IRF9610 IRF9611 IRF9612 IRF9613 irf9610 samsung